gallium nitride has been researched along with gallium arsenide in 4 studies
| Studies (gallium nitride) | Trials (gallium nitride) | Recent Studies (post-2010) (gallium nitride) | Studies (gallium arsenide) | Trials (gallium arsenide) | Recent Studies (post-2010) (gallium arsenide) |
|---|---|---|---|---|---|
| 335 | 0 | 204 | 453 | 8 | 203 |
| Timeframe | Studies, this research(%) | All Research% |
|---|---|---|
| pre-1990 | 0 (0.00) | 18.7374 |
| 1990's | 0 (0.00) | 18.2507 |
| 2000's | 1 (25.00) | 29.6817 |
| 2010's | 2 (50.00) | 24.3611 |
| 2020's | 1 (25.00) | 2.80 |
| Authors | Studies |
|---|---|
| Andrews, SR; Hussain, A | 1 |
| Frenzel, H; Grundmann, M; Lajn, A; Lorenz, M; Schein, F; von Wenckstern, H; Zhang, Z | 1 |
| Guina, MD; Härkönen, A; Korpijärvi, VM; Leinonen, T; Puustinen, J | 1 |
| Iwamoto, Y; Sato, T | 1 |
1 review(s) available for gallium nitride and gallium arsenide
| Article | Year |
|---|---|
Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.
Topics: Aluminum Oxide; Arsenicals; Carbon Compounds, Inorganic; Gallium; Glass; Silicon Compounds; Transistors, Electronic; Zinc Oxide | 2010 |
3 other study(ies) available for gallium nitride and gallium arsenide
| Article | Year |
|---|---|
Ultrabroadband polarization analysis of terahertz pulses.
Topics: Arsenicals; Circular Dichroism; Electromagnetic Phenomena; Equipment Design; Gallium; Light; Optics and Photonics; Photochemistry; Radiation; Selenium; Spectrophotometry | 2008 |
11 W single gain-chip dilute nitride disk laser emitting around 1180 nm.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Lasers, Semiconductor | 2010 |
Development of a method for calculating effective displacement damage doses in semiconductors and applications to space field.
Topics: Protons; Semiconductors | 2022 |