Page last updated: 2024-08-26

indium and gallium arsenide

indium has been researched along with gallium arsenide in 106 studies

Research

Studies (106)

Timeframe	Studies, this research(%)	All Research%
pre-1990	0 (0.00)	18.7374
1990's	3 (2.83)	18.2507
2000's	45 (42.45)	29.6817
2010's	57 (53.77)	24.3611
2020's	1 (0.94)	2.80

Authors

Authors	Studies
Gotoh, K; Hirata, M; Inoue, N; Ishinishi, N; Makita, Y; Omura, M; Tanaka, A; Zhao, M	2
Erata, T; Kita, E; Nakamura, H; Takeuchi, J; Tasaki, A; Yamada, H	1
Gotoh, K; Hirata, M; Inoue, N; Makita, Y; Omura, M; Tanaka, A; Yamazaki, K; Zhao, M	1
Gerthsen, D; Kruse, P; Rosenauer, A	1
Dal Savio, C; Danzebrink, HU; Güttler, B; Kazantsev, DV; Pierz, K	1
Jagadish, C; Liu, XQ; Lu, W; Shen, SC; Tan, HH; Zou, J	1
Akaogi, T; Tanaka, M; Terauchi, M; Tsuda, K	1
Tanaka, A	1
Alivisatos, AP; Ho, M; Hughes, SM; Konkar, A; Lu, S; Madhukar, A; Zhang, Y	1
Alivisatos, AP; Hughes, SM; Konkar, A; Lu, S; Madhukar, A	1
Conner, EA; Fowler, BA; Yamauchi, H	1
Aizawa, M; Buriak, JM	1
Gao, Q; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Suvorova, AA; Tan, HH; Zou, J	1
Bell, DJ; Dong, L; Golling, M; Grützmacher, D; Nelson, BJ; Zhang, L	1
Liang, B; Salamo, GJ; Shih, CK; Wang, X; Wang, ZM	1
Djie, HS; Fang, XM; Fastenau, JM; Hopkinson, M; Liu, WK; Ooi, BS; Wu, Y	1
Arakawa, Y; Bell, GR; Honma, T; Ishii, A; Tsukamoto, S	1
Aizawa, M; Buriak, JM; Hormozi Nezhad, MR; Porter, LA; Ribbe, AE	1
Holtz, PO; Karlsson, KF; Larsson, M; Monemar, B; Moskalenko, ES; Petroff, PM; Schoenfeld, WV	1
Mukai, K; Nakashima, K	1
Biasiol, G; Carlino, E; Golinelli, GB; Grillo, V; Guo, FZ; Heun, S; Locatelli, A; Mentes, TO; Sorba, L	1
Ahmad, I; Avrutin, V; Baski, AA; Moore, JC; Morkoç, H	1
Atatüre, M; Badolato, A; Dreiser, J; Goldberg, BB; Imamoglu, A; Swan, AK; Unlü, MS; Vamivakas, AN; Yilmaz, ST	1
Alloing, B; Balet, L; Chauvin, N; Fiore, A; Gérard, JM; Gilet, P; Grenouillet, L; Li, L; Olivier, N; Tchelnokov, A; Terrier, M; Zinoni, C	1
Auchterlonie, GJ; Gao, Q; Guo, YN; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Tan, HH; Zou, J	1
Aslan, B; Hawrylak, P; Korkusinski, M; Liu, HC; Lockwood, DJ	1
Chen, Z; Li, G; Wang, T	1
Attaluri, RS; Averitt, RD; Krishna, S; Prasankumar, RP; Rotella, P; Stintz, AD; Taylor, AJ; Urayama, J; Weisse-Bernstein, N	1
Bhattacharya, P; Yang, J	1
Cade, NI; Ding, D; Gotoh, H; Johnson, SR; Kamada, H; Kuramochi, E; Notomi, M; Sogawa, T; Tanabe, T; Tawara, T; Zhang, YH	1
Fischer, M; Forchel, A; Gerschütz, F; Höfling, S; Kaiser, W; Koeth, J; Kovsh, A; Krestnikov, I; Schilling, C	1
Abedin, KS; Akimoto, R; Ishikawa, H; Lu, GW; Miyazaki, T	1
Coldren, LA; Dummer, MM; Klamkin, J; Raring, JR; Tauke-Pedretti, A	1
Gao, Q; Guo, Y; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Tan, HH; Wang, Y; Zhang, X; Zou, J	1
Dwir, B; Felici, M; Gallo, P; Kapon, E; Mohan, A; Rudra, A	1
Arakawa, Y; Guimard, D; Iwamoto, S; Nomura, M; Tanabe, K	1
Chen, P; Fukui, T; Geng, MM; Jia, LX; Liu, YL; Motohisa, J; Yang, L; Zhang, L	1
Franchi, S; Frigeri, P; Geddo, M; Guizzetti, G; Seravalli, L; Trevisi, G	1
Lee, JY; McKay, H; Millunchick, JM; Noordhoek, MJ; Smereka, P	1
Biasiol, G; Bocchi, C; Caroff, P; Fröberg, L; Nilsson, K; Roddaro, S; Rossi, F; Samuelson, L; Sorba, L; Wagner, JB; Wernersson, LE	1
Englund, D; Faraon, A; Toishi, M; Vucković, J	1
Bussadori, SK; Fernandes, KP; Ferrari, RA; Ferreira, MP; Gonzalez, DA; Gravalos, ED; Martins, MD	1
Franchi, S; Frigeri, P; Seravalli, L; Trevisi, G	1
Li, F; Mi, Z; Vicknesh, S	1
Brown, ER; Gossard, AC; Lu, H; Singh, RS; Suen, JY; Taylor, ZD; Williams, KK	1
Li, F; Mi, Z	1
Brouckaert, J; He, S; Liu, L; Sheng, Z; Van Thourhout, D	1
Arakawa, Y; Bordel, D; Guimard, D; Iwamoto, S; Tanabe, K	1
Barea, LA; Camposeo, A; Del Carro, P; Frateschi, NC; Mialichi, JR; Persano, L; Pisignano, D	1
Fu, L; Jagadish, C; Jolley, G; Tan, HH	1
Brown, SW; Kehoe, M; Lin, M; Lykke, KR; Moon, T; Smith, C; Swanson, R	1
Cataluna, MA; Fedorova, KA; Krestnikov, I; Livshits, D; Rafailov, EU	1
Claudon, J; Gérard, JM; Gregersen, N; Mørk, J; Nielsen, TR	1
Huang, M; Jokerst, NM; Kirch, J; Mawst, L; Palit, S	1
Coldren, LA; Kim, B; Krishnamachari, U; Nicholes, SC; Norberg, EJ; Parker, JS	1
Amemiya, T; Arai, S; Atsumi, Y; Ito, H; Kang, J; Koguchi, T; Nishiyama, N; Okumura, T; Osabe, R; Shindo, T; Takahashi, D	1
Coleman, JJ; Dias, NL; Garg, A; Mirin, RP; Silverman, KL; Stevens, MJ; Verma, VB	1
Dorogan, VG; Li, S; Mazur, YI; Salamo, GJ; Wang, ZM; Wu, J	1
Arbiol, J; Fontcuberta i Morral, A; Heiss, M; Ketterer, B; Morante, JR; Uccelli, E	1
Kulbachinskii, VA; Shchurova, LY	1
Little, JW; Mitin, V; Reinhardt, K; Sablon, KA; Sergeev, A; Vagidov, N	1
