Page last updated: 2024-08-26

indium arsenide and indium

indium arsenide has been researched along with indium in 206 studies

Research

Studies (206)

Timeframe	Studies, this research(%)	All Research%
pre-1990	0 (0.00)	18.7374
1990's	5 (2.43)	18.2507
2000's	87 (42.23)	29.6817
2010's	109 (52.91)	24.3611
2020's	5 (2.43)	2.80

Authors

Authors	Studies
Fowler, BA; Takahashi, K; Yamamura, Y; Yamauchi, H	1
Conner, EA; Fowler, BA; Yamauchi, H	2
Hirata, M; Hisanaga, A; Inoue, N; Ishinishi, N; Makita, Y; Omura, M; Tanaka, A	1
Gotoh, K; Hirata, M; Inoue, N; Ishinishi, N; Makita, Y; Omura, M; Tanaka, A; Zhao, M	2
Gotoh, K; Hirata, M; Inoue, N; Makita, Y; Omura, M; Tanaka, A; Yamazaki, K; Zhao, M	1
Aizawa, Y; Kotani, M; Kudo, Y; Lyons, YI; Okada, M; Shinji, H; Sugiura, Y; Watanabe, M	1
Gerthsen, D; Kruse, P; Rosenauer, A	1
Dal Savio, C; Danzebrink, HU; Güttler, B; Kazantsev, DV; Pierz, K	1
Hirata, M; Omura, M; Tanaka, A	1
Akaogi, T; Tanaka, M; Terauchi, M; Tsuda, K	1
Tanaka, A	1
Larsson, MW; Persson, AI; Samuelson, L; Wallenberg, LR	1
Alivisatos, AP; Ho, M; Hughes, SM; Konkar, A; Lu, S; Madhukar, A; Zhang, Y	1
Bhattacharya, P; Blom, DA; Chakrabarti, S; Holub, MA; Johnson, MB; Mishima, TD; Santos, MB	1
Alivisatos, AP; Hughes, SM; Konkar, A; Lu, S; Madhukar, A	1
Fang, Y; Huang, D; Liu, S; Shi, HZ; Wang, X; Yang, H; Yao, X; Zhang, B	1
Bawendi, MG; Frangioni, JV; Kim, SW; Ohnishi, S; Tracy, JB; Zimmer, JP	1
Lipsanen, H; Mattila, M; Riikonen, J; Sopanen, M; Sormunen, J; Tiilikainen, J	1
Björk, MT; Fasth, C; Fuhrer, A; Samuelson, L	1
Allen, JE; Lauhon, LJ; May, SJ; Perea, DE; Seidman, DN; Wessels, BW	1
Hessman, D; Landin, L; Persson, AI; Pettersson, H; Samuelson, L; Trägårdh, J	1
Bawendi, MG; Frangioni, JV; Kim, SW; Ohnishi, S; Tanaka, E; Zimmer, JP	1
Gao, Q; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Suvorova, AA; Tan, HH; Zou, J	1
Bell, DJ; Dong, L; Golling, M; Grützmacher, D; Nelson, BJ; Zhang, L	1
Bauer, GU; Eriksson, J; Karlsson, LS; Mandl, B; Mårtensson, T; Mikkelsen, A; Samuelson, L; Seifert, W; Stangl, J	1
Lind, E; Persson, AI; Samuelson, L; Wernersson, LE	1
Liang, B; Salamo, GJ; Shih, CK; Wang, X; Wang, ZM	1
Aharoni, A; Banin, U; Millo, O; Steiner, D	1
Ferrere, S; Frank, AJ; Norman, AG; Nozik, AJ; Yu, P; Zhu, K	1
Arakawa, Y; Bell, GR; Honma, T; Ishii, A; Tsukamoto, S	1
Aplin, DP; Dayeh, SA; Wang, D; Yu, ET; Yu, PK; Zhou, X	1
Lee, J; Liang, B; Mazur, YI; Sablon, KA; Salamo, GJ; Strom, NW; Wang, ZM	1
Holtz, PO; Karlsson, KF; Larsson, M; Monemar, B; Moskalenko, ES; Petroff, PM; Schoenfeld, WV	1
Mukai, K; Nakashima, K	1
Cirlin, GE; Harmand, JC; Patriarche, G; Perinetti, U; Tchernycheva, M; Travers, L; Zwiller, V	1
Dayeh, SA; Wang, D; Yu, ET	3
Biasiol, G; Carlino, E; Golinelli, GB; Grillo, V; Guo, FZ; Heun, S; Locatelli, A; Mentes, TO; Sorba, L	1
Bordag, M; Conache, G; Fröberg, LE; Gray, S; Montelius, L; Pettersson, H; Ribayrol, A; Samuelson, L	1
Asakawa, K; Ikeda, N; Nakamura, Y; Ohkouchi, S; Sugimoto, Y	1
Ahmad, I; Avrutin, V; Baski, AA; Moore, JC; Morkoç, H	1
Bakkers, EP; Bleszynski, AC; Kouwenhoven, LP; Roest, AL; Westervelt, RM; Zwanenburg, FA	1
Atatüre, M; Badolato, A; Dreiser, J; Goldberg, BB; Imamoglu, A; Swan, AK; Unlü, MS; Vamivakas, AN; Yilmaz, ST	1
Eymery, J; Favre-Nicolin, V; Fröberg, L; Mårtensson, T; Niquet, YM; Rieutord, F; Robach, O; Samuelson, L	1
Jiang, X; Li, Y; Lieber, CM; Nam, S; Qian, F; Xiong, Q	1
Alloing, B; Balet, L; Chauvin, N; Fiore, A; Gérard, JM; Gilet, P; Grenouillet, L; Li, L; Olivier, N; Tchelnokov, A; Terrier, M; Zinoni, C	1
Auchterlonie, GJ; Gao, Q; Guo, YN; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Tan, HH; Zou, J	1
Klimov, VI; Pietryga, JM; Schaller, RD	1
Ensslin, K; Krischek, R; Leturcq, R; Pfund, A; Schön, S; Shorubalko, I; Tyndall, D	1
Aslan, B; Hawrylak, P; Korkusinski, M; Liu, HC; Lockwood, DJ	1
Chen, Z; Li, G; Wang, T	1
Attaluri, RS; Averitt, RD; Krishna, S; Prasankumar, RP; Rotella, P; Stintz, AD; Taylor, AJ; Urayama, J; Weisse-Bernstein, N	1
Calligaro, M; Capua, A; Eisenstein, G; Forchel, A; Krakowski, M; Mikhelashvili, V; Parillaud, O; Reithmaier, JP; Somers, A	1
Akca, IB; Aydinli, A; Dagli, N; Dana, A; Fiore, A; Li, L; Rossetti, M	1
Bhattacharya, P; Yang, J	1
Cade, NI; Ding, D; Gotoh, H; Johnson, SR; Kamada, H; Kuramochi, E; Notomi, M; Sogawa, T; Tanabe, T; Tawara, T; Zhang, YH	1
Fischer, M; Forchel, A; Gerschütz, F; Höfling, S; Kaiser, W; Koeth, J; Kovsh, A; Krestnikov, I; Schilling, C	1
Abedin, KS; Akimoto, R; Ishikawa, H; Lu, GW; Miyazaki, T	1
Caroff, P; Deppert, K; Dick, KA; Jeppsson, M; Nilsson, HA; Samuelson, L; Wagner, JB; Wallenberg, LR; Wernersson, LE	1
Thomas, J	1
Aagesen, M; Feidenhans'l, R; Johnson, E; Lindelof, PE; Mariager, SO; Nygård, J; Spiecker, E; Sørensen, CB	1
Peng, X; Xie, R	1
Conache, G; Fröberg, LE; Gray, SM; Montelius, L; Pettersson, H; Ribayrol, A; Samuelson, L	1
Coldren, LA; Dummer, MM; Klamkin, J; Raring, JR; Tauke-Pedretti, A	1
Holtz, PO; Larsson, LA; Larsson, M; Moskalenko, ES; Petroff, PM; Schoenfeld, WV	1
Bokor, J; Chueh, YL; Fan, Z; Ford, AC; Guo, J; Ho, JC; Javey, A; Tseng, YC	1
Gao, Q; Guo, Y; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Tan, HH; Wang, Y; Zhang, X; Zou, J	1
Lee, JH; Liang, BL; Mazur, YI; Salamo, GJ; Shih, CK; Wang, XY; Wang, ZM	1
Buhro, WE; Gibbons, PC; Hollingsworth, JA; Jeong, S; Pietryga, JM; Wang, F; Yu, H	1
Bordas, F; Dupuy, E; Gendry, M; Rahmani, A; Regreny, P; Seassal, C; Steel, MJ; Viktorovitch, P	1
Adachi, S; Inoue, S; Namekata, N	1
Arakawa, Y; Guimard, D; Iwamoto, S; Nomura, M; Tanabe, K	1
Chen, P; Fukui, T; Geng, MM; Jia, LX; Liu, YL; Motohisa, J; Yang, L; Zhang, L	1
Franchi, S; Frigeri, P; Geddo, M; Guizzetti, G; Seravalli, L; Trevisi, G	1
Lee, JY; McKay, H; Millunchick, JM; Noordhoek, MJ; Smereka, P	1
Biasiol, G; Bocchi, C; Caroff, P; Fröberg, L; Nilsson, K; Roddaro, S; Rossi, F; Samuelson, L; Sorba, L; Wagner, JB; Wernersson, LE	1
Capua, A; Eisenstein, G; Forchel, A; Mikhelashvili, V; O'Duill, S; Reithmaier, JP; Somers, A	1
Franceschetti, A; Luo, JW; Zunger, A	1
Barrios, PJ; Grant, P; Liu, JR; Lu, ZG; Pakulski, G; Poitras, D; Poole, PJ; Raymond, S; Roy-Guay, D	1
Englund, D; Faraon, A; Toishi, M; Vucković, J	1
Alén, B; Dotor, ML; Fuster, D; González, L; González, Y; Martínez, LJ; Postigo, PA; Prieto, I	1
Beyer, J; Buyanova, IA; Chen, WM; Suraprapapich, S; Tu, CW	1
Du, J; Gao, XP; Liang, D; Tang, H	1
Franchi, S; Frigeri, P; Seravalli, L; Trevisi, G	1
Erwin, SC; First, PN; Rutter, GM; Song, YJ; Stroscio, JA; Zhitenev, NB	1
Cahill, DG; Koh, YK; Linke, H; Persson, AI; Samuelson, L	1
Chiragh, FL; Lester, LF; Li, Y; Lin, CY; Xin, YC	1
Li, F; Mi, Z	1
Kakitsuka, T; Kitayama, K; Matsuo, S; Tomofuji, S	1
Borg, BM; Dey, AW; Egard, M; Johansson, AC; Johansson, S; Lind, E; Persson, KM; Thelander, C; Wernersson, LE	1
Petta, JR; Schroer, MD	1
Dündar, MA; Karouta, F; Nötzel, R; Ryckebosch, EC; van der Heijden, RW; van Ijzendoorn, LJ	1
Bur, JA; Chang, CC; Huang, D; Kim, YS; Krishna, S; Lin, SY; Sharma, YD; Shenoi, RV	1
Borgström, MT; Caroff, P; Dick, KA; Fröberg, LE; Nilsson, HA; Samuelson, L; Thelander, C	1
Brongersma, SH; Crego-Calama, M; Offermans, P	1
Arakawa, Y; Bordel, D; Guimard, D; Iwamoto, S; Tanabe, K	1
Barea, LA; Camposeo, A; Del Carro, P; Frateschi, NC; Mialichi, JR; Persano, L; Pisignano, D	1
Beltram, F; Ercolani, D; Grillo, V; Heun, S; Kulkarni, GU; Radha, B; Rossi, F; Salviati, G; Sorba, L	1
Brown, SW; Kehoe, M; Lin, M; Lykke, KR; Moon, T; Smith, C; Swanson, R	1
Cataluna, MA; Fedorova, KA; Krestnikov, I; Livshits, D; Rafailov, EU	1
Claudon, J; Gérard, JM; Gregersen, N; Mørk, J; Nielsen, TR	1
Adams, DC; Chow, WW; Davids, P; Lyon, S; Passmore, BS; Ribaudo, T; Shaner, EA; Wasserman, D	1
Chen, X; Jian, Y; Wu, E; Wu, G; Zeng, H	1
Banin, U; Chen, G; Harats, MG; Rapaport, R; Schwarz, I; Zimran, A	1
Berthing, T; Bonde, S; Martinez, KL; Nygård, J; Sørensen, CB; Utko, P	1
Beltram, F; Blumin, M; Heun, S; Nair, SV; Paradiso, N; Roddaro, S; Ruda, HE; Salfi, J; Savelyev, IG	1
Coleman, JJ; Dias, NL; Garg, A; Mirin, RP; Silverman, KL; Stevens, MJ; Verma, VB	1
Dorogan, VG; Li, S; Mazur, YI; Salamo, GJ; Wang, ZM; Wu, J	1
Ivanisevic, A; Jewett, S; Zemlyanov, D	1
Assaid, E; Bailach, JB; Dujardin, F; Feddi, E; Martínez-Pastor, J; Oukerroum, A	1
Baer, S; Choi, T; Dröscher, S; Ensslin, K; Güttinger, J; Ihn, T; Molitor, F; Müller, T; Roulleau, P	1
Arciprete, F; Balzarotti, A; Fanfoni, M; Patella, F; Placidi, E; Zallo, E	1
Bauer, G; Bechstedt, F; Caroff, P; Dick, KA; Ercolani, D; Keplinger, M; Kriegner, D; Mandl, B; Panse, C; Persson, JM; Sorba, L; Stangl, J	1
Beltram, F; Ercolani, D; Pescaglini, A; Roddaro, S; Sorba, L	1
Kulbachinskii, VA; Shchurova, LY	1
Kim, H; Morris, CM; Petroff, PM; Pryor, C; Sherwin, MS; Stehr, D; Truong, TA	1
Caroff, P; Dey, AW; Dick, KA; Plissard, S; Thelander, C	1
Little, JW; Mitin, V; Reinhardt, K; Sablon, KA; Sergeev, A; Vagidov, N	1
Liu, J; Liu, W; Qin, L; Tang, Q; Wu, RH; Yuan, X; Zhang, D; Zhang, H; Zhang, Y; Zhao, Y	1
