Page last updated: 2024-08-23

indium phosphide and arsenic

indium phosphide has been researched along with arsenic in 41 studies

Research

Studies (41)

Timeframe	Studies, this research(%)	All Research%
pre-1990	0 (0.00)	18.7374
1990's	1 (2.44)	18.2507
2000's	19 (46.34)	29.6817
2010's	21 (51.22)	24.3611
2020's	0 (0.00)	2.80

Authors

Authors	Studies
Hirata, M; Hisanaga, A; Inoue, N; Ishinishi, N; Makita, Y; Omura, M; Tanaka, A	1
Gerthsen, D; Kruse, P; Rosenauer, A	1
Aizawa, M; Buriak, JM	1
Bawendi, MG; Frangioni, JV; Kim, SW; Ohnishi, S; Tracy, JB; Zimmer, JP	1
Lipsanen, H; Mattila, M; Riikonen, J; Sopanen, M; Sormunen, J; Tiilikainen, J	1
Bakir, BB; Levenson, JA; Monnier, P; Raineri, F; Raj, R; Seassal, C; Yacomotti, AM	1
Aizawa, M; Buriak, JM; Hormozi Nezhad, MR; Porter, LA; Ribbe, AE	1
Cirlin, GE; Harmand, JC; Patriarche, G; Perinetti, U; Tchernycheva, M; Travers, L; Zwiller, V	1
Eymery, J; Favre-Nicolin, V; Fröberg, L; Mårtensson, T; Niquet, YM; Rieutord, F; Robach, O; Samuelson, L	1
Jiang, X; Li, Y; Lieber, CM; Nam, S; Qian, F; Xiong, Q	1
Calligaro, M; Capua, A; Eisenstein, G; Forchel, A; Krakowski, M; Mikhelashvili, V; Parillaud, O; Reithmaier, JP; Somers, A	1
Bordas, F; Dupuy, E; Gendry, M; Rahmani, A; Regreny, P; Seassal, C; Steel, MJ; Viktorovitch, P	1
Adachi, S; Inoue, S; Namekata, N	1
Capua, A; Eisenstein, G; Forchel, A; Mikhelashvili, V; O'Duill, S; Reithmaier, JP; Somers, A	1
Barrios, PJ; Grant, P; Liu, JR; Lu, ZG; Pakulski, G; Poitras, D; Poole, PJ; Raymond, S; Roy-Guay, D	1
Alén, B; Dotor, ML; Fuster, D; González, L; González, Y; Martínez, LJ; Postigo, PA; Prieto, I	1
Bussadori, SK; Fernandes, KP; Ferrari, RA; Ferreira, MP; Gonzalez, DA; Gravalos, ED; Martins, MD	1
Chiragh, FL; Lester, LF; Li, Y; Lin, CY; Xin, YC	1
Kakitsuka, T; Kitayama, K; Matsuo, S; Tomofuji, S	1
Chen, X; Jian, Y; Wu, E; Wu, G; Zeng, H	1
Coldren, LA; Kim, B; Krishnamachari, U; Nicholes, SC; Norberg, EJ; Parker, JS	1
Amemiya, T; Arai, S; Atsumi, Y; Ito, H; Kang, J; Koguchi, T; Nishiyama, N; Okumura, T; Osabe, R; Shindo, T; Takahashi, D	1
Nakamura, A; Tabuchi, M; Takeda, Y	1
Beltram, F; Ercolani, D; Pescaglini, A; Roddaro, S; Sorba, L	1
Liu, J; Liu, W; Qin, L; Tang, Q; Wu, RH; Yuan, X; Zhang, D; Zhang, H; Zhang, Y; Zhao, Y	1
Chiu, YJ; Wu, JP; Wu, TH	1
Capua, A; Eisenstein, G; Karni, O; Reithmaier, JP; Saal, A; Yvind, K	1
Capua, A; Eisenstein, G; Karni, O; Reithmaier, JP; Yvind, K	1
Alén, B; Canet-Ferrer, J; Dotor, ML; Fuster, D; González, L; González, Y; Martínez, LJ; Martínez-Pastor, JP; Muñoz-Matutano, G; Postigo, PA; Prieto, I	1
Bente, EA; Du, L; Heck, MJ; Nötzel, R; Smit, MK; Tahvili, MS	1
Huang, Y; Lee, J; Liu, Z; Meitl, M; Rogers, JA; Ryu, JH; Wu, J; Zhang, YW	1
Gotoh, H; Sogawa, T; Tateno, K; Zhang, G	1
Bahgat Shehata, A; Bargigia, I; Bassi, A; Cubeddu, R; Dalla Mora, A; Della Frera, A; Farina, A; Pifferi, A; Taroni, P; Tosi, A; Zappa, F	1
Beltram, F; Ercolani, D; Pitanti, A; Roddaro, S; Romeo, L; Sorba, L	1
Chen, ZB; Du, DB; Jin, G; Liang, XL; Liu, JH; Ma, J; Pan, JW; Wang, Q; Zhang, J	1
Coldren, LA; Norberg, E; Parker, JS; Sivananthan, A	1
Liu, CP; Liu, H; Natrella, M; Renaud, CC; Rouvalis, E; Seeds, AJ	1
Lee, JS; Liu, W; Talapin, DV	1
Docherty, CJ; Gao, Q; Herz, LM; Jagadish, C; Johnston, MB; Joyce, HJ; Lloyd-Hughes, J; Tan, HH	1
Campbell, J; Itzler, MA; Jiang, X; Lu, Z; Sun, W; Zhou, Q	1

