Compounds > gallium nitride

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gallium nitride and Sensitivity and Specificity

gallium nitride has been researched along with Sensitivity and Specificity in 16 studies

Research

Studies (16)

Timeframe	Studies, this research(%)	All Research%
pre-1990	0 (0.00)	18.7374
1990's	0 (0.00)	18.2507
2000's	14 (87.50)	29.6817
2010's	2 (12.50)	24.3611
2020's	0 (0.00)	2.80

Authors

Authors	Studies
Alvi, Nu; Gómez, VJ; Kumar, P; Nötzel, R; Soto Rodriguez, PE; Willander, M; Zaman, S	1
Chao, CL; Chao, S; Huang, CY; Ku, HM; Liao, WT; Tsay, JD	1
Chang, JY; Lee, PS; Lee, YC; Wu, ML; Yang, SP	1
Bhattacharyya, A; Li, Y; Moustakas, TD; Paiella, R; Thomidis, C	1
Benisty, H; David, A; Weisbuch, C	1
Guina, M; Härkönen, A; Korpijärvi, VM; Okhotnikov, OG; Rautiainen, J; Tuomisto, P	1
Dawson, MD; Elfström, D; Gu, E; Guilhabert, B; Jin, SR; Kuehne, AJ; Mackintosh, AR; Massoubre, D; Pethrick, RA; Zhang, HX	1
Cheng, BS; Liu, MC; Lu, TC	1
Kikuchi, A; Kishino, K; Kouno, T; Yamano, K	1
Chen, KH; Chen, LC; Ganguly, A; Lai, YT	1
Iwanaga, T; Kojima, H; Mori, H; Moriwaki, S; Seno, K; Shoji, Y; Suzuki, S; Takigawa, M; Tokura, Y; Yagi, S	1
Choi, HJ; Johnson, JC; Knutsen, KP; Saykally, RJ; Schaller, RD; Yang, P	1
An, L; Li, J; Liu, J; Lu, C	1
Evoy, S; Fischer, JE; Jaroenapibal, P; Luzzi, DE; Nam, CY; Tham, D	1
Chen, TC; Poochinda, K; Stoebe, TG	1
Jiang, F; Li, J; Yang, Y; Zhang, J; Zhang, L	1

Other Studies

16 other study(ies) available for gallium nitride and Sensitivity and Specificity

Article	Year
An InN/InGaN quantum dot electrochemical biosensor for clinical diagnosis. Sensors (Basel, Switzerland), 2013, Oct-15, Volume: 13, Issue:10 Topics: Biosensing Techniques; Cholesterol; Conductometry; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity	2013
Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride. Optics express, 2009, Mar-30, Volume: 17, Issue:7 Topics: Computer-Aided Design; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Hot Temperature; Lenses; Lighting; Materials Testing; Reproducibility of Results; Semiconductors; Sensitivity and Specificity	2009
Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays. Optics express, 2009, Apr-13, Volume: 17, Issue:8 Topics: Anisotropy; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Lenses; Lighting; Miniaturization; Models, Theoretical; Reproducibility of Results; Semiconductors; Sensitivity and Specificity	2009
Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides. Optics express, 2007, Dec-24, Volume: 15, Issue:26 Topics: Aluminum Compounds; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Lasers, Semiconductor; Refractometry; Reproducibility of Results; Sensitivity and Specificity; Signal Processing, Computer-Assisted	2007
Spontaneous emission in GaN/InGaN photonic crystal nanopillars. Optics express, 2007, Dec-24, Volume: 15, Issue:26 Topics: Computer Simulation; Computer-Aided Design; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Models, Chemical; Nanotechnology; Nanotubes; Reproducibility of Results; Sensitivity and Specificity	2007
2.7 W tunable orange-red GaInNAs semiconductor disk laser. Optics express, 2007, Dec-24, Volume: 15, Issue:26 Topics: Color; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Reproducibility of Results; Sensitivity and Specificity	2007
Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micro-pixelated light-emitting diodes. Optics express, 2008, Nov-10, Volume: 16, Issue:23 Topics: Computer-Aided Design; Crystallization; Epoxy Compounds; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Nanostructures; Nanotechnology; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Signal Processing, Computer-Assisted	2008
Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers. Optics express, 2009, Oct-26, Volume: 17, Issue:22 Topics: Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Lasers, Semiconductor; Reproducibility of Results; Sensitivity and Specificity; Temperature	2009
Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission. Optics express, 2009, Oct-26, Volume: 17, Issue:22 Topics: Color; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Lighting; Nanostructures; Nanotechnology; Reproducibility of Results; Sensitivity and Specificity	2009
Direct voltammetric sensing of L-cysteine at pristine GaN nanowires electrode. Biosensors & bioelectronics, 2010, Dec-15, Volume: 26, Issue:4 Topics: Biosensing Techniques; Cysteine; Electrochemical Techniques; Electrodes; Gallium; Hydrogen-Ion Concentration; Microscopy, Electron, Scanning; Nanowires; Oxidation-Reduction; Sensitivity and Specificity	2010
UV dose measurements of photosensitive dermatosis patients by polycrystalline GaN-based portable self-data-acquisition UV monitors. Photochemistry and photobiology, 2002, Volume: 76, Issue:6 Topics: Child; Child, Preschool; Environmental Monitoring; Female; Gallium; Humans; Infant; Male; Quality of Life; Radiation Dosage; Sensitivity and Specificity; Ultraviolet Rays; Xeroderma Pigmentosum	2002
Single gallium nitride nanowire lasers. Nature materials, 2002, Volume: 1, Issue:2 Topics: Crystallization; Electrons; Equipment Design; Equipment Failure Analysis; Gallium; Lasers; Materials Testing; Microchemistry; Miniaturization; Nanotechnology; Nitrogen; Photochemistry; Semiconductors; Sensitivity and Specificity; Ultraviolet Rays	2002
Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties. Nano letters, 2006, Volume: 6, Issue:2 Topics: Gallium; Nanotubes; Oxidation-Reduction; Particle Size; Powder Diffraction; Sensitivity and Specificity; Surface Properties	2006
Diameter-dependent electromechanical properties of GaN nanowires. Nano letters, 2006, Volume: 6, Issue:2 Topics: Gallium; Microscopy, Electron, Transmission; Nanotechnology; Nanotubes; Particle Size; Sensitivity and Specificity; Surface Properties	2006
Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors. Radiation protection dosimetry, 2006, Volume: 119, Issue:1-4 Topics: Aluminum Oxide; Dose-Response Relationship, Radiation; Electrochemistry; Equipment Design; Equipment Failure Analysis; Gallium; Light; Materials Testing; Photochemistry; Radiation Dosage; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Systems Integration; Thermoluminescent Dosimetry; Transducers	2006
Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires. The journal of physical chemistry. B, 2005, Jan-13, Volume: 109, Issue:1 Topics: Gallium; Microscopy, Electron, Transmission; Nanowires; Optics and Photonics; Particle Size; Semiconductors; Sensitivity and Specificity; Silicon Dioxide; Surface Properties	2005