Page last updated: 2024-09-03

indium nitride and indium

indium nitride has been researched along with indium in 76 studies

Compound Research Comparison

Studies (indium nitride)	Trials (indium nitride)	Recent Studies (post-2010) (indium nitride)	Studies (indium)	Trials (indium)	Recent Studies (post-2010) (indium)
76	0	50	4,709	44	1,139

Research

Studies (76)

Timeframe	Studies, this research(%)	All Research%
pre-1990	0 (0.00)	18.7374
1990's	0 (0.00)	18.2507
2000's	18 (23.68)	29.6817
2010's	57 (75.00)	24.3611
2020's	1 (1.32)	2.80

Authors

Authors	Studies
Du, WM; Li, WH; Li, ZL; Lü, GW; Tang, YJ; Zhang, GY	1
Calarco, R; Lüth, H; Meijers, RJ; Richter, T; Stoica, T; Sutter, E	1
Deepak, FL; Govindaraj, A; Rao, CN; Sardar, K; Seikh, MM	1
Dou, X; Gao, Y; Liu, D; Liu, L; Luo, S; Song, L; Wang, J; Xiang, Y; Xie, S; Zhang, Z; Zhao, X; Zhou, J; Zhou, W	1
Durbin, SM; Kinsey, RJ; Liu, Z; Ringer, SP	1
Avouris, P; Chen, J; Cheng, G; Reed, MA; Stern, E	1
Chaniotakis, N; Sofikiti, N	1
Collins, D; Hadjipanayi, M; Humphreys, C; Jarjour, A; Kappers, M; Oliver, R; Tahraoui, A; Taylor, R	1
Benisty, H; David, A; Weisbuch, C	1
Guina, M; Härkönen, A; Korpijärvi, VM; Okhotnikov, OG; Rautiainen, J; Tuomisto, P	1
Dawson, MD; Elfström, D; Gu, E; Guilhabert, B; Jin, SR; Kuehne, AJ; Mackintosh, AR; Massoubre, D; Pethrick, RA; Zhang, HX	1
Chattopadhyay, S; Chen, JT; Chen, KH; Chen, LC; Hsu, CM; Hsu, HC; Huang, PJ; Jou, S; Lin, FS; Shih, HC; Wei, PC	1
Arif, RA; Ee, YK; Gilchrist, JF; Kumnorkaew, P; Tansu, N; Tong, H	1
Ahn, H; Gwo, S; Hong, CC; Wu, CY	1
Jang, HW; Lee, JL; Lee, S; Ryu, SW; Yu, HK	1
Kikuchi, A; Kishino, K; Kouno, T; Yamano, K	1
Chao, S; Huang, CY; Ku, HM	1
Choi, HW; Fu, WY; Lai, PT; Wang, XH	1
Abiko, M; Feldmeier, C; Kawakami, Y; Micheletto, R; Schwarz, UT	1
Service, RF	1
Lee, JL; Son, JH	1
Huang, B; Li, J; Wang, Y; Wen, W; Wu, K; Yang, D; Yu, J	1
He, C; Hu, Z; Song, J; Wang, X; Wang, Z; Zhang, F	1
Chen, LJ; Gao, Z; Hao, Y; Huang, CT; Lee, WF; Lien, DH; Song, J; Tsai, CM; Wang, ZL	1