Other Studies

41 other study(ies) available for indium phosphide and arsenic

Article	Year
Chronic toxicity of indium arsenide and indium phosphide to the lungs of hamsters. Fukuoka igaku zasshi = Hukuoka acta medica, 1996, Volume: 87, Issue:5 Topics: Animals; Arsenic Poisoning; Arsenicals; Body Weight; Cricetinae; Indium; Lung; Male; Phosphines	1996
Determination of the mean inner potential in III-V semiconductors by electron holography. Ultramicroscopy, 2003, Volume: 96, Issue:1 Topics: Algorithms; Arsenicals; Gallium; Holography; Indium; Microscopy, Electron; Neutron Diffraction; Phosphines; Semiconductors	2003
Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces. Journal of the American Chemical Society, 2005, Jun-29, Volume: 127, Issue:25 Topics: Arsenicals; Gallium; Germanium; Indium; Molecular Structure; Nanostructures; Phosphines; Polymers; Semiconductors; Silicon; Surface Properties	2005
Engineering InAs(x)P(1-x)/InP/ZnSe III-V alloyed core/shell quantum dots for the near-infrared. Journal of the American Chemical Society, 2005, Aug-03, Volume: 127, Issue:30 Topics: Alloys; Animals; Arsenicals; Indium; Phosphines; Quantum Dots; Rats; Selenium Compounds; Sentinel Lymph Node Biopsy; Spectroscopy, Near-Infrared; X-Ray Diffraction; Zinc Compounds	2005
Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping. Nano letters, 2005, Volume: 5, Issue:8 Topics: Arsenicals; Crystallization; Indium; Materials Testing; Molecular Conformation; Nanostructures; Phase Transition; Phosphines; Quantum Dots	2005
Cobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide and vanadium pentoxide. IARC monographs on the evaluation of carcinogenic risks to humans, 2006, Volume: 86 Topics: Animals; Arsenicals; Carcinogens; Cobalt; Gallium; Guinea Pigs; Humans; Indium; Metals; Mice; Phosphines; Rabbits; Rats; Vanadium Compounds	2006
Fast thermo-optical excitability in a two-dimensional photonic crystal. Physical review letters, 2006, Oct-06, Volume: 97, Issue:14 Topics: Arsenicals; Crystallization; Electromagnetic Fields; Graphite; Indium; Models, Chemical; Phosphines; Photons; Semiconductors; Silicon Dioxide; Thermodynamics	2006
Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement. Small (Weinheim an der Bergstrasse, Germany), 2005, Volume: 1, Issue:11 Topics: Arsenicals; Gallium; Gold; Indium; Ions; Metal Nanoparticles; Metals; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanostructures; Nanotechnology; Nitrogen; Phosphines; Semiconductors; Silicon; Surface Properties; Surface-Active Agents	2005
Growth and characterization of InP nanowires with InAsP insertions. Nano letters, 2007, Volume: 7, Issue:6 Topics: Arsenicals; Crystallization; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Phosphines; Surface Properties	2007
Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques. Nano letters, 2007, Volume: 7, Issue:9 Topics: Arsenicals; Computer Simulation; Crystallization; Elasticity; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Phosphines; Stress, Mechanical; Surface Properties; X-Ray Diffraction	2007
InAs/InP radial nanowire heterostructures as high electron mobility devices. Nano letters, 2007, Volume: 7, Issue:10 Topics: Arsenicals; Computer Simulation; Crystallization; Electric Wiring; Electron Transport; Indium; Models, Chemical; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Phosphines	2007
Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm. Optics express, 2008, Feb-04, Volume: 16, Issue:3 Topics: Amplifiers, Electronic; Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Optics and Photonics; Phosphines; Quantum Theory	2008
Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 microm using cavity-confined slow light. Optics express, 2009, Mar-30, Volume: 17, Issue:7 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Miniaturization; Phosphines; Photons; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Temperature	2009
