germanium and silicon-nitride

We have proposed a new approach to tune the operation wavelength of Franz-Keldysh Ge electro-absorption modulation in Si photonics by controlling the local strain environment to cover the whole range of C + L bands (1.53 - 1.62 μm). The present paper shows a proof of strain-tuning modulator concept by the shift of the Ge absorption edge using SiN(x) stressor films and Franz-Keldysh effect in strain-controlled Ge.

Topics: Elastic Modulus; Equipment Design; Equipment Failure Analysis; Germanium; Light; Refractometry; Scattering, Radiation; Semiconductors; Silicon Compounds; Stress, Mechanical

In this Letter using experimental and theoretical methods, we show that the solid solutions of group 14 nitrides having spinel structure (γ-M3N4 where M=Si, Ge, Sn) exhibit mainly direct electronic band gaps with values that span the entire visible wavelength region, making these hard and thermally stable materials suitable for optoelectronic devices and, in particular, lighting applications. Using the simulated band structure, we also calculate the exciton binding energy. The combination of large exciton binding energies and the tunable electronic band gaps in the visible range makes these binary spinel nitrides and their solid solutions a new class of multifunctional materials with optoelectronic properties that can be engineered to suit the desired application.

Topics: Electric Conductivity; Germanium; Lighting; Nitrogen Compounds; Semiconductors; Silicon Compounds; Spectrometry, X-Ray Emission; Tin Compounds; X-Ray Absorption Spectroscopy

Topics: Germanium; Manganese; Microscopy, Atomic Force; Nanowires; Silicon Compounds