Huffaker, DL; Liang, BL; Lin, A; Scofield, AC; Shapiro, JN; Williams, AD; Wong, PS	1
Liu, J; Liu, W; Qin, L; Tang, Q; Wu, RH; Yuan, X; Zhang, D; Zhang, H; Zhang, Y; Zhao, Y	1
Bianucci, P; Kirk, AG; Mi, Z; Mukherjee, S; Plant, DV; Tian, Z; Veerasubramanian, V	1
Arepalli, S; Bachilo, SM; Ghosh, S; Rocha, JD; Weisman, RB	1
Hu, H; Kim, KH; Li, X; Ning, CZ; Rogers, JA; Shin, JC; Yin, L; Yu, KJ; Zuo, JM	1
Buchanan, M; Dudek, R; Haffouz, S; Hinds, S; Laframboise, S; Liu, HC; Wasilewski, Z	1
Chiu, YJ; Wu, JP; Wu, TH	1
Čukarić, N; Partoens, B; Peeters, FM; Ravi Kishore, VV; Tadić, M	1
Beyer, J; Buyanova, IA; Chen, WM; Suraprapapich, S; Tu, CW; Wang, PH	1
Ahn, KJ; Choi, JH; Han, WS; Kim, JH; Kim, SH; Lee, CM; Sim, SB; Yee, KJ	1
Huang, Y; Lee, J; Liu, Z; Meitl, M; Rogers, JA; Ryu, JH; Wu, J; Zhang, YW	1
Hsu, WC; Lee, CP; Ling, HS; Wang, SY	1
Ahn, B; Dapkus, PD; Lin, YT; Nutt, SR; O'Brien, JD; Sarkissian, R; Stewart, LS; Yeh, TW	1
Bolinsson, J; Borg, BM; Dick, KA; Johansson, J	1
Cerutti, L; Gassenq, A; Hattasan, N; Rodriguez, JB; Roelkens, G; Tournié, E	1
Chang-Hasnain, C; Chen, R; Ko, WS; Lu, F; Ng, KW; Tran, TT	1
Fang, M; Han, N; Ho, JC; Hou, JJ; Hung, TF; Lin, H; Wang, F; Xiu, F; Yip, S	1
Cao, Y; Gu, Y; Ji, H; Ma, W; Xu, P; Yang, T	1
Coldren, LA; Norberg, E; Parker, JS; Sivananthan, A	1
Edamura, T; Fujita, K; Furuta, S; Klimeck, G; Kubis, T; Tanaka, K; Yamanishi, M	1
Jiang, Q; Lee, A; Liu, H; Seeds, A; Tang, M	1
Liu, CP; Liu, H; Natrella, M; Renaud, CC; Rouvalis, E; Seeds, AJ	1
Buyanova, IA; Chen, WM; Geelhaar, L; Ptak, AJ; Puttisong, Y; Riechert, H; Tu, CW	1
Alivisatos, AP; Beberwyck, BJ	1
Baranowski, M; Harris, JS; Kudrawiec, R; Latkowska, M; Misiewicz, J; Sarmiento, T; Syperek, M	1
Chiu, CH; Chou, CL; Chou, WC; Jian, HT; Kuo, HC; Lin, JY; Shen, JL; Shu, GW; Wang, SC; Wu, CH	1
He, JF; He, Y; He, YM; Li, MF; Lu, CY; Ni, HQ; Niu, ZC; Shang, XJ; Wang, GW; Wang, J; Wang, LJ; Wei, YJ; Yu, Y; Zha, GW	1
Akiyama, H; Chen, S; Ito, T; Mochizuki, T; Yokoyama, H; Yoshita, M	1
Docherty, CJ; Gao, Q; Herz, LM; Jagadish, C; Johnston, MB; Joyce, HJ; Lloyd-Hughes, J; Tan, HH	1
Dietz, RJ; Helm, M; Künzel, H; Mittendorff, M; Sartorius, B; Schneider, H; Winnerl, S; Xu, M	1
Campbell, J; Itzler, MA; Jiang, X; Lu, Z; Sun, W; Zhou, Q	1
Bracker, AS; Brereton, PG; Carter, SG; Gammon, D; Kim, CS; Kim, M; Park, D; Sweeney, TM; Vora, PM; Yakes, MK; Yang, L	1
Chang-Hasnain, CJ; Chen, R; Ko, WS; Lu, F; Ng, KW; Tran, TT	1
Dai, Y; Forbes, D; Guo, W; Huang, Y; Hubbard, SM; Kim, TW; Kuech, TF; Mawst, LJ; Nealey, PF; Nesnidal, M; Wang, Z; Xiong, S	1
Chen, S; Jiang, Q; Liu, H; Seeds, A; Tang, M; Wu, J	1
Grützmacher, D; Lepsa, MI; Mussler, G; Rieger, T; Rosenbach, D; Schäpers, T	1
Alic, L; Beets, GL; Breukink, SO; Schols, RM; Stassen, LP; Wieringa, FP	1
Battle, PR; Fedorova, KA; Livshits, DA; Rafailov, EU; Sokolovskii, GS	1
Alic, L; Bouvy, ND; Schols, RM; Stassen, LP; Wieringa, FP	1
Danner, A; Huang, J; Tung, KH	1
Burke, AM; Carrad, DJ; Jagadish, C; Joyce, HJ; Krogstrup, P; Meredith, P; Micolich, AP; Mostert, AB; Nygård, J; Tan, HH; Ullah, AR	1
Field, JA; Gonzalez-Alvarez, A; Orenstein, E; Shadman, F; Sierra-Alvarez, R; Zeng, C	1
Field, JA; Nguyen, CH; Sierra-Alvarez, R	1

Reviews

1 review(s) available for indium and gallium arsenide

Article	Year
Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide. Toxicology and applied pharmacology, 2004, Aug-01, Volume: 198, Issue:3 Topics: Aluminum Compounds; Animals; Arsenic Poisoning; Arsenicals; Female; Gallium; Humans; Indium; Lung Diseases; Male; Occupational Exposure; Semiconductors	2004

Other Studies

105 other study(ies) available for indium and gallium arsenide

Article	Year
Testicular toxicity of gallium arsenide, indium arsenide, and arsenic oxide in rats by repetitive intratracheal instillation. Fundamental and applied toxicology : official journal of the Society of Toxicology, 1996, Volume: 32, Issue:1 Topics: Animals; Arsenic Poisoning; Arsenic Trioxide; Arsenicals; Gallium; Indium; Male; Organ Size; Oxides; Rats; Rats, Wistar; Sperm Count; Spermatozoa; Testis	1996
Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters. Toxicology letters, 1996, Dec-16, Volume: 89, Issue:2 Topics: Animals; Arsenic; Arsenic Poisoning; Arsenicals; Body Weight; Cricetinae; Epididymis; Gallium; Indium; Intubation, Intratracheal; Male; Organ Size; Sperm Count; Spermatids; Testis	1996
Quadrupolar nutation NMR on a compound semiconductor gallium-arsenide. Solid state nuclear magnetic resonance, 1997, Volume: 8, Issue:2 Topics: Arsenicals; Computer Simulation; Crystallography; Electrochemistry; Gallium; Indium; Magnetic Resonance Spectroscopy; Models, Chemical; Molecular Conformation; Semiconductors	1997
