indium arsenide has been researched along with Sensitivity and Specificity in 9 studies
| Timeframe | Studies, this research(%) | All Research% |
|---|---|---|
| pre-1990 | 0 (0.00) | 18.7374 |
| 1990's | 0 (0.00) | 18.2507 |
| 2000's | 8 (88.89) | 29.6817 |
| 2010's | 1 (11.11) | 24.3611 |
| 2020's | 0 (0.00) | 2.80 |
| Authors | Studies |
|---|---|
| Bordas, F; Dupuy, E; Gendry, M; Rahmani, A; Regreny, P; Seassal, C; Steel, MJ; Viktorovitch, P | 1 |
| Adachi, S; Inoue, S; Namekata, N | 1 |
| Arakawa, Y; Guimard, D; Iwamoto, S; Nomura, M; Tanabe, K | 1 |
| Chiragh, FL; Lester, LF; Li, Y; Lin, CY; Xin, YC | 1 |
| Li, F; Mi, Z | 1 |
| Brongersma, SH; Crego-Calama, M; Offermans, P | 1 |
| Allen, JE; Lauhon, LJ; May, SJ; Perea, DE; Seidman, DN; Wessels, BW | 1 |
| Hessman, D; Landin, L; Persson, AI; Pettersson, H; Samuelson, L; Trägårdh, J | 1 |
| Ferrere, S; Frank, AJ; Norman, AG; Nozik, AJ; Yu, P; Zhu, K | 1 |
9 other study(ies) available for indium arsenide and Sensitivity and Specificity
| Article | Year |
|---|---|
Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 microm using cavity-confined slow light.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Miniaturization; Phosphines; Photons; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Temperature | 2009 |
1.5 GHz single-photon detection at telecommunication wavelengths using sinusoidally gated InGaAs/InP avalanche photodiode.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Microwaves; Phosphines; Photometry; Photons; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Telecommunications | 2009 |
Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Silicon; Temperature | 2009 |
Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Phosphines; Refractometry; Reproducibility of Results; Sensitivity and Specificity | 2009 |
Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Miniaturization; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity | 2009 |
Gas detection with vertical InAs nanowire arrays.
Topics: Arsenicals; Gases; Indium; Nanotechnology; Nanowires; Nitrogen Dioxide; Sensitivity and Specificity | 2010 |
Three-dimensional nanoscale composition mapping of semiconductor nanowires.
Topics: Arsenicals; Catalysis; Gold; Indium; Microelectrodes; Nanotechnology; Nanotubes; Particle Size; Semiconductors; Sensitivity and Specificity; Surface Properties; Tomography | 2006 |
Infrared photodetectors in heterostructure nanowires.
Topics: Arsenicals; Gold; Indium; Light; Nanotubes; Particle Size; Phosphorus; Photochemistry; Quantum Dots; Sensitivity and Specificity; Silicon Dioxide; Spectrophotometry, Infrared; Surface Properties | 2006 |
Nanocrystalline TiO2 solar cells sensitized with InAs quantum dots.
Topics: Arsenicals; Crystallization; Indium; Nanostructures; Particle Size; Photochemistry; Quantum Dots; Semiconductors; Sensitivity and Specificity; Surface Properties; Titanium | 2006 |