Dal Negro, L; Dimakis, E; DiMaria, J; Henson, J; Li, R; Minissale, S; Moustakas, TD; Paiella, R	1
Choi, YH; Jang, YD; Kim, CS; Kim, JH; Lee, D; Noh, MS; Shin, DM; Yee, KJ	1
Briot, O; Cuisinier, FJ; Estephan, E; Gergely, C; Larroque, C; Martin, M; Moret, M; Ruffenach, S; Saab, MB	1
Kong, Q; Li, J; Liao, Y; Wang, G; Wang, J; Wei, T; Yi, F; Zeng, Y	1
Han, M; Han, N; Hong, CH; Jeong, H; Jeong, MS; Kang, JH; Kim, HK; Kim, HY; Park, YJ; Ryu, JH	1
Fu, A; Gargas, DJ; Hahn, C; Hwang, YJ; Wu, CH; Yang, P; Zhang, Z	1
Forsberg, U; Holtz, PO; Hsu, CW; Janzén, E; Karlsson, KF; Lundskog, A	1
Baik, KH; Hwang, SM; Oh, K; Seo, YG; Son, JS; Song, H	1
Benes, B; Colby, R; Ewoldt, DA; García, RE; Liang, Z; Sands, TD; Stach, EA; Wildeson, IH; Zhang, T	1
Barnes, JP; Bougerol, C; Chen, X; Dang, Dle S; de Luna Bugallo, A; Durand, C; Eymery, J; Hwang, JS; Jacopin, G; Koester, R; Rigutti, L; Salomon, D; Tchernycheva, M	1
Fang, HC; Huang, JH; Ku, NJ; Liu, CP; Wang, CH	1
Crawford, MH; Cross, KC; Fathololoumi, S; Figiel, JJ; Koleske, DD; Lee, SR; Li, Q; Mi, Z; Wang, GT; Westlake, KR	1
Ahn, H; Gwo, S; Hong, YL; Tang, J; Yu, CC; Yu, P	1
Botton, GA; Cui, K; Djavid, M; Korinek, A; Mi, Z; Nguyen, HP; Zhang, S	1
Botton, GA; Cui, K; Fathololoumi, S; Golam Kibria, M; Mi, Z	1
Hahn, C; Hwang, YJ; Jeong, HE; Wu, CH; Yang, P	1
Hon, S; Huang, FW; Ko, TK; Lai, WC; Lee, ML; Sheu, JK; Tu, SJ; Yang, YC	1
Fan, GH; Yao, GR; Yin, YA; Zhang, YY	1
Baek, JH; Cho, YH; Jang, LW; Jeon, DW; Ju, JW; Lee, IH; Lee, SJ; Lee, SM; Park, JW; Polyakov, AY	1
Olle, VF; Penty, RV; Vasil'ev, PP; White, IH; Wonfor, A	1
Chen, DJ; Cui, B; Dabiran, AM; Liu, B; Lu, H; Wowchak, AM; Xu, K; Xue, JJ; Zhang, JP; Zhang, R; Zheng, YD	1
Blömers, Ch; Grützmacher, D; Huang, L; Lu, JG; Lüth, H; Schäpers, T; Witte, C	1
Boiko, DL; Vasil'ev, PP	1
Han, M; Han, N; Hong, CH; Kang, JH; Katharria, YS; Kim, HK; Kim, HY; Ko, KB; Park, YJ; Ryu, BD; Ryu, JH; Suh, EK	1
Bevan, KH; Fathololoumi, S; Guo, H; Kibria, MG; Li, Q; Liu, DP; Mi, Z; Wang, GT; Zhao, S	1
Chen, CC; Chen, LC	1
