Page last updated: 2024-09-03

gallium nitride and silicon

gallium nitride has been researched along with silicon in 21 studies

Compound Research Comparison

Studies
(gallium nitride)
Trials
(gallium nitride)
Recent Studies (post-2010)
(gallium nitride)
Studies
(silicon)
Trials
(silicon)
Recent Studies (post-2010) (silicon)
335020413,461716,740

Research

Studies (21)

TimeframeStudies, this research(%)All Research%
pre-19900 (0.00)18.7374
1990's0 (0.00)18.2507
2000's9 (42.86)29.6817
2010's12 (57.14)24.3611
2020's0 (0.00)2.80

Authors

AuthorsStudies
Chon, B; Chung, S; Hong, S; Joo, T; Kim, DE; Kim, M; Xu, C1
Malhotra, LK; Mann, AK; Mehta, BR; Shivaprasad, SM; Varandani, D1
Chen, CR; Young, TH1
Bando, Y; Golberg, D; Li, MS; Yin, LW1
Davis, RF; Hwang, H; Lee, J; Lee, KJ; Nuzzo, RG; Reitmeier, ZJ; Rogers, JA1
Calarco, R; Debnath, RK; Lüth, H; Meijers, RJ; Stoica, T; Sutter, E1
Barash, Y; Böni, P; Heeg, T; Herrnberger, A; Idzerda, Y; Kourkoutis, LF; Liberati, M; Mannhart, J; Mühlbauer, S; Muller, DA; Richter, C; Röckerath, M; Schlom, DG; Schmehl, A; Schubert, J; Thiel, S; Vaithyanathan, V1
Belcher, AM; Bhaviripudi, S; Hu, EL; Qi, J1
Davidovic, D; Kirkham, M; Liu, J; Mai, W; Snyder, RL; Wang, ZL; Wei, Y; Xu, S1
Service, RF1
Han, CB; He, C; Li, XJ1
Andrews, B; Ivanisevic, A; Jewett, SA; Makowski, MS; Manfra, MJ1
Botton, GA; Cui, K; Fathololoumi, S; Golam Kibria, M; Mi, Z1
Han, CB; He, C; Li, XJ; Meng, XB; Tian, YT; Wan, YR; Zhang, YJ1
Cardin, V; Dion-Bertrand, LI; Grégoire, P; Leonelli, R; Mi, Z; Nguyen, HP; Sakowicz, M; Silva, C1
Humphreys, CJ; Wallis, DJ; Zhu, D1
Fang, W; Jiang, F; Mo, C; Wang, L; Zheng, C1
Bacher, G; Blumenthal, S; Keller, G; Koester, R; Pfingsten, O; Poloczek, A; Prost, W; Quitsch, WA; Sager, D; Tegude, FJ1
Brandt, O; Fernández-Garrido, S; Flissikowski, T; Geelhaar, L; Gotschke, T; Grahn, HT; Hauswald, C; Riechert, H; Wölz, M1
Chen, CC; Chyi, JI; He, JH; Huang, MR; Hus, JW; Lai, KY; Lee, MJ; Liu, CP; Liu, HH; Wei, TC1
Griswold, MA; Twieg, M1

Reviews

1 review(s) available for gallium nitride and silicon

ArticleYear
Prospects of III-nitride optoelectronics grown on Si.
    Reports on progress in physics. Physical Society (Great Britain), 2013, Volume: 76, Issue:10

    Topics: Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Lighting; Nanoparticles; Nanotechnology; Optical Devices; Semiconductors; Silicon

2013

Other Studies

20 other study(ies) available for gallium nitride and silicon

ArticleYear
Doping of Si into GaN nanowires and optical properties of resulting composites.
    Journal of nanoscience and nanotechnology, 2005, Volume: 5, Issue:4

    Topics: Gallium; Hot Temperature; Manufactured Materials; Materials Testing; Microscopy, Electron, Scanning; Microscopy, Electron, Transmission; Models, Chemical; Nanotechnology; Nanotubes; Silicon; Spectrum Analysis, Raman; Temperature; Thermodynamics; X-Ray Diffraction

2005
Size-induced changes in optical and X-ray photoelectron spectra of GaN nanoparticles deposited at lower substrate temperature.
    Journal of nanoscience and nanotechnology, 2005, Volume: 5, Issue:11

    Topics: Gallium; Microscopy, Electron, Transmission; Nanostructures; Nanotechnology; Nanotubes; Particle Size; Quartz; Silicon; Spectrometry, X-Ray Emission; Surface Properties; Temperature; X-Ray Diffraction; X-Rays

2005
Assessment of GaN chips for culturing cerebellar granule neurons.
    Biomaterials, 2006, Volume: 27, Issue:18

    Topics: Animals; Cell Culture Techniques; Cell Differentiation; Cerebellum; Gallium; GAP-43 Protein; L-Lactate Dehydrogenase; Microarray Analysis; Neurons; Rats; Silicon

