tin has been researched along with hafnia in 1 studies
| Timeframe | Studies, this research(%) | All Research% |
|---|---|---|
| pre-1990 | 0 (0.00) | 18.7374 |
| 1990's | 0 (0.00) | 18.2507 |
| 2000's | 0 (0.00) | 29.6817 |
| 2010's | 1 (100.00) | 24.3611 |
| 2020's | 0 (0.00) | 2.80 |
| Authors | Studies |
|---|---|
| Ahmed, S; Ali, M; Khan, ZN | 1 |
1 other study(ies) available for tin and hafnia
| Article | Year |
|---|---|
Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.
Topics: Electric Capacitance; Hafnium; Oxides; Semiconductors; Temperature; Tin | 2016 |