tellurium and gallium-arsenide

Topics: Animals; Bismuth; Cadmium Compounds; Contrast Media; Iodine; Mice; Quantum Dots; Tellurium; X-Ray Microtomography

Despite the benefits of mammography investigations, some studies have shown that X-ray exposure from the mammography screening itself can statistically cause breast cancer in a small fraction of women. Therefore, a dose reduction in mammography is desirable. At the same time, there is a demand for a higher spatial resolution in mammographic imaging. The most promising way to achieve these goals is the use of advanced photon-processing semiconductor X-ray detectors with optimum sensor materials. This study addresses the investigation of the optimum semiconductor sensor material for mammography in combination with the photon-processing detector Medipix3RX. The influence of K-shell fluorescence from the sensor material on the achievable contrast-to-noise ratio is investigated, as well as the attenuation efficiency. The three different sensor materials, CdTe, GaAs, and Si are studied, showing advances of CdTe-sensors for mammography. Furthermore, a comparison of the contrast-to-noise ratio between a clinical Se-detector and Medipix3RX detectors with Si- and CdTe-sensors is shown using a self-produced mammography phantom that is based on real human tissue.

Topics: Arsenicals; Cadmium Compounds; Female; Gallium; Humans; Mammography; Quantum Dots; Tellurium

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

Topics: Arsenicals; Cadmium Compounds; Gallium; Humans; Photons; Principal Component Analysis; Spectrometry, X-Ray Emission; Tellurium; Tomography, X-Ray Computed

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

Topics: Antimony; Arsenicals; Azo Compounds; Bismuth; Gallium; Hot Temperature; Microscopy, Atomic Force; Nanostructures; Nanotechnology; Organic Chemicals; Photochemistry; Tellurium; Temperature

We have built a relatively simple, highly efficient, terahertz (THz) emission and detection system centred around a 15 fs Ti:sapphire laser. In the system, 200 mW of laser power is focused on a 120 microm diameter spot between two silverpaint electrodes on the surface of a semi-insulating GaAs crystal, kept at a temperature near 300 K, biased with a 50 kHz, +/- 400 V square wave. Using rapid delay scanning and lock-in detection at 50 kHz, we obtain probe laser quantum-noise limited signals using a standard electro-optic detection scheme with a 1 mm thick (110) oriented ZnTe crystal. The maximum THz-induced differential signal that we observe is deltaP/P = 7 x 10(-3), corresponding to a THz peak amplitude of 95 V cm(-1). The THz average power was measured to be about 40 microW, to our knowledge the highest power reported so far generated with Ti:sapphire oscillators as a pump source. The system uses off-the-shelf electronics and requires no microfabrication techniques.

Topics: Arsenicals; Crystallization; Crystallography; Electromagnetic Phenomena; Equipment Design; Equipment Failure Analysis; Gallium; Lasers; Materials Testing; Microwaves; Optics and Photonics; Photic Stimulation; Quality Control; Semiconductors; Sensitivity and Specificity; Spectrum Analysis; Stochastic Processes; Tellurium; Transducers; Zinc Compounds