zinc oxide has been researched along with hafnia in 1 studies
| Timeframe | Studies, this research(%) | All Research% |
|---|---|---|
| pre-1990 | 0 (0.00) | 18.7374 |
| 1990's | 0 (0.00) | 18.2507 |
| 2000's | 0 (0.00) | 29.6817 |
| 2010's | 0 (0.00) | 24.3611 |
| 2020's | 1 (100.00) | 2.80 |
| Authors | Studies |
|---|---|
| Beom, K; Han, J; Kim, HM; Yoon, TS | 1 |
1 other study(ies) available for zinc oxide and hafnia
| Article | Year |
|---|---|
Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application.
Topics: Hafnium; Indium; Oxides; Synapses; Transistors, Electronic; Zinc; Zinc Oxide | 2021 |