Compounds > gallium nitride

Page last updated: 2024-09-03

gallium nitride and aluminum oxide

gallium nitride has been researched along with aluminum oxide in 17 studies

Compound Research Comparison

Studies (gallium nitride)	Trials (gallium nitride)	Recent Studies (post-2010) (gallium nitride)	Studies (aluminum oxide)	Trials (aluminum oxide)	Recent Studies (post-2010) (aluminum oxide)
335	0	204	7,707	264	3,179

Research

Studies (17)

Timeframe	Studies, this research(%)	All Research%
pre-1990	0 (0.00)	18.7374
1990's	0 (0.00)	18.2507
2000's	6 (35.29)	29.6817
2010's	11 (64.71)	24.3611
2020's	0 (0.00)	2.80

Authors

Authors	Studies
Chen, TC; Poochinda, K; Stoebe, TG	1
Budai, JD; Narayan, J; Narayan, RJ; Pant, P; Wei, W	1
Allegrini, M; Kawakami, Y; Micheletto, R; Yamada, D	1
Kang, SM; Kim, SW; Park, MH; Shin, TI; Song, WY; Yang, CW; Yang, JH; Yoon, DH	1
Manghnani, MH; Narayan, J; Pant, P; Wushuer, A	1
Chen, LC; Hong, LS; Huang, JB; Wang, CK	1
Cheng, CW; Cristiano, F; Fan, HJ; Ferraris, C; Lau, SP; Liang, HK; Pramana, SS; Yang, HY; Yu, SF	1
Frenzel, H; Grundmann, M; Lajn, A; Lorenz, M; Schein, F; von Wenckstern, H; Zhang, Z	1
Chang, XF; Gondal, MA; Ji, GB; Yamani, ZH; Yang, GF	1
Chang, KH; Huang, FW; Lai, WC; Lee, ML; Sheu, JK; Tu, SJ; Yang, CC; Yeh, YH	1
Baik, KH; Hwang, SM; Oh, K; Seo, YG; Son, JS; Song, H	1
Hon, S; Huang, FW; Ko, TK; Lai, WC; Lee, ML; Sheu, JK; Tu, SJ; Yang, YC	1
Burns, D; Kemp, AJ; Roth, PW	1
Chen, KY; Horng, RH; Hsu, CP; Tien, CH	1
An, PB; Li, JM; Liu, L; Lu, HX; Sun, XJ; Tian, LX; Wang, JX; Wei, XC; Yu, ZG; Zeng, YP; Zhang, F; Zhao, LX; Zhu, SC	1
Barange, N; Han, IK; Kim, YD; Ko, DH; Ko, H; Park, B; Park, JS	1
Dee, CF; Faiz, MS; Jaafar, MM; Mohd Razip Wee, MF; Yeop Majlis, B	1

Reviews

1 review(s) available for gallium nitride and aluminum oxide

Article	Year
Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits. Advanced materials (Deerfield Beach, Fla.), 2010, Dec-14, Volume: 22, Issue:47 Topics: Aluminum Oxide; Arsenicals; Carbon Compounds, Inorganic; Gallium; Glass; Silicon Compounds; Transistors, Electronic; Zinc Oxide	2010