Baumgart, C; Facsko, S; Helm, M; Kanjilal, A; Liedke, MO; Mücklich, A; Prucnal, S; Rebohle, L; Reuther, H; Schmidt, H; Shalimov, A; Skorupa, W; Zuk, J	1
Hu, H; Kim, KH; Li, X; Ning, CZ; Rogers, JA; Shin, JC; Yin, L; Yu, KJ; Zuo, JM	1
Bechtel, HA; Chueh, YL; Fang, H; Gao, Q; Guo, J; Javey, A; Kapadia, R; Kim, HS; Krishna, S; Kumar, SB; Liu, CH; Madsen, M; Plis, E; Takei, K	1
Gao, XP; Liang, D; Lin, PA; Reeves, S; Sankaran, RM	1
Ford, AC; Guo, J; Javey, A; Kapadia, R; Kumar, SB	1
Chiu, YJ; Wu, JP; Wu, TH	1
Capua, A; Eisenstein, G; Karni, O; Reithmaier, JP; Saal, A; Yvind, K	1
Dubrovskii, VG; Ercolani, D; Lugani, L; Sibirev, NV; Sorba, L; Timofeeva, MA	1
Fukui, T; Hong, YJ; Lee, WH; Ruoff, RS; Wu, Y	1
Čukarić, N; Partoens, B; Peeters, FM; Ravi Kishore, VV; Tadić, M	1
Beyer, J; Buyanova, IA; Chen, WM; Suraprapapich, S; Tu, CW; Wang, PH	1
Capua, A; Eisenstein, G; Karni, O; Reithmaier, JP; Yvind, K	1
Ahn, KJ; Choi, JH; Han, WS; Kim, JH; Kim, SH; Lee, CM; Sim, SB; Yee, KJ	1
Barrios, PJ; Haffouz, S; Lu, Z; Normandin, R; Poitras, D	1
Alén, B; Canet-Ferrer, J; Dotor, ML; Fuster, D; González, L; González, Y; Martínez, LJ; Martínez-Pastor, JP; Muñoz-Matutano, G; Postigo, PA; Prieto, I	1
Bente, EA; Du, L; Heck, MJ; Nötzel, R; Smit, MK; Tahvili, MS	1
De Giorgi, M; Klimeck, G; O'Reilly, EP; Passaseo, A; Tasco, V; Todaro, MT; Usman, M	1
Gao, XP; Liang, D	1
Bhandari, NK; Cahay, M; Charles, J; Chetry, KB; Das, PP; Herbert, ST; Newrock, RS; Wan, J	1
David, JP; Liu, H; Ng, JS; Sandall, I; Tan, CH; Wang, T	1
Hsu, WC; Lee, CP; Ling, HS; Wang, SY	1
Ahn, B; Dapkus, PD; Lin, YT; Nutt, SR; O'Brien, JD; Sarkissian, R; Stewart, LS; Yeh, TW	1
Gotoh, H; Sogawa, T; Tateno, K; Zhang, G	1
Abstreiter, G; Becker, J; Bichler, M; Finley, JJ; Hertenberger, S; Koblmüller, G; Rudolph, D	1
Bolinsson, J; Borg, BM; Dick, KA; Johansson, J	1
Cerutti, L; Gassenq, A; Hattasan, N; Rodriguez, JB; Roelkens, G; Tournié, E	1
Chang-Hasnain, C; Chen, R; Ko, WS; Lu, F; Ng, KW; Tran, TT	1
Ivanisevic, A; Jewett, SA	1
Brown, A; Cho, E; Kuech, TF	1
Beltram, F; Ercolani, D; Pitanti, A; Roddaro, S; Romeo, L; Sorba, L	1
Berthing, T; Bonde, S; Madsen, MH; Martinez, KL; Nygård, J; Rostgaard, KR; Sørensen, CB	1
Fang, M; Han, N; Ho, JC; Hou, JJ; Hung, TF; Lin, H; Wang, F; Xiu, F; Yip, S	1
Cao, Y; Gu, Y; Ji, H; Ma, W; Xu, P; Yang, T	1
Gao, Q; Guo, Y; Jagadish, C; Liao, Z; Tan, HH; Wang, Y; Xu, H; Zou, J	1
Coldren, LA; Norberg, E; Parker, JS; Sivananthan, A	1
Edamura, T; Fujita, K; Furuta, S; Klimeck, G; Kubis, T; Tanaka, K; Yamanishi, M	1
Jiang, Q; Lee, A; Liu, H; Seeds, A; Tang, M	1
Liu, CP; Liu, H; Natrella, M; Renaud, CC; Rouvalis, E; Seeds, AJ	1
Cavallo, F; Deneke, C; Huang, M; Lagally, MG; Malachias, A; Merces, L; Rastelli, A; Schmidt, OG	1
Buyanova, IA; Chen, WM; Geelhaar, L; Ptak, AJ; Puttisong, Y; Riechert, H; Tu, CW	1
Alivisatos, AP; Beberwyck, BJ	1
Bawendi, MG; Harris, DK	1
Chuang, S; Ford, AC; Gao, Q; Guo, J; Javey, A; Kapadia, R	1
Lee, JS; Liu, W; Talapin, DV	1
Isakov, I; Panfilova, M; Sourribes, MJ; Warburton, PA	1
Chiu, CH; Chou, CL; Chou, WC; Jian, HT; Kuo, HC; Lin, JY; Shen, JL; Shu, GW; Wang, SC; Wu, CH	1
Anttu, N; Borg, BM; Svensson, J; Vainorius, N; Wernersson, LE	1
He, JF; He, Y; He, YM; Li, MF; Lu, CY; Ni, HQ; Niu, ZC; Shang, XJ; Wang, GW; Wang, J; Wang, LJ; Wei, YJ; Yu, Y; Zha, GW	1
Akiyama, H; Chen, S; Ito, T; Mochizuki, T; Yokoyama, H; Yoshita, M	1
Ker, PJ; Ng, JS; Sandall, IC; Tan, CH; Xie, S	1
Docherty, CJ; Gao, Q; Herz, LM; Jagadish, C; Johnston, MB; Joyce, HJ; Lloyd-Hughes, J; Tan, HH	1
Dietz, RJ; Helm, M; Künzel, H; Mittendorff, M; Sartorius, B; Schneider, H; Winnerl, S; Xu, M	1
Bechtel, HA; Fang, H; Javey, A; Krishna, S; Martin, MC; Plis, E; Yablonovitch, E	1
Gougousi, T; Ye, L	1
Campbell, J; Itzler, MA; Jiang, X; Lu, Z; Sun, W; Zhou, Q	1
Bracker, AS; Brereton, PG; Carter, SG; Gammon, D; Kim, CS; Kim, M; Park, D; Sweeney, TM; Vora, PM; Yakes, MK; Yang, L	1
Berthing, T; Frederiksen, RS; Holm, J; Liu, YC; Madsen, MH; Martinez, KL; Nygård, J; Rostgaard, KR	1
Andersen, TK; Anselme, K; Badique, F; Berthing, T; Bonde, S; Buch-Månson, N; Guo, L; Li, X; Madsen, MH; Martinez, KL; Nygård, J	1
Fukui, T; Hong, YJ; Kim, KS; Lee, WH; Ruoff, RS; Yang, JW	1
Fukui, T; Tomioka, K; Yoshimura, M	1
Dey, AW; Ek, M; Lind, E; Svensson, J; Thelander, C; Wernersson, LE	1
Huang, JY; Mao, SX; Wang, J; Zhang, Z; Zheng, H	1
Abstreiter, G; Amann, MC; Bichler, M; Bormann, M; Döblinger, M; Finley, JJ; Koblmüller, G; Matich, S; Mayer, B; Morkötter, S; Saller, K; Schmeiduch, H; Treu, J; Wiecha, P	1
Dai, Y; Forbes, D; Guo, W; Huang, Y; Hubbard, SM; Kim, TW; Kuech, TF; Mawst, LJ; Nealey, PF; Nesnidal, M; Wang, Z; Xiong, S	1
Chen, S; Jiang, Q; Liu, H; Seeds, A; Tang, M; Wu, J	1
Alarcon-Llado, E; Fontcuberta I Morral, A; Frederiksen, RS; Krogstrup, P; Madsen, MH; Martinez, KL; Nygård, J; Rostgaard, KR; Vosch, T	1
Chen, G; Chevallier, R; Haddadi, A; Hoang, AM; Razeghi, M	1
Grützmacher, D; Lepsa, MI; Mussler, G; Rieger, T; Rosenbach, D; Schäpers, T	1
Battle, PR; Fedorova, KA; Livshits, DA; Rafailov, EU; Sokolovskii, GS	1
Abstreiter, G; Hertenberger, S; Koblmüller, G; Morkötter, S; Postorino, P; Yazji, S; Zardo, I	1
Choi, I; Han, WS; Jo, B; Kim, J; Kim, JS; Lee, H; Leem, JY; Noh, SK; Oh, DK; Song, JH	1
Alarcon Lladó, E; Amaduzzi, F; Fontcuberta i Morral, A; Friedl, M; Matteini, F; McIntyre, PC; Potts, H; Tang, K; Tütüncüoglu, G	1
Alic, L; Bouvy, ND; Schols, RM; Stassen, LP; Wieringa, FP	1
Bawendi, MG; Bruns, OT; Carr, JA; Chen, O; Franke, D; Harris, DK; Wilson, MWB	1
Burke, AM; Carrad, DJ; Jagadish, C; Joyce, HJ; Krogstrup, P; Meredith, P; Micolich, AP; Mostert, AB; Nygård, J; Tan, HH; Ullah, AR	1
Suslov, S; Yang, C; Zi, Y	1
Field, JA; Gonzalez-Alvarez, A; Orenstein, E; Shadman, F; Sierra-Alvarez, R; Zeng, C	1
Bawendi, MG; Bertram, SN; Caram, JR; Franke, D; Grein, ME; Murphy, RP; Spokoyny, B; Yoo, JJ	1
Kim, HS; Kim, I; Ryu, H	1
Field, JA; Nguyen, CH; Sierra-Alvarez, R	1
Archetti, D; Neophytou, N	1
Darwan, D; Lim, LJ; Tan, ZK; Wang, T; Wijaya, H	1
Bahmani Jalali, H; De Trizio, L; Di Stasio, F; Manna, L	1
Ahn, J; Jeon, MG; Jung, BK; Kim, JH; Kim, S; Kim, SK; Lee, TJ; Oh, N; Oh, S; Oh, SJ; Seong, TY; Yun, KR	1

Reviews

3 review(s) available for indium arsenide and indium

Article	Year
Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide. Toxicology and applied pharmacology, 2004, Aug-01, Volume: 198, Issue:3 Topics: Aluminum Compounds; Animals; Arsenic Poisoning; Arsenicals; Female; Gallium; Humans; Indium; Lung Diseases; Male; Occupational Exposure; Semiconductors	2004
Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity. Accounts of chemical research, 2012, Sep-18, Volume: 45, Issue:9 Topics: Arsenicals; Indium; Surface Properties; Wettability	2012
Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials. Chemical Society reviews, 2022, Dec-12, Volume: 51, Issue:24 Topics: Arsenicals; Indium; Quantum Dots	2022

Other Studies

203 other study(ies) available for indium arsenide and indium

Article	Year
Metabolism of subcutaneous administered indium arsenide in the hamster. Toxicology and applied pharmacology, 1992, Volume: 116, Issue:1 Topics: Animals; Arsenic; Arsenicals; Cricetinae; Feces; Indium; Injections, Subcutaneous; Male; Tissue Distribution	1992
Alterations in the heme biosynthetic pathway from the III-V semiconductor metal, indium arsenide (InAs). Chemico-biological interactions, 1995, Jun-14, Volume: 96, Issue:3 Topics: Aminolevulinic Acid; Animals; Arsenic; Arsenicals; Cricetinae; Erythrocytes; Heme; Indium; Kidney; Liver; Male; Mesocricetus; Porphobilinogen Synthase; Porphyrins; Time Factors	1995
Chronic toxicity of indium arsenide and indium phosphide to the lungs of hamsters. Fukuoka igaku zasshi = Hukuoka acta medica, 1996, Volume: 87, Issue:5 Topics: Animals; Arsenic Poisoning; Arsenicals; Body Weight; Cricetinae; Indium; Lung; Male; Phosphines	1996
Testicular toxicity of gallium arsenide, indium arsenide, and arsenic oxide in rats by repetitive intratracheal instillation. Fundamental and applied toxicology : official journal of the Society of Toxicology, 1996, Volume: 32, Issue:1 Topics: Animals; Arsenic Poisoning; Arsenic Trioxide; Arsenicals; Gallium; Indium; Male; Organ Size; Oxides; Rats; Rats, Wistar; Sperm Count; Spermatozoa; Testis	1996
Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters. Toxicology letters, 1996, Dec-16, Volume: 89, Issue:2 Topics: Animals; Arsenic; Arsenic Poisoning; Arsenicals; Body Weight; Cricetinae; Epididymis; Gallium; Indium; Intubation, Intratracheal; Male; Organ Size; Sperm Count; Spermatids; Testis	1996
Comparative study of the toxic effects of gallium arsenide, indium arsenide and arsenic trioxide following intratracheal instillations to the lung of Syrian golden hamsters. Fukuoka igaku zasshi = Hukuoka acta medica, 2000, Volume: 91, Issue:1 Topics: Animals; Arsenic Trioxide; Arsenicals; Body Weight; Cricetinae; Gallium; Indium; Instillation, Drug; Kidney Tubules; Lung; Male; Mesocricetus; Organ Size; Oxides; Trachea	2000
