indium arsenide has been researched along with silicon in 18 studies
| Timeframe | Studies, this research(%) | All Research% |
|---|---|---|
| pre-1990 | 0 (0.00) | 18.7374 |
| 1990's | 0 (0.00) | 18.2507 |
| 2000's | 3 (16.67) | 29.6817 |
| 2010's | 15 (83.33) | 24.3611 |
| 2020's | 0 (0.00) | 2.80 |
| Authors | Studies |
|---|---|
| Bhattacharya, P; Yang, J | 1 |
| Arakawa, Y; Guimard, D; Iwamoto, S; Nomura, M; Tanabe, K | 1 |
| Franceschetti, A; Luo, JW; Zunger, A | 1 |
| Arakawa, Y; Bordel, D; Guimard, D; Iwamoto, S; Tanabe, K | 1 |
| Baumgart, C; Facsko, S; Helm, M; Kanjilal, A; Liedke, MO; Mücklich, A; Prucnal, S; Rebohle, L; Reuther, H; Schmidt, H; Shalimov, A; Skorupa, W; Zuk, J | 1 |
| Hu, H; Kim, KH; Li, X; Ning, CZ; Rogers, JA; Shin, JC; Yin, L; Yu, KJ; Zuo, JM | 1 |
| David, JP; Liu, H; Ng, JS; Sandall, I; Tan, CH; Wang, T | 1 |
| Cerutti, L; Gassenq, A; Hattasan, N; Rodriguez, JB; Roelkens, G; Tournié, E | 1 |
| Chang-Hasnain, C; Chen, R; Ko, WS; Lu, F; Ng, KW; Tran, TT | 1 |
| Jiang, Q; Lee, A; Liu, H; Seeds, A; Tang, M | 1 |
| Cavallo, F; Deneke, C; Huang, M; Lagally, MG; Malachias, A; Merces, L; Rastelli, A; Schmidt, OG | 1 |
| Anttu, N; Borg, BM; Svensson, J; Vainorius, N; Wernersson, LE | 1 |
| He, JF; He, Y; He, YM; Li, MF; Lu, CY; Ni, HQ; Niu, ZC; Shang, XJ; Wang, GW; Wang, J; Wang, LJ; Wei, YJ; Yu, Y; Zha, GW | 1 |
| Fukui, T; Tomioka, K; Yoshimura, M | 1 |
| Dey, AW; Ek, M; Lind, E; Svensson, J; Thelander, C; Wernersson, LE | 1 |
| Abstreiter, G; Amann, MC; Bichler, M; Bormann, M; Döblinger, M; Finley, JJ; Koblmüller, G; Matich, S; Mayer, B; Morkötter, S; Saller, K; Schmeiduch, H; Treu, J; Wiecha, P | 1 |
| Grützmacher, D; Lepsa, MI; Mussler, G; Rieger, T; Rosenbach, D; Schäpers, T | 1 |
| Alic, L; Bouvy, ND; Schols, RM; Stassen, LP; Wieringa, FP | 1 |
18 other study(ies) available for indium arsenide and silicon
| Article | Year |
|---|---|
Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Fiber Optic Technology; Gallium; Hydrogen; Indium; Lasers, Semiconductor; Quantum Dots; Silicon; Systems Integration | 2008 |
Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Silicon; Temperature | 2009 |
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchange.
Topics: Arsenicals; Electrons; Indium; Quantum Dots; Semiconductors; Silicon | 2009 |
Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Solid-State; Quantum Dots; Silicon | 2010 |
n-InAs nanopyramids fully integrated into silicon.
Topics: Arsenicals; Indium; Nanostructures; Nanotechnology; Particle Size; Silicon; Silicon Dioxide; Surface Properties | 2011 |
In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics.
Topics: Arsenicals; Electromagnetic Fields; Gallium; Indium; Light; Materials Testing; Nanostructures; Particle Size; Silicon | 2011 |
1300 nm wavelength InAs quantum dot photodetector grown on silicon.
Topics: Absorption; Arsenicals; Germanium; Indium; Materials Testing; Microscopy, Electron, Transmission; Nanotechnology; Optics and Photonics; Photochemistry; Quantum Dots; Quantum Theory; Silicon; Surface Properties | 2012 |
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Infrared Rays; Light; Photometry; Refractometry; Scattering, Radiation; Semiconductors; Silicon; Surface Plasmon Resonance; Systems Integration | 2012 |
Nanolasers grown on silicon-based MOSFETs.
Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Nanotechnology; Silicon; Transistors, Electronic | 2012 |
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
Topics: Arsenicals; Crystallization; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Materials Testing; Quantum Dots; Silicon | 2012 |
Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates.
Topics: Arsenicals; Computer Simulation; Elastic Modulus; Indium; Materials Testing; Membranes, Artificial; Models, Chemical; Models, Molecular; Nanostructures; Silicon; Tensile Strength | 2012 |
Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors.
Topics: Arsenicals; Indium; Light; Nanowires; Particle Size; Photochemistry; Silicon; Surface Properties | 2013 |
Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
Topics: Arsenicals; Equipment Design; Gallium; Indium; Nanostructures; Nanotechnology; Nanowires; Quantum Dots; Silicon | 2013 |
Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique.
Topics: Arsenicals; Indium; Nanotechnology; Nanowires; Silicon; Surface Properties; Zinc | 2013 |
Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.
Topics: Arsenicals; Electrons; Graphite; Indium; Nanostructures; Nanowires; Semiconductors; Silicon; Transistors, Electronic | 2013 |
Enhanced luminescence properties of InAs-InAsP core-shell nanowires.
Topics: Arsenicals; Indium; Luminescence; Nanoshells; Nanostructures; Nanowires; Silicon; Surface Properties | 2013 |
Simultaneous integration of different nanowires on single textured Si (100) substrates.
Topics: Adsorption; Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Nanocomposites; Nanowires; Particle Size; Silicon; Surface Properties; Systems Integration | 2015 |
Towards automated spectroscopic tissue classification in thyroid and parathyroid surgery.
Topics: Adipose Tissue; Adolescent; Adult; Aged; Arsenicals; Automation; Calibration; Electronic Data Processing; Equipment Design; Female; Gallium; Humans; Indium; Male; Middle Aged; Parathyroid Glands; Regression Analysis; Silicon; Spectrophotometry; Spectrum Analysis; Thyroid Gland; Young Adult | 2017 |