Bürgler, DE; Calarco, R; Grützmacher, D; Hardtdegen, H; Heedt, S; Morgan, C; Schäpers, T; Weis, K	1
Chang, YH; Gwo, S; Hsu, MC; Kao, KW; Yeh, JA	1
Fang, HC; Huang, JH; Huang, PC; Ku, NJ; Liu, CP; Wang, CH	1
Cardin, V; Dion-Bertrand, LI; Grégoire, P; Leonelli, R; Mi, Z; Nguyen, HP; Sakowicz, M; Silva, C	1
Cho, CY; Hong, SH; Kim, ST; Lee, SJ; Lim, W; Park, SJ; Yim, SY	1
Demir, HV; Hasanov, N; Ji, Y; Ju, Z; Kyaw, Z; Liu, W; Sun, XW; Tan, ST; Zhang, ZH; Zheng, K	1
Chao, L; Chen, X; Li, D; Li, S; Ren, Z; Tong, J; Wang, X; Yi, H; Zhang, J; Zhao, B; Zhuo, X	1
Ou, SL; Shen, KC; Wang, TY; Wuu, DS	1
Jia, C; Lu, H; Sun, Y; Tong, Y; Yu, T; Zhang, G; Zhong, C	1
Baik, KH; Kim, J; Park, H; Pearton, SJ; Ren, F	1
Bogdanoff, P; Fiechter, S; Geelhaar, L; Hauswald, C; Kamimura, J; Lähnemann, J; Riechert, H	1
Bae, SY; Kong, DJ; Lee, DS; Lee, JY; Seo, DJ	1
Alvi, Nu; Gómez, VJ; Kumar, P; Nötzel, R; Soto Rodriguez, PE; Willander, M; Zaman, S	1
Fang, W; Jiang, F; Mo, C; Wang, L; Zheng, C	1
Blum, I; Deconihout, B; Durand, C; Eymery, J; Hernández-Maldonado, D; Houard, J; Lefebvre, W; Rigutti, L; Shinde, D; Tchernycheva, M; Vella, A; Vurpillot, F	1
Chen, KJ; Chiu, CH; Kuo, HC; Kuo, YK; Lan, YP; Lee, PT; Lin, BC; Lin, CC; Shih, MH; Wang, CH	1
Demir, HV; Hasanov, N; Ji, Y; Ju, ZG; Kyaw, Z; Liu, W; Lu, S; Sun, XW; Tan, ST; Zhang, XL; Zhang, Y; Zhang, ZH; Zhu, B	1
Chang, SL; Chen, NC; Huang, CY; Lee, YJ; Lian, JT; Lin, HM; Lin, TY; Yang, YJ	1
Calleja, E; Calleja, JM; Gallardo, E; Grandal, J; Luna, E; Sánchez-García, MÁ; Trampert, A	1
Birch, J; Hsiao, CL; Hultman, L; Järrendahl, K; Magnusson, R; Palisaitis, J; Persson, PO; Sandström, P; Valyukh, S	1
Römer, F; Witzigmann, B	1
Bhattacharya, P; Jahangir, S; Millunchick, JM; Nikoobakht, B; Wight, SA; Yan, L	1
Du, S; Li, Z; Liu, C; Peng, M; Shi, X; Song, M; Wang, ZL; Zhai, J; Zhang, Y; Zheng, Q	1
Bacher, G; Blumenthal, S; Keller, G; Koester, R; Pfingsten, O; Poloczek, A; Prost, W; Quitsch, WA; Sager, D; Tegude, FJ	1
Abdulhalim, I; Ney, M	1
Chen, C; Duan, S; Fu, H; Liu, X; Mi, Z; Ou, P; Rashid, RT; Song, J; Song, P; Wang, Y	1