Comparative study of the toxic effects of gallium arsenide, indium arsenide and arsenic trioxide following intratracheal instillations to the lung of Syrian golden hamsters. Fukuoka igaku zasshi = Hukuoka acta medica, 2000, Volume: 91, Issue:1 Topics: Animals; Arsenic Trioxide; Arsenicals; Body Weight; Cricetinae; Gallium; Indium; Instillation, Drug; Kidney Tubules; Lung; Male; Mesocricetus; Organ Size; Oxides; Trachea	2000
Determination of the mean inner potential in III-V semiconductors by electron holography. Ultramicroscopy, 2003, Volume: 96, Issue:1 Topics: Algorithms; Arsenicals; Gallium; Holography; Indium; Microscopy, Electron; Neutron Diffraction; Phosphines; Semiconductors	2003
Low-temperature scanning system for near- and far-field optical investigations. Journal of microscopy, 2003, Volume: 209, Issue:Pt 3 Topics: Arsenicals; Cold Temperature; Gallium; Helium; Indium; Light; Microscopy, Confocal; Microscopy, Scanning Probe; Models, Structural; Spectrometry, Fluorescence; Spectrum Analysis	2003
Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures. Journal of nanoscience and nanotechnology, 2001, Volume: 1, Issue:4 Topics: Aluminum; Arsenicals; Crystallization; Electric Wiring; Gallium; Indium; Ions; Luminescence; Molecular Conformation; Nanotechnology; Photochemistry; Semiconductors; Temperature; Volatilization	2001
Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED. Journal of electron microscopy, 2004, Volume: 53, Issue:1 Topics: Arsenicals; Crystallization; Crystallography; Gallium; Indium; Microscopy, Electron; Semiconductors	2004
Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior. Nano letters, 2005, Volume: 5, Issue:3 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Optics and Photonics; Particle Size; Quantum Dots; Semiconductors; Systems Integration	2005
Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy. Nano letters, 2005, Volume: 5, Issue:5 Topics: Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Microscopy, Electron, Transmission; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Semiconductors	2005
Metabolomic and proteomic biomarkers for III-V semiconductors: chemical-specific porphyrinurias and proteinurias. Toxicology and applied pharmacology, 2005, Aug-07, Volume: 206, Issue:2 Topics: Animals; Arsenicals; Biomarkers; Cricetinae; Gallium; Indium; Kidney Tubules; Male; Mesocricetus; Porphyrins; Proteinuria; Proteomics; Semiconductors	2005
Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces. Journal of the American Chemical Society, 2005, Jun-29, Volume: 127, Issue:25 Topics: Arsenicals; Gallium; Germanium; Indium; Molecular Structure; Nanostructures; Phosphines; Polymers; Semiconductors; Silicon; Surface Properties	2005
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires. Nano letters, 2006, Volume: 6, Issue:4 Topics: Arsenicals; Crystallization; Gallium; Indium; Light; Luminescent Measurements; Materials Testing; Molecular Conformation; Nanotubes; Optics and Photonics; Particle Size	2006
Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings. Nano letters, 2006, Volume: 6, Issue:4 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Crystallization; Elasticity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Models, Chemical; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Stress, Mechanical	2006
Cobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide and vanadium pentoxide. IARC monographs on the evaluation of carcinogenic risks to humans, 2006, Volume: 86 Topics: Animals; Arsenicals; Carcinogens; Cobalt; Gallium; Guinea Pigs; Humans; Indium; Metals; Mice; Phosphines; Rabbits; Rats; Vanadium Compounds	2006
Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains. Nano letters, 2006, Volume: 6, Issue:9 Topics: Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Nanotubes; Particle Size; Quantum Dots; Spectrum Analysis; Wettability	2006
Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. Optics letters, 2007, Jan-01, Volume: 32, Issue:1 Topics: Arsenicals; Gallium; Indium; Lasers; Nanotechnology; Normal Distribution; Optics and Photonics; Quantum Dots; Temperature	2007
Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber. Small (Weinheim an der Bergstrasse, Germany), 2006, Volume: 2, Issue:3 Topics: Arsenicals; Computer Simulation; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Microscopy, Electron, Scanning; Models, Chemical; Models, Molecular; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Surface Properties	2006
Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement. Small (Weinheim an der Bergstrasse, Germany), 2005, Volume: 1, Issue:11 Topics: Arsenicals; Gallium; Gold; Indium; Ions; Metal Nanoparticles; Metals; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanostructures; Nanotechnology; Nitrogen; Phosphines; Semiconductors; Silicon; Surface Properties; Surface-Active Agents	2005
Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field. Nano letters, 2007, Volume: 7, Issue:1 Topics: Arsenicals; Electromagnetic Fields; Gallium; Indium; Luminescence; Quantum Theory	2007
Theoretical study on controllability of quantum state energy in an InGaAs/GaAs quantum dot buried in InGaAs. Journal of nanoscience and nanotechnology, 2006, Volume: 6, Issue:12 Topics: Arsenicals; Computer Simulation; Dose-Response Relationship, Radiation; Gallium; Indium; Light; Linear Energy Transfer; Models, Chemical; Models, Molecular; Quantum Dots; Radiation Dosage; Semiconductors	2006
Morphology and composition of InAs/GaAs quantum dots. Journal of nanoscience and nanotechnology, 2007, Volume: 7, Issue:6 Topics: Arsenicals; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Particle Size; Quantum Dots; Surface Properties	2007
Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer. Journal of nanoscience and nanotechnology, 2007, Volume: 7, Issue:8 Topics: Arsenicals; Crystallization; Gallium; Indium; Microscopy, Atomic Force; Nanoparticles; Nanotechnology; Quantum Dots; Temperature	2007
Strong extinction of a far-field laser beam by a single quantum dot. Nano letters, 2007, Volume: 7, Issue:9 Topics: Arsenicals; Gallium; Indium; Lasers; Materials Testing; Nanotechnology; Quantum Dots	2007
Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths. Optics letters, 2007, Sep-15, Volume: 32, Issue:18 Topics: Arsenicals; Computer Simulation; Gallium; Indium; Light; Materials Testing; Models, Theoretical; Quantum Dots; Telecommunications	2007
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures. Small (Weinheim an der Bergstrasse, Germany), 2007, Volume: 3, Issue:11 Topics: Arsenicals; Computer Simulation; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Surface Properties	2007
Direct observation of polarons in electron populated quantum dots by resonant Raman scattering. Journal of nanoscience and nanotechnology, 2008, Volume: 8, Issue:2 Topics: Arsenicals; Electrons; Gallium; Indium; Quantum Dots; Semiconductors; Spectrum Analysis, Raman	2008
The theoretical investigation of all-optical polarization switching based on InGaAs(P) Bragg-spaced quantum wells. Optics express, 2008, Jan-07, Volume: 16, Issue:1 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Models, Theoretical; Optics and Photonics; Quantum Dots; Quantum Theory; Refractometry; Signal Processing, Computer-Assisted	2008
Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Optics express, 2008, Jan-21, Volume: 16, Issue:2 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Quantum Dots; Temperature	2008
Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon. Optics express, 2008, Mar-31, Volume: 16, Issue:7 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Fiber Optic Technology; Gallium; Hydrogen; Indium; Lasers, Semiconductor; Quantum Dots; Silicon; Systems Integration	2008
Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities. Optics express, 2008, Apr-14, Volume: 16, Issue:8 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Photons; Quality Control; Quantum Dots; Temperature	2008
1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation. Optics express, 2008, Apr-14, Volume: 16, Issue:8 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Models, Theoretical; Quantum Dots; Quantum Theory; Refractometry; Signal Processing, Computer-Assisted; Telecommunications	2008
High-speed all-optical modulation using an InGaAs/AlAsSb quantum well waveguide. Optics express, 2008, Jun-23, Volume: 16, Issue:13 Topics: Arsenicals; Computer Simulation; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Microwaves; Models, Theoretical; Optics and Photonics; Quantum Dots; Scattering, Radiation; Telecommunications	2008
Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer. Optics express, 2008, Dec-08, Volume: 16, Issue:25 Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Electronics; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Light; Models, Theoretical; Optical Devices; Scattering, Radiation; Transducers	2008
Evolution of epitaxial InAs nanowires on GaAs 111B. Small (Weinheim an der Bergstrasse, Germany), 2009, Volume: 5, Issue:3 Topics: Arsenicals; Gallium; Indium; Microscopy, Electron, Scanning; Nanowires	2009
Site-controlled InGaAs quantum dots with tunable emission energy. Small (Weinheim an der Bergstrasse, Germany), 2009, Volume: 5, Issue:8 Topics: Arsenic; Arsenicals; Gallium; Indium; Luminescence; Nanostructures; Quantum Dots; Surface Properties	2009
Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate. Optics express, 2009, Apr-27, Volume: 17, Issue:9 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Silicon; Temperature	2009
Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure. Optics express, 2009, May-25, Volume: 17, Issue:11 Topics: Arsenicals; Gallium; Indium; Light; Luminescent Measurements; Nanotechnology; Nanotubes; Photons; Refractometry; Scattering, Radiation	2009
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures. Nanotechnology, 2009, Jul-08, Volume: 20, Issue:27 Topics: Arsenicals; Gallium; Indium; Luminescence; Nanostructures; Photochemical Processes; Quantum Dots; Spectrum Analysis; Wettability	2009
Filling of hole arrays with InAs quantum dots. Nanotechnology, 2009, Jul-15, Volume: 20, Issue:28 Topics: Arsenicals; Gallium; Indium; Monte Carlo Method; Nanotechnology; Quantum Dots	2009
Growth of vertical InAs nanowires on heterostructured substrates. Nanotechnology, 2009, Jul-15, Volume: 20, Issue:28 Topics: Arsenicals; Gallium; Indium; Microscopy, Atomic Force; Microscopy, Electron, Transmission; Nanowires	2009
High-brightness single photon source from a quantum dot in a directional-emission nanocavity. Optics express, 2009, Aug-17, Volume: 17, Issue:17 Topics: Algorithms; Arsenicals; Equipment Design; Fiber Optic Technology; Gallium; Indium; Lasers; Luminescence; Microscopy, Electron, Scanning; Models, Statistical; Normal Distribution; Optics and Photonics; Photons; Poisson Distribution; Quantum Dots; Temperature	2009
Effect of low-energy gallium-aluminum-arsenide and aluminium gallium indium phosphide laser irradiation on the viability of C2C12 myoblasts in a muscle injury model. Photomedicine and laser surgery, 2009, Volume: 27, Issue:6 Topics: Aluminum Compounds; Animals; Arsenicals; Cell Line; Cell Proliferation; Cell Survival; Cells, Cultured; Gallium; Indium; Lasers, Semiconductor; Low-Level Light Therapy; Mice; Muscle, Skeletal; Myoblasts; Phosphines	2009
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths. Nanotechnology, 2009, Oct-14, Volume: 20, Issue:41 Topics: Arsenicals; Gallium; Indium; Quantum Dots	2009
Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes. Optics letters, 2009, Oct-01, Volume: 34, Issue:19 Topics: Arsenicals; Equipment Design; Gallium; Indium; Light; Materials Testing; Microscopy, Electron, Scanning; Nanostructures; Nanotechnology; Optics and Photonics; Photons; Quantum Dots; Semiconductors; Surface Properties; Temperature	2009
Toward a 1550 nm InGaAs photoconductive switch for terahertz generation. Optics letters, 2009, Oct-15, Volume: 34, Issue:20 Topics: Arsenicals; Equipment Design; Fiber Optic Technology; Gallium; Indium; Lenses; Light; Metal Nanoparticles; Models, Statistical; Nanocomposites; Optics and Photonics; Photochemistry; Semiconductors; Temperature; Transducers	2009
Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers. Optics express, 2009, Oct-26, Volume: 17, Issue:22 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Miniaturization; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity	2009
InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides. Optics express, 2010, Jan-18, Volume: 18, Issue:2 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Photometry; Refractometry; Semiconductors; Silicon; Systems Integration	2010
Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer. Optics express, 2010, May-10, Volume: 18, Issue:10 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Solid-State; Quantum Dots; Silicon	2010
Hybrid planar microresonators with organic and InGaAs active media. Optics express, 2010, May-24, Volume: 18, Issue:11 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Miniaturization; Optical Devices; Organic Chemicals; Transducers	2010
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors. Nanoscale, 2010, Volume: 2, Issue:7 Topics: Arsenicals; Cold Temperature; Gallium; Indium; Quantum Dots; Spectrophotometry, Infrared	2010
Stray light characterization of an InGaAs anamorphic hyperspectral imager. Optics express, 2010, Aug-02, Volume: 18, Issue:16 Topics: Arsenicals; Equipment Design; Gallium; Image Enhancement; Indium; Light; Microscopy, Fluorescence; Optics and Photonics	2010
Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers. Optics express, 2010, Aug-30, Volume: 18, Issue:18 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Gallium; Indium; Lasers, Semiconductor; Light; Optics and Photonics; Quantum Dots; Semiconductors	2010
