silicon has been researched along with aluminum-nitride* in 5 studies
5 other study(ies) available for silicon and aluminum-nitride
Article | Year |
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Application of High-Throughput Seebeck Microprobe Measurements on Thermoelectric Half-Heusler Thin Film Combinatorial Material Libraries.
In view of the variety and complexity of thermoelectric (TE) material systems, combinatorial approaches to materials development come to the fore for identifying new promising compounds. The success of this approach is related to the availability and reliability of high-throughput characterization methods for identifying interrelations between materials structures and properties within the composition spread libraries. A meaningful characterization starts with determination of the Seebeck coefficient as a major feature of TE materials. Its measurement, and hence the accuracy and detectability of promising material compositions, may be strongly affected by thermal and electrical measurement conditions. This work illustrates the interrelated effects of the substrate material, the layer thickness, and spatial property distributions of thin film composition spread libraries, which are studied experimentally by local thermopower scans by means of the Potential and Seebeck Microprobe (PSM). The study is complemented by numerical evaluation. Material libraries of the half-Heusler compound system Ti-Ni-Sn were deposited on selected substrates (Si, AlN, Al Topics: Aluminum Compounds; Aluminum Oxide; Combinatorial Chemistry Techniques; Electric Conductivity; Materials Testing; Nickel; Silicon; Thermal Conductivity; Tin | 2018 |
NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.
Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model. Topics: Aluminum; Aluminum Compounds; Electrons; Magnetic Resonance Spectroscopy; Models, Molecular; Molecular Conformation; Nanotubes; Nitrogen; Quantum Theory; Semiconductors; Silicon; Static Electricity | 2012 |
Determination of ZnO temperature coefficients using thin film bulk acoustic wave resonators.
Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in use today include size reduction and the possibility of on-chip integration. As the technology matures, the necessity to more fully characterize the performance of the devices and to develop more accurate models describing their behavior is apparent. In this investigation, the effects that temperature variations have on 1.8-2.0 GHz zinc oxide (ZnO)-based solidly mounted BAW resonators (SMRs) are studied. The average temperature coefficients of the series and parallel resonant frequencies of the fabricated devices are found to be -31.5 ppm/degrees C and -35.3 ppm/degrees C, respectively. The slight decrease in separation between the two resonant frequencies with temperature implies there is slightly less effective coupling with increased temperature. No definite trend is found describing the behavior of the quality factor (Q) of the resonator with temperature variations. With little temperature coefficient data for thin film ZnO available in the literature, the importance of an accurate model is evident. The resonator device performance is simulated using Ballato's electronic circuit model for acoustic devices on a SPICE-based platform. By virtue of the comparison between the predicted and measured device response, various material parameters are extracted. Topics: Acoustics; Aluminum; Aluminum Compounds; Electric Impedance; Electrochemistry; Equipment Design; Materials Testing; Microwaves; Models, Chemical; Models, Theoretical; Silicon; Silicon Dioxide; Temperature; Zinc Oxide | 2002 |
Experimental kerma coefficients and dose distributions of C, N, O, Mg, Al, Si, Fe, Zr, A-150 plastic, Al203, AlN, SiO2 and ZrO2 for neutron energies up to 66 MeV.
Low-pressure proportional counters (LPPCs) with walls made from the elements C, Mg, Al, Si, Fe and Zr and from the chemical compounds A-150 plastic, AlN, Al2O3, SiO2 and ZrO2 were used to measure neutron fluence-to-kerma conversion coefficients at energies up to 66 MeV. The LPPCs served to measure the absorbed dose deposited in the gas of a cavity surrounded by the counter walls that could be converted to the absorbed dose to the wall on the basis of the Bragg-Gray cavity theory. Numerically the absorbed doses to the walls were almost equal to the corresponding kerma values of the wall materials. The neutron fluence was determined by various experimental methods based on the reference cross sections of the 1H(n, p) scattering and/or the 238U(n, f) reactions. The measurements were performed in monoenergetic neutron fields of energies of 5 MeV, 8 MeV, 15 MeV and 17 MeV and in polyenergetic neutron beams with prominent peaks of energies of 34 MeV, 44 MeV and 66 MeV. For the measurements in the polyenergetic neutron beams, significant corrections for the contributions of the non peak energy neutrons were applied. The fluence-to kerma conversion coefficients of N and O were determined using the difference technique applied with matched pairs of LPPCs made from a chemical compound and a pure element. This paper reports experimental fluence-to-kerma conversion coefficient values of eight elements and four compounds measured for seven neutron energies, and presents a comparison with data from previous measurements and theoretical predictions. The distributions of the absorbed dose as a function of the lineal energy were measured for monoenergetic neutrons or, for polyenergetic neutron fields, deduced by applying iterative unfolding procedures in order to subtract the contributions from non-peak energy neutrons. The dose distributions provide insight into the neutron interaction processes. Topics: Aluminum; Aluminum Compounds; Aluminum Oxide; Carbon; Iron; Magnesium; Models, Theoretical; Neutrons; Nitrogen; Oxygen; Plastics; Radiotherapy Planning, Computer-Assisted; Silicon; Silicon Dioxide; Zirconium | 2000 |
High-resolution electron microscopy of ceramic interfaces.
Three observations described here were chosen not only to represent our recent interface studies in ceramics, but also to demonstrate how different the present status of interface research is with respect to the level of high-resolution electron microscopy. Certain common features may be found among the problems of ceramic interface studies. Importance of basal plane grain boundary, for example, is one of the characteristics of this type of heterogeneous compound. The crystalline heterogeneity has been ignored largely in the grain boundary structure study since it has been developed primarily for cubic metals. The new area of basic grain boundary interface structure study is opened now that description of this type of interface has become engineeringly important. Topics: Aluminum; Aluminum Compounds; Carbon; Carbon Compounds, Inorganic; Ceramics; Chemical Phenomena; Chemistry; Microscopy, Electron; Molecular Structure; Silicon; Silicon Compounds; Temperature; Ytterbium | 1989 |