Reviews

1 review(s) available for indium nitride and indium

Article	Year
Novel semiconductor materials for the development of chemical sensors and biosensors: a review. Analytica chimica acta, 2008, May-12, Volume: 615, Issue:1 Topics: Biosensing Techniques; Diamond; Electrodes; Gallium; Indium; Semiconductors; Silicon Dioxide; Surface Properties	2008

Other Studies

75 other study(ies) available for indium nitride and indium

Article	Year
[Raman spectra and photoluminescence spectra of InGaN/GaN multiquantum wells annealed]. Guang pu xue yu guang pu fen xi = Guang pu, 2005, Volume: 25, Issue:1 Topics: Gallium; Hot Temperature; Indium; Luminescence; Luminescent Measurements; Photochemical Processes; Spectrophotometry; Spectrum Analysis, Raman	2005
Photoluminescence and intrinsic properties of MBE-grown InN nanowires. Nano letters, 2006, Volume: 6, Issue:7 Topics: Indium; Luminescence; Microscopy, Electron; Nanostructures; Nitrogen; Photochemistry	2006
InN nanocrystals, nanowires, and nanotubes. Small (Weinheim an der Bergstrasse, Germany), 2005, Volume: 1, Issue:1 Topics: Crystallization; Indium; Microscopy, Electron; Nanotubes; Nanowires; Spectrophotometry	2005
Synthesis of long indium nitride nanowires with uniform diameters in large quantities. Small (Weinheim an der Bergstrasse, Germany), 2005, Volume: 1, Issue:10 Topics: Indium; Light; Microscopy, Electron, Scanning; Microscopy, Electron, Transmission; Models, Chemical; Nanostructures; Nanotechnology; Nanotubes; Nanowires; Powders; Semiconductors; Spectrophotometry; Surface Properties; Temperature; X-Ray Diffraction	2005
Nanobeam electron diffraction and high resolution imaging analysis of InN films grown on sapphire. Microscopy research and technique, 2007, Volume: 70, Issue:3 Topics: Indium; Microscopy, Electron, Transmission; Nanotechnology; Nanowires	2007
Electrically excited infrared emission from InN nanowire transistors. Nano letters, 2007, Volume: 7, Issue:8 Topics: Electric Wiring; Electrochemistry; Electromagnetic Fields; Equipment Design; Equipment Failure Analysis; Indium; Infrared Rays; Lighting; Nanotechnology; Nanotubes; Particle Size; Transistors, Electronic	2007
Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Nanotechnology, 2009, Jun-17, Volume: 20, Issue:24 Topics: Gallium; Indium; Microscopy, Fluorescence, Multiphoton; Quantum Dots; Spectrometry, Fluorescence	2009
Spontaneous emission in GaN/InGaN photonic crystal nanopillars. Optics express, 2007, Dec-24, Volume: 15, Issue:26 Topics: Computer Simulation; Computer-Aided Design; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Models, Chemical; Nanotechnology; Nanotubes; Reproducibility of Results; Sensitivity and Specificity	2007
2.7 W tunable orange-red GaInNAs semiconductor disk laser. Optics express, 2007, Dec-24, Volume: 15, Issue:26 Topics: Color; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Reproducibility of Results; Sensitivity and Specificity	2007
Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micro-pixelated light-emitting diodes. Optics express, 2008, Nov-10, Volume: 16, Issue:23 Topics: Computer-Aided Design; Crystallization; Epoxy Compounds; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Nanostructures; Nanotechnology; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Signal Processing, Computer-Assisted	2008
Origin of the anomalous temperature evolution of photoluminescence peak energy in degenerate InN nanocolumns. Optics express, 2009, Jul-06, Volume: 17, Issue:14 Topics: Equipment Design; Indium; Light; Luminescence; Metal Nanoparticles; Microscopy, Electron, Scanning; Microscopy, Electron, Transmission; Nanotechnology; Photochemistry; Semiconductors; Spectrophotometry; Temperature	2009
Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics express, 2009, Aug-03, Volume: 17, Issue:16 Topics: Computer Simulation; Computer-Aided Design; Dimethylpolysiloxanes; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Models, Theoretical; Optical Devices; Quantum Theory; Scattering, Radiation; Semiconductors; Transducers	2009
Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays. Optics express, 2009, Sep-28, Volume: 17, Issue:20 Topics: Color; Gallium; Indium; Lighting; Luminescent Agents; Luminescent Measurements; Materials Testing; Nanotubes	2009
The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes. Nanotechnology, 2010, Jan-15, Volume: 21, Issue:2 Topics: Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Macromolecular Substances; Materials Testing; Microelectrodes; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Semiconductors; Surface Properties	2010
Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission. Optics express, 2009, Oct-26, Volume: 17, Issue:22 Topics: Color; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Lighting; Nanostructures; Nanotechnology; Reproducibility of Results; Sensitivity and Specificity	2009
Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal. Optics express, 2009, Dec-21, Volume: 17, Issue:26 Topics: Computer-Aided Design; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Photons; Semiconductors	2009
Evaluation of InGaN/GaN light-emitting diodes of circular geometry. Optics express, 2009, Dec-07, Volume: 17, Issue:25 Topics: Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Models, Chemical; Semiconductors	2009
Transient memory effect in the photoluminescence of InGaN single quantum wells. Optics express, 2009, Dec-07, Volume: 17, Issue:25 Topics: Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Luminescent Measurements; Quantum Dots; Semiconductors	2009
Nitrides race beyond the light. Science (New York, N.Y.), 2010, Mar-26, Volume: 327, Issue:5973 Topics: Electronics, Medical; Gallium; Humans; Indium; Semiconductors; Silicon	2010
Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes. Optics express, 2010, Mar-15, Volume: 18, Issue:6 Topics: Compressive Strength; Computer Simulation; Computer-Aided Design; Elastic Modulus; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Models, Chemical; Semiconductors; Stress, Mechanical	2010
Aluminothermal reaction approach for micro-/nanofabrications: syntheses of In2O3 micro-/nanostructures and InN octahedral nanoshells. Advanced materials (Deerfield Beach, Fla.), 2010, Apr-06, Volume: 22, Issue:13 Topics: Aluminum; Indium; Nanoshells; Nanostructures; Nanotechnology; Temperature	2010
Electricity generation based on one-dimensional group-III nitride nanomaterials. Advanced materials (Deerfield Beach, Fla.), 2010, May-18, Volume: 22, Issue:19 Topics: Aluminum Compounds; Electricity; Gallium; Indium; Nanostructures; Semiconductors; X-Ray Diffraction	2010
Single-InN-nanowire nanogenerator with upto 1 V output voltage. Advanced materials (Deerfield Beach, Fla.), 2010, Sep-22, Volume: 22, Issue:36 Topics: Crystallography, X-Ray; Electric Conductivity; Electric Power Supplies; Indium; Microscopy, Atomic Force; Nanowires; Platinum	2010
Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays. Optics express, 2010, Sep-27, Volume: 18, Issue:20 Topics: Color; Electronics; Gallium; Indium; Light; Metal Nanoparticles; Nanotechnology; Optics and Photonics; Photochemistry; Quantum Dots; Silver; Surface Plasmon Resonance	2010
Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers. Optics express, 2010, Dec-20, Volume: 18, Issue:26 Topics: Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Photometry; Protons	2010
Phages recognizing the Indium Nitride semiconductor surface via their peptides. Journal of peptide science : an official publication of the European Peptide Society, 2011, Volume: 17, Issue:2 Topics: Indium; Microscopy, Atomic Force; Peptide Library; Peptides; Semiconductors	2011
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands. Optics express, 2011, Jan-17, Volume: 19, Issue:2 Topics: Cesium; Chlorides; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Nanostructures; Nanotechnology; Semiconductors; Surface Properties	2011
Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes. Optics express, 2011, Jan-31, Volume: 19, Issue:3 Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Nanospheres; Nanotechnology; Particle Size; Semiconductors; Silicon Dioxide	2011
Epitaxial growth of InGaN nanowire arrays for light emitting diodes. ACS nano, 2011, May-24, Volume: 5, Issue:5 Topics: Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Nanostructures; Particle Size; Semiconductors	2011
Single excitons in InGaN quantum dots on GaN pyramid arrays. Nano letters, 2011, Jun-08, Volume: 11, Issue:6 Topics: Gallium; Indium; Luminescent Measurements; Quantum Dots; Temperature	2011
Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates. Optics express, 2011, Jul-04, Volume: 19, Issue:14 Topics: Aluminum Oxide; Color; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Semiconductors	2011
Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano letters, 2011, Nov-09, Volume: 11, Issue:11 Topics: Computer Simulation; Electromagnetic Fields; Gallium; Indium; Macromolecular Substances; Models, Chemical; Molecular Conformation; Nanostructures; Particle Size; Surface Properties	2011
M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices. Nano letters, 2011, Nov-09, Volume: 11, Issue:11 Topics: Electronics; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Luminescent Measurements; Nanostructures; Nanotechnology; Particle Size	2011
Crystal face-dependent nanopiezotronics of an obliquely aligned InN nanorod array. Nano letters, 2012, Feb-08, Volume: 12, Issue:2 Topics: Crystallization; Electron Transport; Indium; Nanotechnology; Nanotubes; Particle Size; Surface Properties	2012
Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays. Optics express, 2011, Dec-05, Volume: 19, Issue:25 Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Nanotubes; Semiconductors	2011
Carrier dynamics in InN nanorod arrays. Optics express, 2012, Jan-16, Volume: 20, Issue:2 Topics: Electronics; Indium; Microscopy, Electron, Scanning; Nanotechnology; Nanotubes; Optics and Photonics	2012
Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes. Nano letters, 2012, Mar-14, Volume: 12, Issue:3 Topics: Color; Electron Transport; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Materials Testing; Nanotubes; Semiconductors	2012
Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates. Nanotechnology, 2012, Mar-02, Volume: 23, Issue:8 Topics: Catalysis; Crystallization; Gallium; Heavy Ions; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Porosity; Quantum Dots; Silicon; Surface Properties	2012
Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties. Nano letters, 2012, Mar-14, Volume: 12, Issue:3 Topics: Electric Conductivity; Gallium; Indium; Light; Materials Testing; Nanostructures; Silicon Compounds	2012
Vertical InGaN light-emitting diodes with a sapphire-face-up structure. Optics express, 2012, Jan-02, Volume: 20, Issue:1 Topics: Aluminum Oxide; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Semiconductors	2012
Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers. Optics express, 2012, Jan-02, Volume: 20, Issue:1 Topics: Color; Computer Simulation; Computer-Aided Design; Electron Transport; Equipment Design; Equipment Failure Analysis; Indium; Light; Lighting; Models, Theoretical; Scattering, Radiation; Semiconductors	2012
Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer. Optics express, 2012, Mar-12, Volume: 20, Issue:6 Topics: Energy Transfer; Equipment Design; Equipment Failure Analysis; Gallium; Gold; Indium; Lighting; Nanotubes; Semiconductors	2012
Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure. Optics express, 2012, Mar-26, Volume: 20, Issue:7 Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Signal Processing, Computer-Assisted	2012
Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template. Optics express, 2012, Mar-26, Volume: 20, Issue:7 Topics: Crystallization; Gallium; Indium; Materials Testing; Molecular Imprinting; Nanotechnology; Semiconductors	2012
Electronic transport with dielectric confinement in degenerate InN nanowires. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Computer Simulation; Electric Conductivity; Electron Transport; Indium; Models, Chemical; Nanostructures	2012
Superradiance dynamics in semiconductor laser diode structures. Optics express, 2012, Apr-23, Volume: 20, Issue:9 Topics: Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Models, Chemical; Quantum Dots	2012
High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors. Optics express, 2012, Apr-23, Volume: 20, Issue:9 Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Quantum Dots; Refractometry; Semiconductors	2012
Tuning the surface charge properties of epitaxial InN nanowires. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Crystallization; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Static Electricity; Surface Properties	2012
Fabrication and characteristics of ZnO/OAD-InN/PbPc hybrid solar cells prepared by oblique-angle deposition. Molecules (Basel, Switzerland), 2012, Aug-08, Volume: 17, Issue:8 Topics: Electric Impedance; Electric Power Supplies; Electrochemistry; Indium; Nanostructures; Organometallic Compounds; Particle Size; Semiconductors; Solar Energy; X-Ray Diffraction; Zinc Oxide	2012
Electrical spin injection into InN semiconductor nanowires. Nano letters, 2012, Sep-12, Volume: 12, Issue:9 Topics: Crystallization; Electroplating; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Semiconductors; Surface Properties	2012
A sub-ppm acetone gas sensor for diabetes detection using 10 nm thick ultrathin InN FETs. Sensors (Basel, Switzerland), 2012, Volume: 12, Issue:6 Topics: Acetone; Biosensing Techniques; Diabetes Mellitus; Electricity; Gases; Humans; Indium; Oxygen; Platinum; Transistors, Electronic	2012
Energy harvesting from the obliquely aligned InN nanowire array with a surface electron-accumulation layer. Advanced materials (Deerfield Beach, Fla.), 2013, Feb-13, Volume: 25, Issue:6 Topics: Crystallization; Electrons; Indium; Microscopy, Atomic Force; Nanowires	2013
Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111). Nanotechnology, 2013, Feb-01, Volume: 24, Issue:4 Topics: Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotubes; Particle Size; Silicon; Surface Properties	2013
Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles. Optics express, 2013, Feb-11, Volume: 21, Issue:3 Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Metal Nanoparticles; Platinum; Semiconductors; Silver; Surface Plasmon Resonance; Ultraviolet Rays	2013
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer. Optics express, 2013, Feb-25, Volume: 21, Issue:4 Topics: Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Semiconductors	2013
Enhanced performance of InGaN/GaN based solar cells with an In(0.05)Ga(0.95)N ultra-thin inserting layer between GaN barrier and In(0.2)Ga(0.8)N well. Optics express, 2013, Mar-25, Volume: 21, Issue:6 Topics: Electric Power Supplies; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lenses; Miniaturization; Solar Energy	2013
Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition. Optics express, 2013, Mar-25, Volume: 21, Issue:6 Topics: Gallium; Hardness; Hot Temperature; Indium; Lasers; Membranes, Artificial; Surface Properties; Vacuum	2013
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs. Optics express, 2013, Apr-08, Volume: 21, Issue:7 Topics: Color; Elastic Modulus; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Semiconductors; Stress, Mechanical	2013
A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics express, 2013, May-20, Volume: 21, Issue:10 Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Materials Testing; Metal Nanoparticles; Nanotubes; Semiconductors	2013
Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy. Journal of the American Chemical Society, 2013, Jul-17, Volume: 135, Issue:28 Topics: Electrochemical Techniques; Gallium; Indium; Mass Spectrometry; Nanowires; Particle Size; Photochemical Processes; Surface Properties; Water	2013
Size-controlled InGaN/GaN nanorod array fabrication and optical characterization. Optics express, 2013, Jul-15, Volume: 21, Issue:14 Topics: Birefringence; Crystallization; Elastic Modulus; Gallium; Indium; Light; Materials Testing; Nanotubes; Particle Size	2013
An InN/InGaN quantum dot electrochemical biosensor for clinical diagnosis. Sensors (Basel, Switzerland), 2013, Oct-15, Volume: 13, Issue:10 Topics: Biosensing Techniques; Cholesterol; Conductometry; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity	2013
Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate. TheScientificWorldJournal, 2013, Volume: 2013 Topics: Equipment Design; Gallium; Indium; Light; Lighting; Luminescence; Microscopy, Fluorescence; Quantum Theory; Silicon; Temperature; X-Ray Diffraction	2013
Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN multiquantum well system. Nano letters, 2014, Jan-08, Volume: 14, Issue:1 Topics: Gallium; Indium; Luminescent Measurements; Materials Testing; Microscopy, Atomic Force; Microscopy, Electron, Scanning Transmission; Molecular Conformation; Nanoparticles; Quantum Theory; Statistics as Topic	2014
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer. Optics express, 2014, Jan-13, Volume: 22, Issue:1 Topics: Aluminum Compounds; Electron Transport; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Materials Testing; Semiconductors	2014
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes. Optics express, 2014, Jan-13, Volume: 22, Issue:1 Topics: Electrodes; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Materials Testing; Semiconductors	2014
Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme. Optics letters, 2014, Feb-15, Volume: 39, Issue:4 Topics: Cost-Benefit Analysis; Feasibility Studies; Gallium; Indium; Semiconductors; Temperature; Zinc Oxide	2014
Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study. Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 2014, Volume: 20, Issue:5 Topics: Indium; Microscopy, Electron, Transmission; Nanowires	2014
Curved-lattice epitaxial growth of In(x)Al(1-x)N nanospirals with tailored chirality. Nano letters, 2015, Jan-14, Volume: 15, Issue:1 Topics: Aluminum Compounds; Crystallization; Indium; Nanoparticles	2015
Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs. Optics express, 2014, Oct-20, Volume: 22 Suppl 6 Topics: Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Models, Chemical; Quantum Theory; Scattering, Radiation; Semiconductors	2014
Structural and optical properties of disc-in-wire InGaN/GaN LEDs. Nano letters, 2015, Mar-11, Volume: 15, Issue:3 Topics: Energy Transfer; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Materials Testing; Nanowires; Particle Size; Semiconductors	2015
High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging. ACS nano, 2015, Mar-24, Volume: 9, Issue:3 Topics: Electricity; Gallium; Indium; Nanotechnology; Optical Imaging; Optical Phenomena; Photons; Pressure; Semiconductors	2015
High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111). Nano letters, 2015, Apr-08, Volume: 15, Issue:4 Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Materials Testing; Nanowires; Particle Size; Semiconductors; Silicon	2015
Ultrahigh polarimetric image contrast enhancement for skin cancer diagnosis using InN plasmonic nanoparticles in the terahertz range. Journal of biomedical optics, 2015, Volume: 20, Issue:12 Topics: Computer Simulation; Humans; Image Enhancement; Image Processing, Computer-Assisted; Indium; Light; Limit of Detection; Monte Carlo Method; Nanoparticles; Polymers; Reproducibility of Results; Scattering, Radiation; Skin; Skin Neoplasms; Surface Plasmon Resonance; Terahertz Radiation; Xylenes	2015
A microfluidic field-effect transistor biosensor with rolled-up indium nitride microtubes. Biosensors & bioelectronics, 2021, Oct-15, Volume: 190 Topics: Biosensing Techniques; Humans; Indium; Microfluidics; Transistors, Electronic	2021