Compounds > indium phosphide

Page last updated: 2024-08-23

indium phosphide and gallium arsenide

indium phosphide has been researched along with gallium arsenide in 14 studies

Research

Studies (14)

Timeframe	Studies, this research(%)	All Research%
pre-1990	0 (0.00)	18.7374
1990's	0 (0.00)	18.2507
2000's	5 (35.71)	29.6817
2010's	9 (64.29)	24.3611
2020's	0 (0.00)	2.80

Authors

Authors	Studies
Gerthsen, D; Kruse, P; Rosenauer, A	1
Aizawa, M; Buriak, JM	1
Aizawa, M; Buriak, JM; Hormozi Nezhad, MR; Porter, LA; Ribbe, AE	1
Bussadori, SK; Fernandes, KP; Ferrari, RA; Ferreira, MP; Gonzalez, DA; Gravalos, ED; Martins, MD	1
Coldren, LA; Kim, B; Krishnamachari, U; Nicholes, SC; Norberg, EJ; Parker, JS	1
Amemiya, T; Arai, S; Atsumi, Y; Ito, H; Kang, J; Koguchi, T; Nishiyama, N; Okumura, T; Osabe, R; Shindo, T; Takahashi, D	1
Liu, J; Liu, W; Qin, L; Tang, Q; Wu, RH; Yuan, X; Zhang, D; Zhang, H; Zhang, Y; Zhao, Y	1
Chiu, YJ; Wu, JP; Wu, TH	1
Huang, Y; Lee, J; Liu, Z; Meitl, M; Rogers, JA; Ryu, JH; Wu, J; Zhang, YW	1
Coldren, LA; Norberg, E; Parker, JS; Sivananthan, A	1
Liu, CP; Liu, H; Natrella, M; Renaud, CC; Rouvalis, E; Seeds, AJ	1
Docherty, CJ; Gao, Q; Herz, LM; Jagadish, C; Johnston, MB; Joyce, HJ; Lloyd-Hughes, J; Tan, HH	1
Campbell, J; Itzler, MA; Jiang, X; Lu, Z; Sun, W; Zhou, Q	1

Other Studies

14 other study(ies) available for indium phosphide and gallium arsenide

Article	Year
Determination of the mean inner potential in III-V semiconductors by electron holography. Ultramicroscopy, 2003, Volume: 96, Issue:1 Topics: Algorithms; Arsenicals; Gallium; Holography; Indium; Microscopy, Electron; Neutron Diffraction; Phosphines; Semiconductors	2003
Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces. Journal of the American Chemical Society, 2005, Jun-29, Volume: 127, Issue:25 Topics: Arsenicals; Gallium; Germanium; Indium; Molecular Structure; Nanostructures; Phosphines; Polymers; Semiconductors; Silicon; Surface Properties	2005
Cobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide and vanadium pentoxide. IARC monographs on the evaluation of carcinogenic risks to humans, 2006, Volume: 86 Topics: Animals; Arsenicals; Carcinogens; Cobalt; Gallium; Guinea Pigs; Humans; Indium; Metals; Mice; Phosphines; Rabbits; Rats; Vanadium Compounds	2006
Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement. Small (Weinheim an der Bergstrasse, Germany), 2005, Volume: 1, Issue:11 Topics: Arsenicals; Gallium; Gold; Indium; Ions; Metal Nanoparticles; Metals; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanostructures; Nanotechnology; Nitrogen; Phosphines; Semiconductors; Silicon; Surface Properties; Surface-Active Agents	2005
Effect of low-energy gallium-aluminum-arsenide and aluminium gallium indium phosphide laser irradiation on the viability of C2C12 myoblasts in a muscle injury model. Photomedicine and laser surgery, 2009, Volume: 27, Issue:6 Topics: Aluminum Compounds; Animals; Arsenicals; Cell Line; Cell Proliferation; Cell Survival; Cells, Cultured; Gallium; Indium; Lasers, Semiconductor; Low-Level Light Therapy; Mice; Muscle, Skeletal; Myoblasts; Phosphines	2009
Etched beam splitters in InP/InGaAsP. Optics express, 2011, Jan-17, Volume: 19, Issue:2 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Interferometry; Lenses; Phosphines; Refractometry	2011
GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating. Optics express, 2011, Jan-31, Volume: 19, Issue:3 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Feedback; Gallium; Indium; Lasers; Membranes, Artificial; Phosphines; Refractometry; Silicon	2011
InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination. Optics express, 2011, Apr-25, Volume: 19, Issue:9 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Phosphines; Photometry; Semiconductors	2011
Field-driven all-optical wavelength converter using novel InGaAsP/InAlGaAs quantum wells. Optics express, 2011, Dec-19, Volume: 19, Issue:27 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Optical Devices; Phosphines; Quantum Dots; Signal Processing, Computer-Assisted; Telecommunications	2011
Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics. Small (Weinheim an der Bergstrasse, Germany), 2012, Jun-25, Volume: 8, Issue:12 Topics: Arsenicals; Dimethylpolysiloxanes; Electrochemistry; Electronics; Equipment Design; Finite Element Analysis; Gallium; Indium; Microscopy, Electron, Scanning; Optics and Photonics; Phosphines; Photochemistry; Prostheses and Implants; Semiconductors; Surface Properties; Tensile Strength	2012
Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation. Optics express, 2012, Aug-27, Volume: 20, Issue:18 Topics: Arsenicals; Gallium; Indium; Ions; Materials Testing; Phosphines	2012
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy. Optics express, 2012, Aug-13, Volume: 20, Issue:17 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Heavy Ions; Indium; Materials Testing; Phosphines; Photometry; Semiconductors	2012
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy. Nanotechnology, 2013, May-31, Volume: 24, Issue:21 Topics: Arsenicals; Electric Conductivity; Gallium; Indium; Materials Testing; Nanowires; Particle Size; Phosphines; Radiation Dosage; Semiconductors; Terahertz Radiation; Terahertz Spectroscopy	2013
Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes. Optics express, 2013, Jul-15, Volume: 21, Issue:14 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Phosphines; Photometry; Refractometry; Semiconductors	2013