Designs for high-efficiency electrically pumped photonic nanowire single-photon sources. Optics express, 2010, Sep-27, Volume: 18, Issue:20 Topics: Arsenicals; Computer Simulation; Gallium; Indium; Lasers; Metals; Nanoparticles; Nanotechnology; Nanowires; Optics and Photonics; Particle Size; Photons; Polymers; Quantum Dots; Refractometry; Surface Properties	2010
Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon. Optics letters, 2010, Oct-15, Volume: 35, Issue:20 Topics: Arsenicals; Equipment Design; Gallium; Indium; Lasers; Light; Optics and Photonics; Semiconductors; Silicon; Silicon Dioxide	2010
Etched beam splitters in InP/InGaAsP. Optics express, 2011, Jan-17, Volume: 19, Issue:2 Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Interferometry; Lenses; Phosphines; Refractometry	2011
GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating. Optics express, 2011, Jan-31, Volume: 19, Issue:3 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Feedback; Gallium; Indium; Lasers; Membranes, Artificial; Phosphines; Refractometry; Silicon	2011
Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot. Optics express, 2011, Feb-28, Volume: 19, Issue:5 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Photons; Quantum Dots	2011
Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces. Nanoscale, 2011, Volume: 3, Issue:4 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Infrared Rays; Lighting; Materials Testing; Particle Size; Quantum Dots; Refractometry	2011
In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires. Nanotechnology, 2011, May-13, Volume: 22, Issue:19 Topics: Arsenicals; Catalysis; Electrons; Gallium; Indium; Light; Luminescence; Nanotechnology; Nanowires; Optics and Photonics; Quantum Dots; Spectrum Analysis, Raman; Temperature	2011
Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs. Journal of nanoscience and nanotechnology, 2011, Volume: 11, Issue:3 Topics: Arsenicals; Computer Simulation; Energy Transfer; Gallium; Indium; Magnetics; Models, Chemical; Quantum Dots; Semiconductors	2011
Strong enhancement of solar cell efficiency due to quantum dots with built-in charge. Nano letters, 2011, Jun-08, Volume: 11, Issue:6 Topics: Arsenicals; Electric Power Supplies; Gallium; Indium; Quantum Dots; Solar Energy; Surface Properties	2011
Bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Nano letters, 2011, Jun-08, Volume: 11, Issue:6 Topics: Arsenicals; Dimethylpolysiloxanes; Gallium; Indium; Nanostructures; Optical Fibers; Pancreatitis-Associated Proteins; Particle Size; Surface Properties	2011
InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination. Optics express, 2011, Apr-25, Volume: 19, Issue:9 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Phosphines; Photometry; Semiconductors	2011
Single rolled-up InGaAs/GaAs quantum dot microtubes integrated with silicon-on-insulator waveguides. Optics express, 2011, Jun-20, Volume: 19, Issue:13 Topics: Arsenicals; Fiber Optic Technology; Gallium; Indium; Lasers; Quantum Dots; Semiconductors; Silicon; Telecommunications	2011
Efficient spectrofluorimetric analysis of single-walled carbon nanotube samples. Analytical chemistry, 2011, Oct-01, Volume: 83, Issue:19 Topics: Arsenicals; Fluorescence; Gallium; Indium; Lasers; Nanotubes, Carbon; Spectroscopy, Near-Infrared	2011
In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics. Nano letters, 2011, Nov-09, Volume: 11, Issue:11 Topics: Arsenicals; Electromagnetic Fields; Gallium; Indium; Light; Materials Testing; Nanostructures; Particle Size; Silicon	2011
Near-room-temperature mid-infrared quantum well photodetector. Advanced materials (Deerfield Beach, Fla.), 2011, Dec-08, Volume: 23, Issue:46 Topics: Absorption; Aluminum; Arsenicals; Gallium; Indium; Infrared Rays; Quantum Theory; Semiconductors; Temperature	2011
Field-driven all-optical wavelength converter using novel InGaAsP/InAlGaAs quantum wells. Optics express, 2011, Dec-19, Volume: 19, Issue:27 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Optical Devices; Phosphines; Quantum Dots; Signal Processing, Computer-Assisted; Telecommunications	2011
Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling. Journal of physics. Condensed matter : an Institute of Physics journal, 2012, Apr-04, Volume: 24, Issue:13 Topics: Arsenicals; Electrons; Gallium; Indium; Models, Chemical; Nanostructures; Nanotechnology; Nanowires; Semiconductors	2012
Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures. Journal of physics. Condensed matter : an Institute of Physics journal, 2012, Apr-11, Volume: 24, Issue:14 Topics: Anisotropy; Arsenicals; Computer Simulation; Electron Spin Resonance Spectroscopy; Gallium; Indium; Magnetic Fields; Quantum Dots; Spin Labels	2012
