gallium nitride has been researched along with silicon nitride in 3 studies
| Studies (gallium nitride) | Trials (gallium nitride) | Recent Studies (post-2010) (gallium nitride) | Studies (silicon nitride) | Trials (silicon nitride) | Recent Studies (post-2010) (silicon nitride) |
|---|---|---|---|---|---|
| 335 | 0 | 204 | 574 | 4 | 346 |
| Timeframe | Studies, this research(%) | All Research% |
|---|---|---|
| pre-1990 | 0 (0.00) | 18.7374 |
| 1990's | 0 (0.00) | 18.2507 |
| 2000's | 2 (66.67) | 29.6817 |
| 2010's | 1 (33.33) | 24.3611 |
| 2020's | 0 (0.00) | 2.80 |
| Authors | Studies |
|---|---|
| Chang, HJ; Chen, TT; Chen, YF; Huang, LL; Kuo, HC; Tsai, JY; Wang, TC | 1 |
| Cumtornkittikul, C; Hassanet, S; Iizuka, N; Managaki, N; Nakano, Y; Shimizu, T; Sugiyama, M; Yoshida, H | 1 |
| Hahn, C; Hwang, YJ; Jeong, HE; Wu, CH; Yang, P | 1 |
3 other study(ies) available for gallium nitride and silicon nitride
| Article | Year |
|---|---|
Optically modulated internal strain in InGaN quantum dots grown on SiN(x) nano masks.
Topics: Crystallization; Elasticity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Nanotechnology; Quantum Dots; Silicon Compounds; Stress, Mechanical; Surface Properties; Transducers | 2008 |
Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion.
Topics: Aluminum Compounds; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Refractometry; Semiconductors; Signal Processing, Computer-Assisted; Silicon Compounds | 2009 |
Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties.
Topics: Electric Conductivity; Gallium; Indium; Light; Materials Testing; Nanostructures; Silicon Compounds | 2012 |