silicon and erbium-oxide

silicon has been researched along with erbium-oxide* in 1 studies

Other Studies

1 other study(ies) available for silicon and erbium-oxide

Article	Year
Erbium-doped spiral amplifiers with 20 dB of net gain on silicon. Optics express, 2014, Oct-20, Volume: 22, Issue:21 Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied. Topics: Amplifiers, Electronic; Computer-Aided Design; Equipment Design; Erbium; Lasers, Solid-State; Oxides; Silicon	2014

Article

Year

Erbium-doped spiral amplifiers with 20 dB of net gain on silicon.

Optics express, 2014, Oct-20, Volume: 22, Issue:21

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

Topics: Amplifiers, Electronic; Computer-Aided Design; Equipment Design; Erbium; Lasers, Solid-State; Oxides; Silicon

2014