2006
Growth of semiconducting GaN hollow spheres and nanotubes with very thin shells via a controllable liquid gallium-gas interface chemical reaction.
    Small (Weinheim an der Bergstrasse, Germany), 2005, Volume: 1, Issue:11

    Topics: Ammonia; Crystallization; Gallium; Gases; Light; Microscopy, Electron, Transmission; Nanotechnology; Nanotubes; Pressure; Semiconductors; Silicon; Temperature; X-Ray Diffraction

2005
A printable form of single-crystalline gallium nitride for flexible optoelectronic systems.
    Small (Weinheim an der Bergstrasse, Germany), 2005, Volume: 1, Issue:12

    Topics: Crystallization; Electrochemistry; Electronics; Gallium; Materials Testing; Microscopy, Electron, Scanning; Microscopy, Electron, Transmission; Nanoparticles; Nanotechnology; Nanowires; Photochemistry; Plastics; Semiconductors; Silicon; Temperature

2005
Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.
    Nano letters, 2007, Volume: 7, Issue:8

    Topics: Crystallization; Gallium; Heavy Ions; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Silicon; Surface Properties

2007
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN.
    Nature materials, 2007, Volume: 6, Issue:11

    Topics: Computer Simulation; Crystallography, X-Ray; Europium; Gallium; Nanoparticles; Nanotechnology; Oxides; Semiconductors; Silicon

2007
Synthesis, characterization, and optical properties of ordered arrays of III-nitride nanocrystals.
    Nano letters, 2007, Volume: 7, Issue:11

    Topics: Crystallization; Gallium; Luminescence; Metal Nanoparticles; Micelles; Microscopy, Atomic Force; Microscopy, Electron, Transmission; Models, Chemical; Nanoparticles; Nanotechnology; Nitrogen; Oxygen; Photochemistry; Polymers; Silicon; Spectrophotometry; X-Ray Diffraction

2007
Patterned growth of vertically aligned ZnO nanowire arrays on inorganic substrates at low temperature without catalyst.
    Journal of the American Chemical Society, 2008, Nov-12, Volume: 130, Issue:45

    Topics: Catalysis; Cold Temperature; Crystallization; Gallium; Nanowires; Polymethyl Methacrylate; Silicon; X-Ray Diffraction; Zinc Oxide

2008
Nitrides race beyond the light.
    Science (New York, N.Y.), 2010, Mar-26, Volume: 327, Issue:5973

    Topics: Electronics, Medical; Gallium; Humans; Indium; Semiconductors; Silicon

2010
Near-infrared light emission from a GaN/Si nanoheterostructure array.
    Advanced materials (Deerfield Beach, Fla.), 2011, Nov-02, Volume: 23, Issue:41

    Topics: Electric Conductivity; Gallium; Infrared Rays; Luminescent Measurements; Nanostructures; Porosity; Semiconductors; Silicon

2011
Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides.
    Acta biomaterialia, 2012, Volume: 8, Issue:2

    Topics: Amino Acid Sequence; Animals; Biocompatible Materials; Gallium; Microscopy, Electron, Scanning; Molecular Sequence Data; PC12 Cells; Peptides; Rats; Silicon; Solutions; Spectrophotometry, Atomic; Surface Properties

2012
Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.
    Nanotechnology, 2012, Mar-02, Volume: 23, Issue:8

    Topics: Catalysis; Crystallization; Gallium; Heavy Ions; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Porosity; Quantum Dots; Silicon; Surface Properties

2012
Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array.
    Optics express, 2012, Feb-27, Volume: 20, Issue:5

    Topics: Equipment Design; Equipment Failure Analysis; Gallium; Hardness; Hot Temperature; Luminescent Measurements; Nanostructures; Nanotechnology; Silicon

2012
Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).
    Nanotechnology, 2013, Feb-01, Volume: 24, Issue:4

    Topics: Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotubes; Particle Size; Silicon; Surface Properties

2013
Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.
    TheScientificWorldJournal, 2013, Volume: 2013

    Topics: Equipment Design; Gallium; Indium; Light; Lighting; Luminescence; Microscopy, Fluorescence; Quantum Theory; Silicon; Temperature; X-Ray Diffraction

2013
High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
    Nano letters, 2015, Apr-08, Volume: 15, Issue:4

    Topics: Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Materials Testing; Nanowires; Particle Size; Semiconductors; Silicon

2015
Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.
    Nano letters, 2015, Jun-10, Volume: 15, Issue:6

    Topics: Gallium; Nanowires; Silicon; Titanium

2015
Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si.
    Advanced materials (Deerfield Beach, Fla.), 2015, Sep-02, Volume: 27, Issue:33

    Topics: Electrical Equipment and Supplies; Gallium; Nanotechnology; Nanotubes; Silicon

2015
High efficiency radiofrequency power amplifier module for parallel transmit arrays at 3 Tesla.
    Magnetic resonance in medicine, 2017, Volume: 78, Issue:4

    Topics: Equipment Design; Gallium; Magnetic Resonance Imaging; Phantoms, Imaging; Radio Waves; Silicon; Transistors, Electronic

2017