In vitro toxicity of indium arsenide to alveolar macrophages evaluated by magnetometry, cytochemistry and morphological analysis. Toxicology letters, 2002, Aug-05, Volume: 134, Issue:1-3 Topics: Animals; Arsenicals; Cells, Cultured; Comet Assay; Cricetinae; Dose-Response Relationship, Drug; Electromagnetic Phenomena; In Situ Nick-End Labeling; Indium; L-Lactate Dehydrogenase; Macrophages, Alveolar; Male; Mesocricetus	2002
Determination of the mean inner potential in III-V semiconductors by electron holography. Ultramicroscopy, 2003, Volume: 96, Issue:1 Topics: Algorithms; Arsenicals; Gallium; Holography; Indium; Microscopy, Electron; Neutron Diffraction; Phosphines; Semiconductors	2003
Low-temperature scanning system for near- and far-field optical investigations. Journal of microscopy, 2003, Volume: 209, Issue:Pt 3 Topics: Arsenicals; Cold Temperature; Gallium; Helium; Indium; Light; Microscopy, Confocal; Microscopy, Scanning Probe; Models, Structural; Spectrometry, Fluorescence; Spectrum Analysis	2003
Pulmonary squamous cyst induced by exposure to indium arsenide in hamsters. Journal of occupational health, 2003, Volume: 45, Issue:6 Topics: Animals; Arsenicals; Carcinogens; Carcinoma, Squamous Cell; Cricetinae; Indium; Japan; Lung Neoplasms; Male; Mesocricetus	2003
Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED. Journal of electron microscopy, 2004, Volume: 53, Issue:1 Topics: Arsenicals; Crystallization; Crystallography; Gallium; Indium; Microscopy, Electron; Semiconductors	2004
Probing of individual semiconductor nanowhiskers by TEM-STM. Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 2004, Volume: 10, Issue:1 Topics: Arsenicals; Indium; Microscopy, Electron; Microscopy, Electron, Scanning Transmission; Nanotechnology; Semiconductors	2004
Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior. Nano letters, 2005, Volume: 5, Issue:3 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Optics and Photonics; Particle Size; Quantum Dots; Semiconductors; Systems Integration	2005
Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner. Nano letters, 2005, Volume: 5, Issue:2 Topics: Anisotropy; Arsenicals; Indium; Light; Magnetics; Manganese; Materials Testing; Nanotechnology; Nanotubes; Particle Size; Quantum Dots; Semiconductors; Spin Labels	2005
Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy. Nano letters, 2005, Volume: 5, Issue:5 Topics: Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Microscopy, Electron, Transmission; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Semiconductors	2005
Metabolomic and proteomic biomarkers for III-V semiconductors: chemical-specific porphyrinurias and proteinurias. Toxicology and applied pharmacology, 2005, Aug-07, Volume: 206, Issue:2 Topics: Animals; Arsenicals; Biomarkers; Cricetinae; Gallium; Indium; Kidney Tubules; Male; Mesocricetus; Porphyrins; Proteinuria; Proteomics; Semiconductors	2005
Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses. Journal of nanoscience and nanotechnology, 2005, Volume: 5, Issue:5 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Glass; Indium; Luminescence; Luminescent Measurements; Materials Testing; Molecular Conformation; Nanotubes; Particle Size; Phase Transition; Photochemistry; Semiconductors; Silicon Dioxide	2005
Engineering InAs(x)P(1-x)/InP/ZnSe III-V alloyed core/shell quantum dots for the near-infrared. Journal of the American Chemical Society, 2005, Aug-03, Volume: 127, Issue:30 Topics: Alloys; Animals; Arsenicals; Indium; Phosphines; Quantum Dots; Rats; Selenium Compounds; Sentinel Lymph Node Biopsy; Spectroscopy, Near-Infrared; X-Ray Diffraction; Zinc Compounds	2005
Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping. Nano letters, 2005, Volume: 5, Issue:8 Topics: Arsenicals; Crystallization; Indium; Materials Testing; Molecular Conformation; Nanostructures; Phase Transition; Phosphines; Quantum Dots	2005
Tunable double quantum dots in InAs nanowires defined by local gate electrodes. Nano letters, 2005, Volume: 5, Issue:7 Topics: Arsenicals; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Indium; Microelectrodes; Nanotechnology; Nanotubes; Particle Size; Quantum Dots; Semiconductors	2005
Three-dimensional nanoscale composition mapping of semiconductor nanowires. Nano letters, 2006, Volume: 6, Issue:2 Topics: Arsenicals; Catalysis; Gold; Indium; Microelectrodes; Nanotechnology; Nanotubes; Particle Size; Semiconductors; Sensitivity and Specificity; Surface Properties; Tomography	2006
Infrared photodetectors in heterostructure nanowires. Nano letters, 2006, Volume: 6, Issue:2 Topics: Arsenicals; Gold; Indium; Light; Nanotubes; Particle Size; Phosphorus; Photochemistry; Quantum Dots; Sensitivity and Specificity; Silicon Dioxide; Spectrophotometry, Infrared; Surface Properties	2006
Size series of small indium arsenide-zinc selenide core-shell nanocrystals and their application to in vivo imaging. Journal of the American Chemical Society, 2006, Mar-01, Volume: 128, Issue:8 Topics: Animals; Arsenicals; Blood Proteins; Cadmium; Diagnostic Imaging; Fluorescent Dyes; Indium; Microscopy, Electron, Transmission; Nanostructures; Polyethylene Glycols; Protein Binding; Quantum Dots; Rats; Selenium Compounds; Semiconductors; Sentinel Lymph Node Biopsy; Spectrometry, Fluorescence; Spectroscopy, Near-Infrared; Thioctic Acid; Zinc Compounds	2006
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires. Nano letters, 2006, Volume: 6, Issue:4 Topics: Arsenicals; Crystallization; Gallium; Indium; Light; Luminescent Measurements; Materials Testing; Molecular Conformation; Nanotubes; Optics and Photonics; Particle Size	2006
Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings. Nano letters, 2006, Volume: 6, Issue:4 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Crystallization; Elasticity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Models, Chemical; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Stress, Mechanical	2006
Au-free epitaxial growth of InAs nanowires. Nano letters, 2006, Volume: 6, Issue:8 Topics: Arsenicals; Crystallization; Electric Wiring; Gold; Indium; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size	2006
Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor. Nano letters, 2006, Volume: 6, Issue:9 Topics: Arsenicals; Computer Simulation; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Indium; Models, Chemical; Models, Molecular; Nanotechnology; Nanotubes; Transistors, Electronic	2006
Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains. Nano letters, 2006, Volume: 6, Issue:9 Topics: Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Nanotubes; Particle Size; Quantum Dots; Spectrum Analysis; Wettability	2006
Level structure of InAs quantum dots in two-dimensional assemblies. Nano letters, 2006, Volume: 6, Issue:10 Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Electron Transport; Indium; Materials Testing; Models, Chemical; Quantum Dots; Semiconductors	2006
Nanocrystalline TiO2 solar cells sensitized with InAs quantum dots. The journal of physical chemistry. B, 2006, Dec-21, Volume: 110, Issue:50 Topics: Arsenicals; Crystallization; Indium; Nanostructures; Particle Size; Photochemistry; Quantum Dots; Semiconductors; Sensitivity and Specificity; Surface Properties; Titanium	2006
Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber. Small (Weinheim an der Bergstrasse, Germany), 2006, Volume: 2, Issue:3 Topics: Arsenicals; Computer Simulation; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Microscopy, Electron, Scanning; Models, Chemical; Models, Molecular; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Surface Properties	2006
High electron mobility InAs nanowire field-effect transistors. Small (Weinheim an der Bergstrasse, Germany), 2007, Volume: 3, Issue:2 Topics: Arsenicals; Crystallization; Electrochemistry; Electron Transport; Equipment Design; Equipment Failure Analysis; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Nanotubes; Particle Size; Surface Properties; Transistors, Electronic	2007
Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxy. Small (Weinheim an der Bergstrasse, Germany), 2007, Volume: 3, Issue:2 Topics: Arsenicals; Crystallization; Indium; Macromolecular Substances; Materials Testing; Microfluidics; Molecular Conformation; Nanotechnology; Particle Size; Quantum Dots; Surface Properties	2007
Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field. Nano letters, 2007, Volume: 7, Issue:1 Topics: Arsenicals; Electromagnetic Fields; Gallium; Indium; Luminescence; Quantum Theory	2007
Theoretical study on controllability of quantum state energy in an InGaAs/GaAs quantum dot buried in InGaAs. Journal of nanoscience and nanotechnology, 2006, Volume: 6, Issue:12 Topics: Arsenicals; Computer Simulation; Dose-Response Relationship, Radiation; Gallium; Indium; Light; Linear Energy Transfer; Models, Chemical; Models, Molecular; Quantum Dots; Radiation Dosage; Semiconductors	2006