1.5 GHz single-photon detection at telecommunication wavelengths using sinusoidally gated InGaAs/InP avalanche photodiode. Optics express, 2009, Apr-13, Volume: 17, Issue:8 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Microwaves; Phosphines; Photometry; Photons; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Telecommunications	2009
Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier. Optics express, 2008, Nov-10, Volume: 16, Issue:23 Topics: Amplifiers, Electronic; Arsenicals; Computer Communication Networks; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Microwaves; Optical Devices; Phosphines; Semiconductors; Signal Processing, Computer-Assisted	2008
An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses. Optics express, 2009, Aug-03, Volume: 17, Issue:16 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Light; Microwaves; Models, Theoretical; Phosphines; Quantum Dots; Scattering, Radiation; Semiconductors	2009
Room temperature continuous wave operation in a photonic crystal microcavity laser with a single layer of InAs/InP self-assembled quantum wires. Optics express, 2009, Aug-17, Volume: 17, Issue:17 Topics: Arsenicals; Crystallization; Equipment Design; Indium; Lasers; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanostructures; Optics and Photonics; Phosphines; Photons; Quantum Dots; Quantum Theory; Surface Properties; Temperature	2009
Effect of low-energy gallium-aluminum-arsenide and aluminium gallium indium phosphide laser irradiation on the viability of C2C12 myoblasts in a muscle injury model. Photomedicine and laser surgery, 2009, Volume: 27, Issue:6 Topics: Aluminum Compounds; Animals; Arsenicals; Cell Line; Cell Proliferation; Cell Survival; Cells, Cultured; Gallium; Indium; Lasers, Semiconductor; Low-Level Light Therapy; Mice; Muscle, Skeletal; Myoblasts; Phosphines	2009
Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers. Optics express, 2009, Oct-26, Volume: 17, Issue:22 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Phosphines; Refractometry; Reproducibility of Results; Sensitivity and Specificity	2009
Dynamic switching characteristics of InGaAsP/InP multimode interference optical waveguide switch. Optics express, 2009, Dec-21, Volume: 17, Issue:26 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Optical Devices; Phosphines; Refractometry; Signal Processing, Computer-Assisted	2009
Time-dependent photon number discrimination of InGaAs/InP avalanche photodiode single-photon detector. Applied optics, 2011, Jan-01, Volume: 50, Issue:1 Topics: Arsenicals; Equipment Design; Gallium; Indium; Phosphines; Photometry; Photons; Semiconductors	2011
Etched beam splitters in InP/InGaAsP. Optics express, 2011, Jan-17, Volume: 19, Issue:2 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Interferometry; Lenses; Phosphines; Refractometry	2011
GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating. Optics express, 2011, Jan-31, Volume: 19, Issue:3 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Feedback; Gallium; Indium; Lasers; Membranes, Artificial; Phosphines; Refractometry; Silicon	2011
Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements. Journal of physics. Condensed matter : an Institute of Physics journal, 2010, Dec-01, Volume: 22, Issue:47 Topics: Arsenic; Gallium; Indium; Materials Testing; Microscopy, Scanning Tunneling; Phosphines; X-Ray Diffraction	2010
Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots. Nano letters, 2011, Apr-13, Volume: 11, Issue:4 Topics: Arsenicals; Electromagnetic Fields; Electrons; Indium; Materials Testing; Nanostructures; Particle Size; Phosphines; Quantum Dots	2011
InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination. Optics express, 2011, Apr-25, Volume: 19, Issue:9 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Phosphines; Photometry; Semiconductors	2011
Field-driven all-optical wavelength converter using novel InGaAsP/InAlGaAs quantum wells. Optics express, 2011, Dec-19, Volume: 19, Issue:27 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Optical Devices; Phosphines; Quantum Dots; Signal Processing, Computer-Assisted; Telecommunications	2011