Enhanced in and out-coupling of InGaAs slab waveguides by periodic metal slit arrays. Optics express, 2012, Mar-12, Volume: 20, Issue:6 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Refractometry; Surface Plasmon Resonance	2012
Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics. Small (Weinheim an der Bergstrasse, Germany), 2012, Jun-25, Volume: 8, Issue:12 Topics: Arsenicals; Dimethylpolysiloxanes; Electrochemistry; Electronics; Equipment Design; Finite Element Analysis; Gallium; Indium; Microscopy, Electron, Scanning; Optics and Photonics; Phosphines; Photochemistry; Prostheses and Implants; Semiconductors; Surface Properties; Tensile Strength	2012
Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing. Optics express, 2012, May-07, Volume: 20, Issue:10 Topics: Aluminum; Arsenicals; Gallium; Indium; Infrared Rays; Light; Microscopy, Atomic Force; Nanotechnology; Optics and Photonics; Photochemistry; Quantum Dots; Temperature	2012
InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Arsenicals; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotubes; Particle Size; Quantum Dots; Surface Properties	2012
Controlling the abruptness of axial heterojunctions in III-V nanowires: beyond the reservoir effect. Nano letters, 2012, Jun-13, Volume: 12, Issue:6 Topics: Arsenicals; Electrodes; Gallium; Indium; Materials Testing; Semiconductors; Surface Properties	2012
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip. Optics express, 2012, May-21, Volume: 20, Issue:11 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Infrared Rays; Light; Photometry; Refractometry; Scattering, Radiation; Semiconductors; Silicon; Surface Plasmon Resonance; Systems Integration	2012
Nanolasers grown on silicon-based MOSFETs. Optics express, 2012, May-21, Volume: 20, Issue:11 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Nanotechnology; Silicon; Transistors, Electronic	2012
Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires. ACS nano, 2012, Oct-23, Volume: 6, Issue:10 Topics: Arsenicals; Crystallization; Electric Conductivity; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Refractometry; Surface Properties	2012
High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability. Optics letters, 2012, Oct-01, Volume: 37, Issue:19 Topics: Arsenicals; Gallium; Indium; Lasers; Quantum Dots; Temperature	2012
Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation. Optics express, 2012, Aug-27, Volume: 20, Issue:18 Topics: Arsenicals; Gallium; Indium; Ions; Materials Testing; Phosphines	2012
Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy. Optics express, 2012, Aug-27, Volume: 20, Issue:18 Topics: Aluminum; Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Solid-State; Phase Transition; Plasma Gases	2012
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities. Optics express, 2012, Sep-24, Volume: 20, Issue:20 Topics: Arsenicals; Crystallization; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Materials Testing; Quantum Dots; Silicon	2012
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy. Optics express, 2012, Aug-13, Volume: 20, Issue:17 Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Heavy Ions; Indium; Materials Testing; Phosphines; Photometry; Semiconductors	2012
Room-temperature electron spin amplifier based on Ga(In)NAs alloys. Advanced materials (Deerfield Beach, Fla.), 2013, Feb-06, Volume: 25, Issue:5 Topics: Alloys; Amplifiers, Electronic; Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Semiconductors; Spin Labels; Temperature	2013
Ion exchange synthesis of III-V nanocrystals. Journal of the American Chemical Society, 2012, Dec-12, Volume: 134, Issue:49 Topics: Arsenicals; Cadmium; Gallium; Indium; Ions; Nanoparticles; Phosphorus	2012
Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well. Journal of physics. Condensed matter : an Institute of Physics journal, 2013, Feb-13, Volume: 25, Issue:6 Topics: Arsenic; Arsenicals; Computer Simulation; Energy Transfer; Gallium; Indium; Luminescent Measurements; Materials Testing; Models, Chemical; Photochemistry; Quantum Theory	2013
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells. Optics express, 2013, Jan-14, Volume: 21 Suppl 1 Topics: Arsenicals; Electric Power Supplies; Equipment Design; Gallium; Indium; Materials Testing; Pancreatitis-Associated Proteins; Refractometry; Solar Energy; Sunlight; Surface Plasmon Resonance	2013
Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire. Nano letters, 2013, Apr-10, Volume: 13, Issue:4 Topics: Arsenicals; Equipment Design; Gallium; Indium; Nanostructures; Nanotechnology; Nanowires; Quantum Dots; Silicon	2013
Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression. Optics express, 2013, Mar-25, Volume: 21, Issue:6 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Quantum Theory	2013
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy. Nanotechnology, 2013, May-31, Volume: 24, Issue:21 Topics: Arsenicals; Electric Conductivity; Gallium; Indium; Materials Testing; Nanowires; Particle Size; Phosphines; Radiation Dosage; Semiconductors; Terahertz Radiation; Terahertz Spectroscopy	2013
Large area photoconductive terahertz emitter for 1.55 μm excitation based on an InGaAs heterostructure. Nanotechnology, 2013, May-31, Volume: 24, Issue:21 Topics: Arsenicals; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Lighting; Materials Testing; Nanoparticles; Nanotechnology; Surface Properties; Terahertz Radiation	2013
Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes. Optics express, 2013, Jul-15, Volume: 21, Issue:14 Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Phosphines; Photometry; Refractometry; Semiconductors	2013
Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths. Nano letters, 2013, Oct-09, Volume: 13, Issue:10 Topics: Anisotropy; Arsenicals; Crystallization; Gallium; Indium; Nanotechnology; Particle Size; Quantum Dots	2013
Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit. Nano letters, 2013, Volume: 13, Issue:12 Topics: Arsenicals; Crystallization; Gallium; Indium; Lasers; Nanostructures; Optics and Photonics; Polymers; Silicon; Surface Properties	2013
InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning. Nano letters, 2013, Volume: 13, Issue:12 Topics: Arsenicals; Crystallization; Gallium; Indium; Methacrylates; Microscopy, Electron, Transmission; Nanowires; Polymers; Polystyrenes	2013
InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate. Optics express, 2014, Sep-22, Volume: 22, Issue:19 Topics: Arsenicals; Equipment Design; Gallium; Indium; Light; Nanotechnology; Quantum Dots	2014
Simultaneous integration of different nanowires on single textured Si (100) substrates. Nano letters, 2015, Mar-11, Volume: 15, Issue:3 Topics: Adsorption; Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Nanocomposites; Nanowires; Particle Size; Silicon; Surface Properties; Systems Integration	2015
Automated Spectroscopic Tissue Classification in Colorectal Surgery. Surgical innovation, 2015, Volume: 22, Issue:6 Topics: Adipose Tissue; Aged; Aged, 80 and over; Arsenicals; Colorectal Surgery; Female; Gallium; Humans; Indium; Male; Mesenteric Arteries; Middle Aged; Silicon; Spectrum Analysis; Surgery, Computer-Assisted; Ureter	2015
574-647 nm wavelength tuning by second-harmonic generation from diode-pumped PPKTP waveguides. Optics letters, 2015, Mar-01, Volume: 40, Issue:5 Topics: Arsenicals; Gallium; Indium; Lasers, Semiconductor; Phosphates; Quantum Dots; Titanium	2015
Towards automated spectroscopic tissue classification in thyroid and parathyroid surgery. The international journal of medical robotics + computer assisted surgery : MRCAS, 2017, Volume: 13, Issue:1 Topics: Adipose Tissue; Adolescent; Adult; Aged; Arsenicals; Automation; Calibration; Electronic Data Processing; Equipment Design; Female; Gallium; Humans; Indium; Male; Middle Aged; Parathyroid Glands; Regression Analysis; Silicon; Spectrophotometry; Spectrum Analysis; Thyroid Gland; Young Adult	2017
Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy. Journal of nanoscience and nanotechnology, 2016, Volume: 16, Issue:6 Topics: Arsenicals; Gallium; Indium; Kinetics; Nanostructures; Nanotechnology; Silicon Dioxide	2016
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry. Nano letters, 2017, 02-08, Volume: 17, Issue:2 Topics: Arsenicals; Electric Conductivity; Electronics; Electrons; Equipment and Supplies; Gallium; Indium; Nanowires; Particle Size; Polyethylene Glycols; Protons; Semiconductors	2017
Ecotoxicity assessment of ionic As(III), As(V), In(III) and Ga(III) species potentially released from novel III-V semiconductor materials. Ecotoxicology and environmental safety, 2017, Volume: 140 Topics: Aliivibrio fischeri; Animals; Arsenates; Arsenicals; Arsenites; Biological Assay; Daphnia; Ecotoxicology; Gallium; Indium; Ions; Semiconductors; Toxicity Tests, Acute	2017
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles. Journal of environmental science and health. Part A, Toxic/hazardous substances & environmental engineering, 2020, Volume: 55, Issue:2 Topics: Aliivibrio fischeri; Arsenicals; Gallium; Indium; Methane; Nanoparticles; Particle Size; Semiconductors; Sewage; Surface Properties; Water Pollutants, Chemical; Water Purification	2020