Growth and characterization of InP nanowires with InAsP insertions. Nano letters, 2007, Volume: 7, Issue:6 Topics: Arsenicals; Crystallization; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Phosphines; Surface Properties	2007
III-V nanowire growth mechanism: V/III ratio and temperature effects. Nano letters, 2007, Volume: 7, Issue:8 Topics: Arsenicals; Crystallization; Gold; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Surface Properties; Temperature	2007
Morphology and composition of InAs/GaAs quantum dots. Journal of nanoscience and nanotechnology, 2007, Volume: 7, Issue:6 Topics: Arsenicals; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Particle Size; Quantum Dots; Surface Properties	2007
Shear stress measurements on InAs nanowires by AFM manipulation. Small (Weinheim an der Bergstrasse, Germany), 2007, Volume: 3, Issue:8 Topics: Arsenicals; Crystallization; Elasticity; Electric Wiring; Indium; Macromolecular Substances; Materials Testing; Micromanipulation; Microscopy, Atomic Force; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Shear Strength; Stress, Mechanical; Surface Properties	2007
In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system. The Review of scientific instruments, 2007, Volume: 78, Issue:7 Topics: Arsenicals; Crystallization; Heavy Ions; Indium; Materials Testing; Nanotechnology; Particle Size; Quantum Dots; Specimen Handling	2007
Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer. Journal of nanoscience and nanotechnology, 2007, Volume: 7, Issue:8 Topics: Arsenicals; Crystallization; Gallium; Indium; Microscopy, Atomic Force; Nanoparticles; Nanotechnology; Quantum Dots; Temperature	2007
Scanned probe imaging of quantum dots inside InAs nanowires. Nano letters, 2007, Volume: 7, Issue:9 Topics: Arsenicals; Electron Transport; Indium; Materials Testing; Microscopy, Scanning Probe; Nanotechnology; Nanotubes; Particle Size; Quantum Dots	2007
Strong extinction of a far-field laser beam by a single quantum dot. Nano letters, 2007, Volume: 7, Issue:9 Topics: Arsenicals; Gallium; Indium; Lasers; Materials Testing; Nanotechnology; Quantum Dots	2007
Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques. Nano letters, 2007, Volume: 7, Issue:9 Topics: Arsenicals; Computer Simulation; Crystallization; Elasticity; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Phosphines; Stress, Mechanical; Surface Properties; X-Ray Diffraction	2007
Excess indium and substrate effects on the growth of InAs nanowires. Small (Weinheim an der Bergstrasse, Germany), 2007, Volume: 3, Issue:10 Topics: Arsenicals; Indium; Microscopy, Electron, Scanning; Nanoparticles; Nanowires	2007
InAs/InP radial nanowire heterostructures as high electron mobility devices. Nano letters, 2007, Volume: 7, Issue:10 Topics: Arsenicals; Computer Simulation; Crystallization; Electric Wiring; Electron Transport; Indium; Models, Chemical; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Phosphines	2007
Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths. Optics letters, 2007, Sep-15, Volume: 32, Issue:18 Topics: Arsenicals; Computer Simulation; Gallium; Indium; Light; Materials Testing; Models, Theoretical; Quantum Dots; Telecommunications	2007
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures. Small (Weinheim an der Bergstrasse, Germany), 2007, Volume: 3, Issue:11 Topics: Arsenicals; Computer Simulation; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Surface Properties	2007
Carrier multiplication in InAs nanocrystal quantum dots with an onset defined by the energy conservation limit. Nano letters, 2007, Volume: 7, Issue:11 Topics: Arsenicals; Catalysis; Colloids; Electrons; Indium; Metal Nanoparticles; Models, Theoretical; Nanoparticles; Nanostructures; Nanotechnology; Photochemistry; Quantum Dots; Semiconductors; Spectrophotometry; Time Factors	2007
Self-aligned charge read-out for InAs nanowire quantum dots. Nano letters, 2008, Volume: 8, Issue:2 Topics: Arsenicals; Electric Wiring; Electrochemistry; Equipment Design; Equipment Failure Analysis; Indium; Lighting; Molecular Conformation; Nanotechnology; Nanotubes; Quantum Dots; Static Electricity	2008
Direct observation of polarons in electron populated quantum dots by resonant Raman scattering. Journal of nanoscience and nanotechnology, 2008, Volume: 8, Issue:2 Topics: Arsenicals; Electrons; Gallium; Indium; Quantum Dots; Semiconductors; Spectrum Analysis, Raman	2008
The theoretical investigation of all-optical polarization switching based on InGaAs(P) Bragg-spaced quantum wells. Optics express, 2008, Jan-07, Volume: 16, Issue:1 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Models, Theoretical; Optics and Photonics; Quantum Dots; Quantum Theory; Refractometry; Signal Processing, Computer-Assisted	2008
Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Optics express, 2008, Jan-21, Volume: 16, Issue:2 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Quantum Dots; Temperature	2008
Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm. Optics express, 2008, Feb-04, Volume: 16, Issue:3 Topics: Amplifiers, Electronic; Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Optics and Photonics; Phosphines; Quantum Theory	2008
Electro-optic and electro-absorption characterization of InAs quantum dot waveguides. Optics express, 2008, Mar-03, Volume: 16, Issue:5 Topics: Arsenicals; Electronics; Electrons; Equipment Design; Equipment Failure Analysis; Indium; Light; Optics and Photonics; Quantum Dots; Scattering, Radiation	2008
Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon. Optics express, 2008, Mar-31, Volume: 16, Issue:7 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Fiber Optic Technology; Gallium; Hydrogen; Indium; Lasers, Semiconductor; Quantum Dots; Silicon; Systems Integration	2008
Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities. Optics express, 2008, Apr-14, Volume: 16, Issue:8 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Photons; Quality Control; Quantum Dots; Temperature	2008
1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation. Optics express, 2008, Apr-14, Volume: 16, Issue:8 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Models, Theoretical; Quantum Dots; Quantum Theory; Refractometry; Signal Processing, Computer-Assisted; Telecommunications	2008
High-speed all-optical modulation using an InGaAs/AlAsSb quantum well waveguide. Optics express, 2008, Jun-23, Volume: 16, Issue:13 Topics: Arsenicals; Computer Simulation; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Microwaves; Models, Theoretical; Optics and Photonics; Quantum Dots; Scattering, Radiation; Telecommunications	2008
High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy. Small (Weinheim an der Bergstrasse, Germany), 2008, Volume: 4, Issue:7 Topics: Arsenic; Arsenicals; Crystallization; Electrochemistry; Equipment Design; Indium; Metal Nanoparticles; Microscopy, Electron, Transmission; Nanotechnology; Nanowires; Tin	2008
Probe microscopy: Finding quantum dots inside nanowires. Nature nanotechnology, 2007, Volume: 2, Issue:10 Topics: Arsenicals; Electric Conductivity; Image Enhancement; Indium; Microscopy, Scanning Probe; Nanotechnology; Nanotubes; Quantum Dots	2007
Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates. Nature nanotechnology, 2007, Volume: 2, Issue:12 Topics: Arsenicals; Crystallization; Indium; Ions; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties	2007
Synthetic scheme for high-quality InAs nanocrystals based on self-focusing and one-pot synthesis of InAs-based core-shell nanocrystals. Angewandte Chemie (International ed. in English), 2008, Volume: 47, Issue:40 Topics: Arsenicals; Indium; Quantum Dots; Spectroscopy, Near-Infrared; Temperature	2008
Transport coefficients of InAs nanowires as a function of diameter. Small (Weinheim an der Bergstrasse, Germany), 2009, Volume: 5, Issue:1 Topics: Arsenicals; Indium; Nanotechnology; Nanowires; Particle Size	2009
Friction measurements of InAs nanowires on silicon nitride by AFM manipulation. Small (Weinheim an der Bergstrasse, Germany), 2009, Volume: 5, Issue:2 Topics: Arsenicals; Friction; Indium; Materials Testing; Metal Nanoparticles; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanoparticles; Nanotechnology; Nanowires; Silicon Compounds; Surface Properties; Temperature	2009
Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer. Optics express, 2008, Dec-08, Volume: 16, Issue:25 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Electronics; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Light; Models, Theoretical; Optical Devices; Scattering, Radiation; Transducers	2008
Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots. Nano letters, 2009, Volume: 9, Issue:1 Topics: Arsenicals; Computer Simulation; Crystallization; Indium; Luminescent Measurements; Magnetics; Models, Chemical; Nanostructures; Nanotechnology; Particle Size; Quantum Dots	2009
Diameter-dependent electron mobility of InAs nanowires. Nano letters, 2009, Volume: 9, Issue:1 Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Electron Transport; Indium; Models, Chemical; Models, Molecular; Nanostructures; Nanotechnology; Particle Size	2009