Complex characterization of short-pulse propagation through InAs/InP quantum-dash optical amplifiers: from the quasi-linear to the two-photon-dominated regime. Optics express, 2012, Jan-02, Volume: 20, Issue:1 Topics: Amplifiers, Electronic; Arsenicals; Computer Simulation; Indium; Light; Models, Chemical; Phosphines; Photons; Quantum Dots; Scattering, Radiation	2012
Extreme nonlinearities in InAs/InP nanowire gain media: the two-photon induced laser. Optics express, 2012, Mar-12, Volume: 20, Issue:6 Topics: Amplifiers, Electronic; Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Materials Testing; Nanotubes; Nonlinear Dynamics; Oscillometry; Phosphines; Photons	2012
Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires. Optics express, 2012, Mar-26, Volume: 20, Issue:7 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Miniaturization; Nanoparticles; Phosphines; Surface Plasmon Resonance	2012
Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers. Optics express, 2012, Mar-26, Volume: 20, Issue:7 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Phosphines; Quantum Dots	2012
Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics. Small (Weinheim an der Bergstrasse, Germany), 2012, Jun-25, Volume: 8, Issue:12 Topics: Arsenicals; Dimethylpolysiloxanes; Electrochemistry; Electronics; Equipment Design; Finite Element Analysis; Gallium; Indium; Microscopy, Electron, Scanning; Optics and Photonics; Phosphines; Photochemistry; Prostheses and Implants; Semiconductors; Surface Properties; Tensile Strength	2012
VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Arsenicals; Crystallization; Indium; Materials Testing; Nanotubes; Particle Size; Phosphines; Quantum Dots	2012
Time-resolved diffuse optical spectroscopy up to 1700 nm by means of a time-gated InGaAs/InP single-photon avalanche diode. Applied spectroscopy, 2012, Volume: 66, Issue:8 Topics: Absorption; Alloys; Animals; Arsenicals; Calibration; Carbon; Computer Simulation; Dietary Fats; Emulsions; Fiber Optic Technology; Gallium; Indium; Infrared Rays; Lasers, Solid-State; Models, Theoretical; Monte Carlo Method; Phantoms, Imaging; Phosphines; Phospholipids; Photons; Scattering, Radiation; Semiconductors; Solutions; Soybean Oil; Spectroscopy, Near-Infrared; Swine; Time	2012
Electrostatic spin control in InAs/InP nanowire quantum dots. Nano letters, 2012, Sep-12, Volume: 12, Issue:9 Topics: Arsenicals; Crystallization; Electroplating; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Phosphines; Quantum Dots; Surface Properties	2012
Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating. The Review of scientific instruments, 2012, Volume: 83, Issue:8 Topics: Arsenicals; Gallium; Indium; Optical Devices; Phosphines; Photons; Quantum Theory	2012
Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation. Optics express, 2012, Aug-27, Volume: 20, Issue:18 Topics: Arsenicals; Gallium; Indium; Ions; Materials Testing; Phosphines	2012
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy. Optics express, 2012, Aug-13, Volume: 20, Issue:17 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Heavy Ions; Indium; Materials Testing; Phosphines; Photometry; Semiconductors	2012
III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar photoresponse. Journal of the American Chemical Society, 2013, Jan-30, Volume: 135, Issue:4 Topics: Arsenicals; Chalcogens; Electrons; Indium; Ligands; Nanoparticles; Phosphines; Photochemical Processes	2013
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy. Nanotechnology, 2013, May-31, Volume: 24, Issue:21 Topics: Arsenicals; Electric Conductivity; Gallium; Indium; Materials Testing; Nanowires; Particle Size; Phosphines; Radiation Dosage; Semiconductors; Terahertz Radiation; Terahertz Spectroscopy	2013
Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes. Optics express, 2013, Jul-15, Volume: 21, Issue:14 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Phosphines; Photometry; Refractometry; Semiconductors	2013