Evolution of epitaxial InAs nanowires on GaAs 111B. Small (Weinheim an der Bergstrasse, Germany), 2009, Volume: 5, Issue:3 Topics: Arsenicals; Gallium; Indium; Microscopy, Electron, Scanning; Nanowires	2009
Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy. ACS nano, 2008, Nov-25, Volume: 2, Issue:11 Topics: Arsenicals; Crystallization; Energy Transfer; Indium; Materials Testing; Microscopy, Atomic Force; Models, Chemical; Nanostructures; Nanotechnology; Photochemistry; Quantum Dots; Temperature; Wettability	2008
The scaling of the effective band gaps in indium-arsenide quantum dots and wires. ACS nano, 2008, Sep-23, Volume: 2, Issue:9 Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Surface Properties	2008
Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 microm using cavity-confined slow light. Optics express, 2009, Mar-30, Volume: 17, Issue:7 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Miniaturization; Phosphines; Photons; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Temperature	2009
1.5 GHz single-photon detection at telecommunication wavelengths using sinusoidally gated InGaAs/InP avalanche photodiode. Optics express, 2009, Apr-13, Volume: 17, Issue:8 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Microwaves; Phosphines; Photometry; Photons; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Telecommunications	2009
Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate. Optics express, 2009, Apr-27, Volume: 17, Issue:9 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Silicon; Temperature	2009
Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure. Optics express, 2009, May-25, Volume: 17, Issue:11 Topics: Arsenicals; Gallium; Indium; Light; Luminescent Measurements; Nanotechnology; Nanotubes; Photons; Refractometry; Scattering, Radiation	2009
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures. Nanotechnology, 2009, Jul-08, Volume: 20, Issue:27 Topics: Arsenicals; Gallium; Indium; Luminescence; Nanostructures; Photochemical Processes; Quantum Dots; Spectrum Analysis; Wettability	2009
Filling of hole arrays with InAs quantum dots. Nanotechnology, 2009, Jul-15, Volume: 20, Issue:28 Topics: Arsenicals; Gallium; Indium; Monte Carlo Method; Nanotechnology; Quantum Dots	2009
Growth of vertical InAs nanowires on heterostructured substrates. Nanotechnology, 2009, Jul-15, Volume: 20, Issue:28 Topics: Arsenicals; Gallium; Indium; Microscopy, Atomic Force; Microscopy, Electron, Transmission; Nanowires	2009
Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier. Optics express, 2008, Nov-10, Volume: 16, Issue:23 Topics: Amplifiers, Electronic; Arsenicals; Computer Communication Networks; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Microwaves; Optical Devices; Phosphines; Semiconductors; Signal Processing, Computer-Assisted	2008
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchange. Nano letters, 2009, Volume: 9, Issue:7 Topics: Arsenicals; Electrons; Indium; Quantum Dots; Semiconductors; Silicon	2009
An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses. Optics express, 2009, Aug-03, Volume: 17, Issue:16 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Light; Microwaves; Models, Theoretical; Phosphines; Quantum Dots; Scattering, Radiation; Semiconductors	2009
High-brightness single photon source from a quantum dot in a directional-emission nanocavity. Optics express, 2009, Aug-17, Volume: 17, Issue:17 Topics: Algorithms; Arsenicals; Equipment Design; Fiber Optic Technology; Gallium; Indium; Lasers; Luminescence; Microscopy, Electron, Scanning; Models, Statistical; Normal Distribution; Optics and Photonics; Photons; Poisson Distribution; Quantum Dots; Temperature	2009
Room temperature continuous wave operation in a photonic crystal microcavity laser with a single layer of InAs/InP self-assembled quantum wires. Optics express, 2009, Aug-17, Volume: 17, Issue:17 Topics: Arsenicals; Crystallization; Equipment Design; Indium; Lasers; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanostructures; Optics and Photonics; Phosphines; Photons; Quantum Dots; Quantum Theory; Surface Properties; Temperature	2009
Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy. Nanotechnology, 2009, Sep-16, Volume: 20, Issue:37 Topics: Arsenicals; Indium; Microscopy, Atomic Force; Nanotechnology; Quantum Dots; Spectrum Analysis	2009
InAs nanowire transistors as gas sensor and the response mechanism. Nano letters, 2009, Volume: 9, Issue:12 Topics: Arsenicals; Crystallization; Electric Conductivity; Electrochemistry; Equipment Design; Equipment Failure Analysis; Gases; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties; Transducers; Transistors, Electronic	2009
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths. Nanotechnology, 2009, Oct-14, Volume: 20, Issue:41 Topics: Arsenicals; Gallium; Indium; Quantum Dots	2009
Making Mn substitutional impurities in InAs using a scanning tunneling microscope. Nano letters, 2009, Volume: 9, Issue:12 Topics: Arsenicals; Crystallization; Indium; Macromolecular Substances; Manganese; Materials Testing; Micromanipulation; Microscopy, Scanning Tunneling; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties	2009
Thermal conductance of InAs nanowire composites. Nano letters, 2009, Volume: 9, Issue:12 Topics: Arsenicals; Crystallization; Indium; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Polymethyl Methacrylate; Surface Properties; Temperature; Thermal Conductivity	2009
Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers. Optics express, 2009, Oct-26, Volume: 17, Issue:22 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Phosphines; Refractometry; Reproducibility of Results; Sensitivity and Specificity	2009
Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers. Optics express, 2009, Oct-26, Volume: 17, Issue:22 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Miniaturization; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity	2009
Dynamic switching characteristics of InGaAsP/InP multimode interference optical waveguide switch. Optics express, 2009, Dec-21, Volume: 17, Issue:26 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Optical Devices; Phosphines; Refractometry; Signal Processing, Computer-Assisted	2009
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz. Nano letters, 2010, Mar-10, Volume: 10, Issue:3 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Materials Testing; Microwaves; Nanostructures; Nanotechnology; Particle Size; Transistors, Electronic	2010
Correlating the nanostructure and electronic properties of InAs nanowires. Nano letters, 2010, May-12, Volume: 10, Issue:5 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties; Transistors, Electronic	2010
Sensitivities of InGaAsP photonic crystal membrane nanocavities to hole refractive index. Optics express, 2010, Mar-01, Volume: 18, Issue:5 Topics: Arsenicals; Crystallization; Gallium; Indium; Luminescent Measurements; Membranes, Artificial; Nanostructures; Phosphorus Compounds; Photons; Refractometry	2010
A surface plasmon enhanced infrared photodetector based on InAs quantum dots. Nano letters, 2010, May-12, Volume: 10, Issue:5 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Infrared Rays; Light; Nanotechnology; Photometry; Quantum Dots; Surface Plasmon Resonance	2010
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors. Nanotechnology, 2010, May-21, Volume: 21, Issue:20 Topics: Arsenicals; Carbon; Chemistry, Organic; Crystallization; Electrochemistry; Indium; Materials Testing; Metal Nanoparticles; Metals; Nanotechnology; Nanowires; Organic Chemicals; Temperature	2010
Gas detection with vertical InAs nanowire arrays. Nano letters, 2010, Jul-14, Volume: 10, Issue:7 Topics: Arsenicals; Gases; Indium; Nanotechnology; Nanowires; Nitrogen Dioxide; Sensitivity and Specificity	2010
Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer. Optics express, 2010, May-10, Volume: 18, Issue:10 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Solid-State; Quantum Dots; Silicon	2010
Hybrid planar microresonators with organic and InGaAs active media. Optics express, 2010, May-24, Volume: 18, Issue:11 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Miniaturization; Optical Devices; Organic Chemicals; Transducers	2010
Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires. Small (Weinheim an der Bergstrasse, Germany), 2010, Sep-06, Volume: 6, Issue:17 Topics: Arsenicals; Catalysis; Indium; Microscopy, Electron, Scanning; Microscopy, Electron, Transmission; Nanotechnology; Nanowires; Palladium; Temperature	2010
Stray light characterization of an InGaAs anamorphic hyperspectral imager. Optics express, 2010, Aug-02, Volume: 18, Issue:16 Topics: Arsenicals; Equipment Design; Gallium; Image Enhancement; Indium; Light; Microscopy, Fluorescence; Optics and Photonics	2010
Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers. Optics express, 2010, Aug-30, Volume: 18, Issue:18 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Gallium; Indium; Lasers, Semiconductor; Light; Optics and Photonics; Quantum Dots; Semiconductors	2010
Designs for high-efficiency electrically pumped photonic nanowire single-photon sources. Optics express, 2010, Sep-27, Volume: 18, Issue:20 Topics: Arsenicals; Computer Simulation; Gallium; Indium; Lasers; Metals; Nanoparticles; Nanotechnology; Nanowires; Optics and Photonics; Particle Size; Photons; Polymers; Quantum Dots; Refractometry; Surface Properties	2010
Observation of Rabi splitting from surface plasmon coupled conduction state transitions in electrically excited InAs quantum dots. Nano letters, 2011, Feb-09, Volume: 11, Issue:2 Topics: Arsenicals; Electric Conductivity; Electromagnetic Fields; Equipment Design; Equipment Failure Analysis; Indium; Light; Luminescent Measurements; Quantum Dots; Scattering, Radiation; Surface Plasmon Resonance	2011
Time-dependent photon number discrimination of InGaAs/InP avalanche photodiode single-photon detector. Applied optics, 2011, Jan-01, Volume: 50, Issue:1 Topics: Arsenicals; Equipment Design; Gallium; Indium; Phosphines; Photometry; Photons; Semiconductors	2011
Enhancement of two photon processes in quantum dots embedded in subwavelength metallic gratings. Optics express, 2011, Jan-17, Volume: 19, Issue:2 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lighting; Microscopy, Fluorescence, Multiphoton; Quantum Dots; Refractometry	2011
Intact mammalian cell function on semiconductor nanowire arrays: new perspectives for cell-based biosensing. Small (Weinheim an der Bergstrasse, Germany), 2011, Mar-07, Volume: 7, Issue:5 Topics: Animals; Arsenicals; Biosensing Techniques; Ganglia, Spinal; Humans; Indium; Microscopy, Confocal; Nanowires; Neurons; Rats; Semiconductors; Structure-Activity Relationship	2011
Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signals. ACS nano, 2011, Mar-22, Volume: 5, Issue:3 Topics: Arsenicals; Electromagnetic Fields; Indium; Materials Testing; Nanostructures; Particle Size; Semiconductors; Signal Processing, Computer-Assisted	2011
Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot. Optics express, 2011, Feb-28, Volume: 19, Issue:5 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Photons; Quantum Dots	2011
Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces. Nanoscale, 2011, Volume: 3, Issue:4 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Infrared Rays; Lighting; Materials Testing; Particle Size; Quantum Dots; Refractometry	2011
Characterization of peptide adsorption on InAs using X-ray photoelectron spectroscopy. Langmuir : the ACS journal of surfaces and colloids, 2011, Apr-05, Volume: 27, Issue:7 Topics: Adsorption; Arsenicals; Indium; Microscopy, Atomic Force; Peptides; Photoelectron Spectroscopy; Surface Properties	2011
On the anomalous Stark effect in a thin disc-shaped quantum dot. Journal of physics. Condensed matter : an Institute of Physics journal, 2010, Sep-22, Volume: 22, Issue:37 Topics: Arsenicals; Electromagnetic Fields; Indium; Models, Chemical; Nanostructures; Particle Size; Quantum Dots; Quantum Theory	2010
Coherent electron-phonon coupling in tailored quantum systems. Nature communications, 2011, Volume: 2 Topics: Acoustics; Arsenicals; Electrons; Graphite; Indium; Mathematical Computing; Nanostructures; Nanotechnology; Nanowires; Particle Size; Quantum Dots; Temperature	2011
Comparative study of low temperature growth of InAs and InMnAs quantum dots. Nanotechnology, 2011, May-13, Volume: 22, Issue:19 Topics: Arsenic; Arsenicals; Cold Temperature; Diffusion; Indium; Kinetics; Manganese; Microscopy, Atomic Force; Nanotechnology; Quantum Dots	2011
Unit cell structure of crystal polytypes in InAs and InSb nanowires. Nano letters, 2011, Apr-13, Volume: 11, Issue:4 Topics: Antimony; Arsenicals; Computer Simulation; Indium; Models, Chemical; Models, Molecular; Nanostructures; Particle Size	2011
Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots. Nano letters, 2011, Apr-13, Volume: 11, Issue:4 Topics: Arsenicals; Electromagnetic Fields; Electrons; Indium; Materials Testing; Nanostructures; Particle Size; Phosphines; Quantum Dots	2011
Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs. Journal of nanoscience and nanotechnology, 2011, Volume: 11, Issue:3 Topics: Arsenicals; Computer Simulation; Energy Transfer; Gallium; Indium; Magnetics; Models, Chemical; Quantum Dots; Semiconductors	2011
Terahertz ionization of highly charged quantum posts in a perforated electron gas. Nano letters, 2012, Mar-14, Volume: 12, Issue:3 Topics: Absorption; Arsenicals; Computer Simulation; Electrons; Gases; Indium; Models, Chemical; Quantum Dots; Semiconductors; Static Electricity; Terahertz Radiation	2012
Effects of crystal phase mixing on the electrical properties of InAs nanowires. Nano letters, 2011, Jun-08, Volume: 11, Issue:6 Topics: Arsenicals; Electrons; Indium; Nanowires; Particle Size; Surface Properties	2011
Strong enhancement of solar cell efficiency due to quantum dots with built-in charge. Nano letters, 2011, Jun-08, Volume: 11, Issue:6 Topics: Arsenicals; Electric Power Supplies; Gallium; Indium; Quantum Dots; Solar Energy; Surface Properties	2011
InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination. Optics express, 2011, Apr-25, Volume: 19, Issue:9 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Phosphines; Photometry; Semiconductors	2011
n-InAs nanopyramids fully integrated into silicon. Nano letters, 2011, Jul-13, Volume: 11, Issue:7 Topics: Arsenicals; Indium; Nanostructures; Nanotechnology; Particle Size; Silicon; Silicon Dioxide; Surface Properties	2011
In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics. Nano letters, 2011, Nov-09, Volume: 11, Issue:11 Topics: Arsenicals; Electromagnetic Fields; Gallium; Indium; Light; Materials Testing; Nanostructures; Particle Size; Silicon	2011
Quantum confinement effects in nanoscale-thickness InAs membranes. Nano letters, 2011, Nov-09, Volume: 11, Issue:11 Topics: Arsenicals; Electron Transport; Indium; Materials Testing; Membranes, Artificial; Nanostructures; Particle Size	2011
Shape-controlled Au particles for InAs nanowire growth. Nano letters, 2012, Jan-11, Volume: 12, Issue:1 Topics: Arsenicals; Crystallization; Gold; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Surface Properties	2012
Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires. Nano letters, 2012, Mar-14, Volume: 12, Issue:3 Topics: Arsenicals; Computer Simulation; Electric Conductivity; Indium; Models, Chemical; Nanostructures; Particle Size; Semiconductors	2012
Field-driven all-optical wavelength converter using novel InGaAsP/InAlGaAs quantum wells. Optics express, 2011, Dec-19, Volume: 19, Issue:27 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Optical Devices; Phosphines; Quantum Dots; Signal Processing, Computer-Assisted; Telecommunications	2011
Complex characterization of short-pulse propagation through InAs/InP quantum-dash optical amplifiers: from the quasi-linear to the two-photon-dominated regime. Optics express, 2012, Jan-02, Volume: 20, Issue:1 Topics: Amplifiers, Electronic; Arsenicals; Computer Simulation; Indium; Light; Models, Chemical; Phosphines; Photons; Quantum Dots; Scattering, Radiation	2012
Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy. Nanotechnology, 2012, Mar-09, Volume: 23, Issue:9 Topics: Arsenicals; Computer Simulation; Crystallization; Gold; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties	2012
van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene. Nano letters, 2012, Mar-14, Volume: 12, Issue:3 Topics: Anisotropy; Arsenicals; Crystallization; Graphite; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Static Electricity; Surface Properties	2012
Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling. Journal of physics. Condensed matter : an Institute of Physics journal, 2012, Apr-04, Volume: 24, Issue:13 Topics: Arsenicals; Electrons; Gallium; Indium; Models, Chemical; Nanostructures; Nanotechnology; Nanowires; Semiconductors	2012
Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures. Journal of physics. Condensed matter : an Institute of Physics journal, 2012, Apr-11, Volume: 24, Issue:14 Topics: Anisotropy; Arsenicals; Computer Simulation; Electron Spin Resonance Spectroscopy; Gallium; Indium; Magnetic Fields; Quantum Dots; Spin Labels	2012
Extreme nonlinearities in InAs/InP nanowire gain media: the two-photon induced laser. Optics express, 2012, Mar-12, Volume: 20, Issue:6 Topics: Amplifiers, Electronic; Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Materials Testing; Nanotubes; Nonlinear Dynamics; Oscillometry; Phosphines; Photons	2012
Enhanced in and out-coupling of InGaAs slab waveguides by periodic metal slit arrays. Optics express, 2012, Mar-12, Volume: 20, Issue:6 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Refractometry; Surface Plasmon Resonance	2012
Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height. Optics letters, 2012, Mar-15, Volume: 37, Issue:6 Topics: Arsenicals; Indium; Light; Luminescent Measurements; Quantum Dots	2012
Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires. Optics express, 2012, Mar-26, Volume: 20, Issue:7 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Miniaturization; Nanoparticles; Phosphines; Surface Plasmon Resonance	2012
Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers. Optics express, 2012, Mar-26, Volume: 20, Issue:7 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Phosphines; Quantum Dots	2012
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. Nanotechnology, 2012, Apr-27, Volume: 23, Issue:16 Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Indium; Materials Testing; Models, Chemical; Molecular Conformation; Particle Size; Quantum Dots	2012
Strong tuning of Rashba spin-orbit interaction in single InAs nanowires. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Arsenicals; Computer Simulation; Indium; Models, Chemical; Nanostructures; Spin Labels	2012
Influence of surface scattering on the anomalous conductance plateaus in an asymmetrically biased InAs/In(0.52)Al(0.48)As quantum point contact. Nanotechnology, 2012, Jun-01, Volume: 23, Issue:21 Topics: Arsenicals; Computer Simulation; Electric Conductivity; Electromagnetic Fields; Indium; Models, Chemical; Nanostructures; Particle Size; Quantum Theory; Scattering, Radiation	2012
1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics express, 2012, May-07, Volume: 20, Issue:10 Topics: Absorption; Arsenicals; Germanium; Indium; Materials Testing; Microscopy, Electron, Transmission; Nanotechnology; Optics and Photonics; Photochemistry; Quantum Dots; Quantum Theory; Silicon; Surface Properties	2012
Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing. Optics express, 2012, May-07, Volume: 20, Issue:10 Topics: Aluminum; Arsenicals; Gallium; Indium; Infrared Rays; Light; Microscopy, Atomic Force; Nanotechnology; Optics and Photonics; Photochemistry; Quantum Dots; Temperature	2012
InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Arsenicals; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotubes; Particle Size; Quantum Dots; Surface Properties	2012
VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Arsenicals; Crystallization; Indium; Materials Testing; Nanotubes; Particle Size; Phosphines; Quantum Dots	2012
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability. Nanotechnology, 2012, Jun-15, Volume: 23, Issue:23 Topics: Arsenicals; Catalysis; Crystallization; Hot Temperature; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Surface Properties; Titanium	2012
Controlling the abruptness of axial heterojunctions in III-V nanowires: beyond the reservoir effect. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Arsenicals; Electrodes; Gallium; Indium; Materials Testing; Semiconductors; Surface Properties	2012
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip. Optics express, 2012, May-21, Volume: 20, Issue:11 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Infrared Rays; Light; Photometry; Refractometry; Scattering, Radiation; Semiconductors; Silicon; Surface Plasmon Resonance; Systems Integration	2012
Nanolasers grown on silicon-based MOSFETs. Optics express, 2012, May-21, Volume: 20, Issue:11 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Nanotechnology; Silicon; Transistors, Electronic	2012
Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure. Langmuir : the ACS journal of surfaces and colloids, 2012, Aug-14, Volume: 28, Issue:32 Topics: Arsenicals; Base Sequence; DNA Probes; DNA, Single-Stranded; Indium; Oxides; Photoelectron Spectroscopy; Surface Properties; X-Ray Absorption Spectroscopy	2012
Electrostatic spin control in InAs/InP nanowire quantum dots. Nano letters, 2012, Sep-12, Volume: 12, Issue:9 Topics: Arsenicals; Crystallization; Electroplating; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Phosphines; Quantum Dots; Surface Properties	2012
Cell membrane conformation at vertical nanowire array interface revealed by fluorescence imaging. Nanotechnology, 2012, Oct-19, Volume: 23, Issue:41 Topics: Arsenicals; Cell Membrane; HEK293 Cells; Humans; Indium; Microscopy, Confocal; Nanowires; Optical Imaging; Polyethyleneimine; Silanes; Tissue Array Analysis	2012
Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires. ACS nano, 2012, Oct-23, Volume: 6, Issue:10 Topics: Arsenicals; Crystallization; Electric Conductivity; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Refractometry; Surface Properties	2012
High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability. Optics letters, 2012, Oct-01, Volume: 37, Issue:19 Topics: Arsenicals; Gallium; Indium; Lasers; Quantum Dots; Temperature	2012
Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium. Nano letters, 2012, Nov-14, Volume: 12, Issue:11 Topics: Arsenicals; Catalysis; Indium; Materials Testing; Metals; Microscopy, Electron, Scanning; Nanowires; Palladium; Particle Size; Semiconductors; Surface Properties; Temperature; Zinc	2012
Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation. Optics express, 2012, Aug-27, Volume: 20, Issue:18 Topics: Arsenicals; Gallium; Indium; Ions; Materials Testing; Phosphines	2012
Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy. Optics express, 2012, Aug-27, Volume: 20, Issue:18 Topics: Aluminum; Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Solid-State; Phase Transition; Plasma Gases	2012
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities. Optics express, 2012, Sep-24, Volume: 20, Issue:20 Topics: Arsenicals; Crystallization; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Materials Testing; Quantum Dots; Silicon	2012
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy. Optics express, 2012, Aug-13, Volume: 20, Issue:17 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Heavy Ions; Indium; Materials Testing; Phosphines; Photometry; Semiconductors	2012
Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates. ACS nano, 2012, Nov-27, Volume: 6, Issue:11 Topics: Arsenicals; Computer Simulation; Elastic Modulus; Indium; Materials Testing; Membranes, Artificial; Models, Chemical; Models, Molecular; Nanostructures; Silicon; Tensile Strength	2012
Room-temperature electron spin amplifier based on Ga(In)NAs alloys. Advanced materials (Deerfield Beach, Fla.), 2013, Feb-06, Volume: 25, Issue:5 Topics: Alloys; Amplifiers, Electronic; Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Semiconductors; Spin Labels; Temperature	2013
Ion exchange synthesis of III-V nanocrystals. Journal of the American Chemical Society, 2012, Dec-12, Volume: 134, Issue:49 Topics: Arsenicals; Cadmium; Gallium; Indium; Ions; Nanoparticles; Phosphorus	2012
Improved precursor chemistry for the synthesis of III-V quantum dots. Journal of the American Chemical Society, 2012, Dec-19, Volume: 134, Issue:50 Topics: Arsenicals; Indium; Magnetic Resonance Spectroscopy; Quantum Dots	2012
Ballistic InAs nanowire transistors. Nano letters, 2013, Feb-13, Volume: 13, Issue:2 Topics: Arsenicals; Indium; Nanowires; Temperature; Transistors, Electronic	2013
III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar photoresponse. Journal of the American Chemical Society, 2013, Jan-30, Volume: 135, Issue:4 Topics: Arsenicals; Chalcogens; Electrons; Indium; Ligands; Nanoparticles; Phosphines; Photochemical Processes	2013
Minimization of the contact resistance between InAs nanowires and metallic contacts. Nanotechnology, 2013, Feb-01, Volume: 24, Issue:4 Topics: Arsenicals; Electric Conductivity; Electrodes; Heavy Ions; Indium; Materials Testing; Metal Nanoparticles; Surface Properties	2013
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells. Optics express, 2013, Jan-14, Volume: 21 Suppl 1 Topics: Arsenicals; Electric Power Supplies; Equipment Design; Gallium; Indium; Materials Testing; Pancreatitis-Associated Proteins; Refractometry; Solar Energy; Sunlight; Surface Plasmon Resonance	2013
Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors. Nano letters, 2013, Apr-10, Volume: 13, Issue:4 Topics: Arsenicals; Indium; Light; Nanowires; Particle Size; Photochemistry; Silicon; Surface Properties	2013
Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire. Nano letters, 2013, Apr-10, Volume: 13, Issue:4 Topics: Arsenicals; Equipment Design; Gallium; Indium; Nanostructures; Nanotechnology; Nanowires; Quantum Dots; Silicon	2013
Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression. Optics express, 2013, Mar-25, Volume: 21, Issue:6 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Quantum Theory	2013
Temperature dependence of impact ionization in InAs. Optics express, 2013, Apr-08, Volume: 21, Issue:7 Topics: Arsenicals; Computer Simulation; Electromagnetic Fields; Indium; Ions; Models, Chemical; Semiconductors; Temperature	2013
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy. Nanotechnology, 2013, May-31, Volume: 24, Issue:21 Topics: Arsenicals; Electric Conductivity; Gallium; Indium; Materials Testing; Nanowires; Particle Size; Phosphines; Radiation Dosage; Semiconductors; Terahertz Radiation; Terahertz Spectroscopy	2013
Large area photoconductive terahertz emitter for 1.55 μm excitation based on an InGaAs heterostructure. Nanotechnology, 2013, May-31, Volume: 24, Issue:21 Topics: Arsenicals; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Lighting; Materials Testing; Nanoparticles; Nanotechnology; Surface Properties; Terahertz Radiation	2013
Quantum of optical absorption in two-dimensional semiconductors. Proceedings of the National Academy of Sciences of the United States of America, 2013, Jul-16, Volume: 110, Issue:29 Topics: Absorption; Arsenicals; Indium; Light; Models, Chemical; Nanostructures; Quantum Theory; Semiconductors; Spectroscopy, Fourier Transform Infrared	2013
Indium diffusion and native oxide removal during the atomic layer deposition (ALD) of TiO2 films on InAs(100) surfaces. ACS applied materials & interfaces, 2013, Aug-28, Volume: 5, Issue:16 Topics: Arsenicals; Diffusion; Indium; Microscopy, Atomic Force; Organic Chemicals; Photoelectron Spectroscopy; Surface Properties; Titanium; Water	2013
Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes. Optics express, 2013, Jul-15, Volume: 21, Issue:14 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Phosphines; Photometry; Refractometry; Semiconductors	2013
Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths. Nano letters, 2013, Oct-09, Volume: 13, Issue:10 Topics: Anisotropy; Arsenicals; Crystallization; Gallium; Indium; Nanotechnology; Particle Size; Quantum Dots	2013
Vertical nanowire arrays as a versatile platform for protein detection and analysis. Nanoscale, 2013, Nov-07, Volume: 5, Issue:21 Topics: Animals; Arsenicals; Biotin; Cattle; Fluorescent Dyes; Immobilized Proteins; Immunoassay; Indium; Maleimides; Nanowires; Nickel; Nitrilotriacetic Acid; Protein Array Analysis; Proteins; Serum Albumin; Streptavidin	2013
Tuning InAs nanowire density for HEK293 cell viability, adhesion, and morphology: perspectives for nanowire-based biosensors. ACS applied materials & interfaces, 2013, Nov-13, Volume: 5, Issue:21 Topics: Arsenicals; Biosensing Techniques; Cell Adhesion; Cell Survival; HEK293 Cells; Humans; Indium; Nanowires; Surface Properties	2013
Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs. Advanced materials (Deerfield Beach, Fla.), 2013, Dec-17, Volume: 25, Issue:47 Topics: Arsenicals; Crystallization; Graphite; Indium; Nanostructures; Nanowires; Particle Size; Static Electricity	2013
Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique. Nano letters, 2013, Volume: 13, Issue:12 Topics: Arsenicals; Indium; Nanotechnology; Nanowires; Silicon; Surface Properties; Zinc	2013
Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors. Nano letters, 2013, Volume: 13, Issue:12 Topics: Arsenicals; Electrons; Graphite; Indium; Nanostructures; Nanowires; Semiconductors; Silicon; Transistors, Electronic	2013
Dynamic process of phase transition from wurtzite to zinc blende structure in InAs nanowires. Nano letters, 2013, Volume: 13, Issue:12 Topics: Arsenicals; Indium; Nanowires; Phase Transition; Semiconductors; Surface Properties; Zinc	2013
Enhanced luminescence properties of InAs-InAsP core-shell nanowires. Nano letters, 2013, Volume: 13, Issue:12 Topics: Arsenicals; Indium; Luminescence; Nanoshells; Nanostructures; Nanowires; Silicon; Surface Properties	2013
InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning. Nano letters, 2013, Volume: 13, Issue:12 Topics: Arsenicals; Crystallization; Gallium; Indium; Methacrylates; Microscopy, Electron, Transmission; Nanowires; Polymers; Polystyrenes	2013
InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate. Optics express, 2014, Sep-22, Volume: 22, Issue:19 Topics: Arsenicals; Equipment Design; Gallium; Indium; Light; Nanotechnology; Quantum Dots	2014
Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures. Nano letters, 2015, Jan-14, Volume: 15, Issue:1 Topics: Arsenicals; Biosensing Techniques; Fluorescence; Indium; Light; Nanowires	2015
Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application. Optics letters, 2015, Jan-01, Volume: 40, Issue:1 Topics: Antimony; Arsenicals; Humans; Indium; Infrared Rays; Optical Imaging; Optical Phenomena; Temperature; Veins	2015
Simultaneous integration of different nanowires on single textured Si (100) substrates. Nano letters, 2015, Mar-11, Volume: 15, Issue:3 Topics: Adsorption; Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Nanocomposites; Nanowires; Particle Size; Silicon; Surface Properties; Systems Integration	2015
574-647 nm wavelength tuning by second-harmonic generation from diode-pumped PPKTP waveguides. Optics letters, 2015, Mar-01, Volume: 40, Issue:5 Topics: Arsenicals; Gallium; Indium; Lasers, Semiconductor; Phosphates; Quantum Dots; Titanium	2015
Pressure dependence of Raman spectrum in InAs nanowires. Journal of physics. Condensed matter : an Institute of Physics journal, 2014, Jun-11, Volume: 26, Issue:23 Topics: Arsenicals; Crystallization; Indium; Models, Chemical; Nanowires; Phase Transition; Phonons; Pressure; Spectrum Analysis, Raman; Surface Properties	2014
Lasing characteristics of InP-based InAs quantum dots depending on InGaAsP waveguide conditions. Journal of nanoscience and nanotechnology, 2014, Volume: 14, Issue:12 Topics: Arsenicals; Indium; Quantum Dots	2014
From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires. Nano letters, 2016, Jan-13, Volume: 16, Issue:1 Topics: Arsenicals; Catalysis; Electrons; Indium; Nanostructures; Nanotechnology; Nanowires; Semiconductors; Surface Properties	2016
Towards automated spectroscopic tissue classification in thyroid and parathyroid surgery. The international journal of medical robotics + computer assisted surgery : MRCAS, 2017, Volume: 13, Issue:1 Topics: Adipose Tissue; Adolescent; Adult; Aged; Arsenicals; Automation; Calibration; Electronic Data Processing; Equipment Design; Female; Gallium; Humans; Indium; Male; Middle Aged; Parathyroid Glands; Regression Analysis; Silicon; Spectrophotometry; Spectrum Analysis; Thyroid Gland; Young Adult	2017
Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared. Nature communications, 2016, 11-11, Volume: 7 Topics: Animals; Arsenicals; Brain; Indium; Infrared Rays; Metal Nanoparticles; Mice; Optical Imaging; Quantum Dots	2016
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry. Nano letters, 2017, 02-08, Volume: 17, Issue:2 Topics: Arsenicals; Electric Conductivity; Electronics; Electrons; Equipment and Supplies; Gallium; Indium; Nanowires; Particle Size; Polyethylene Glycols; Protons; Semiconductors	2017
Understanding Self-Catalyzed Epitaxial Growth of III-V Nanowires toward Controlled Synthesis. Nano letters, 2017, 02-08, Volume: 17, Issue:2 Topics: Antimony; Arsenicals; Catalysis; Gallium; Indium; Nanowires; Particle Size; Semiconductors; Surface Properties	2017
Ecotoxicity assessment of ionic As(III), As(V), In(III) and Ga(III) species potentially released from novel III-V semiconductor materials. Ecotoxicology and environmental safety, 2017, Volume: 140 Topics: Aliivibrio fischeri; Animals; Arsenates; Arsenicals; Arsenites; Biological Assay; Daphnia; Ecotoxicology; Gallium; Indium; Ions; Semiconductors; Toxicity Tests, Acute	2017
Single Nanocrystal Spectroscopy of Shortwave Infrared Emitters. ACS nano, 2019, 02-26, Volume: 13, Issue:2 Topics: Arsenicals; Cadmium Compounds; Indium; Infrared Rays; Nanoparticles; Selenium Compounds; Spectrophotometry, Infrared	2019
Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances. Molecules (Basel, Switzerland), 2019, Sep-06, Volume: 24, Issue:18 Topics: Arsenicals; Density Functional Theory; Electric Conductivity; Indium; Nanowires; Particle Size; Phosphorus; Surface Properties	2019
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles. Journal of environmental science and health. Part A, Toxic/hazardous substances & environmental engineering, 2020, Volume: 55, Issue:2 Topics: Aliivibrio fischeri; Arsenicals; Gallium; Indium; Methane; Nanoparticles; Particle Size; Semiconductors; Sewage; Surface Properties; Water Pollutants, Chemical; Water Purification	2020
Thermoelectric Properties of InA Nanowires from Full-Band Atomistic Simulations. Molecules (Basel, Switzerland), 2020, Nov-16, Volume: 25, Issue:22 Topics: Arsenicals; Calibration; Computer Simulation; Electric Conductivity; Electronics; Indium; Nanowires; Phonons; Thermal Conductivity	2020
Ultra-Confined Visible-Light-Emitting Colloidal Indium Arsenide Quantum Dots. Nano letters, 2021, 06-23, Volume: 21, Issue:12 Topics: Arsenicals; Indium; Luminescence; Quantum Dots	2021
Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure. Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2023, Volume: 10, Issue:18 Topics: Indium; Oxides; Quantum Dots; Zinc	2023