Other Studies

16 other study(ies) available for gallium nitride and aluminum oxide

Article	Year
Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors. Radiation protection dosimetry, 2006, Volume: 119, Issue:1-4 Topics: Aluminum Oxide; Dose-Response Relationship, Radiation; Electrochemistry; Equipment Design; Equipment Failure Analysis; Gallium; Light; Materials Testing; Photochemistry; Radiation Dosage; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Systems Integration; Thermoluminescent Dosimetry; Transducers	2006
Nanostructured GaN nucleation layer for light-emitting diodes. Journal of nanoscience and nanotechnology, 2007, Volume: 7, Issue:8 Topics: Aluminum Oxide; Crystallization; Gallium; Hot Temperature; Light; Microscopy, Atomic Force; Microscopy, Electron, Transmission; Molecular Conformation; Nanoparticles; Nanotechnology; Photochemistry; Semiconductors; X-Rays	2007
A polarization-modulation method for the near-field mapping of laterally grown InGaN samples. Optics express, 2008, May-12, Volume: 16, Issue:10 Topics: Aluminum Oxide; Anisotropy; Equipment Design; Gallium; Indium; Light; Microscopy; Optics and Photonics	2008
Controllable dimension of ZnO nanowalls on GaN/c-Al2O3 substrate by vapor phase epitaxy method. Journal of nanoscience and nanotechnology, 2008, Volume: 8, Issue:9 Topics: Aluminum Oxide; Crystallization; Equipment Design; Gallium; Luminescence; Materials Testing; Microscopy, Electron, Scanning; Nanostructures; Nanotechnology; Surface Properties; Temperature; X-Ray Diffraction; Zinc Oxide	2008
Comparative Raman and HRTEM study of nanostructured GaN nucleation layers and device layers on sapphire (0001). Journal of nanoscience and nanotechnology, 2008, Volume: 8, Issue:11 Topics: Aluminum Oxide; Crystallization; Gallium; Macromolecular Substances; Materials Testing; Microscopy, Electron, Transmission; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Spectrum Analysis, Raman; Surface Properties	2008
A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode. Nanotechnology, 2009, Feb-25, Volume: 20, Issue:8 Topics: Aluminum Compounds; Aluminum Oxide; Crystallization; Electrodes; Equipment Design; Equipment Failure Analysis; Gallium; Lighting; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Porosity; Surface Properties	2009
Ultraviolet electroluminescence from randomly assembled n-SnO(2) nanowiresp-GaN:Mg heterojunction. ACS applied materials & interfaces, 2010, Volume: 2, Issue:4 Topics: Aluminum Oxide; Electrochemistry; Gallium; Light; Luminescence; Magnesium; Microscopy, Electron, Scanning; Nanotechnology; Nanowires; Silicon Dioxide; Surface Properties; Temperature; Ultraviolet Rays	2010
GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation. Journal of environmental science and health. Part A, Toxic/hazardous substances & environmental engineering, 2011, Volume: 46, Issue:4 Topics: Aluminum Oxide; Catalysis; Gallium; Lasers; Photochemistry; Rhodamines; Water Purification	2011
Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells. Optics express, 2011, Jun-20, Volume: 19, Issue:13 Topics: Aluminum Compounds; Aluminum Oxide; Argon; Electric Power Supplies; Electronics; Gallium; Microscopy, Electron, Scanning; Optical Devices; Quantum Dots	2011
Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates. Optics express, 2011, Jul-04, Volume: 19, Issue:14 Topics: Aluminum Oxide; Color; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Semiconductors	2011
Vertical InGaN light-emitting diodes with a sapphire-face-up structure. Optics express, 2012, Jan-02, Volume: 20, Issue:1 Topics: Aluminum Oxide; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Semiconductors	2012
Power scaling of a directly diode-laser-pumped Ti:sapphire laser. Optics express, 2012, Aug-27, Volume: 20, Issue:18 Topics: Aluminum Oxide; Energy Transfer; Equipment Design; Equipment Failure Analysis; Gallium; Lasers, Solid-State; Refractometry; Titanium	2012
Enhanced light output power of thin film GaN-based high voltage light-emitting diodes. Optics express, 2014, Oct-20, Volume: 22 Suppl 6 Topics: Aluminum Oxide; Energy Transfer; Equipment Design; Equipment Failure Analysis; Gallium; Lenses; Light; Lighting; Metal Nanoparticles; Scattering, Radiation; Semiconductors	2014
Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer. Optics express, 2014, Oct-20, Volume: 22 Suppl 6 Topics: Adsorption; Aluminum Oxide; Energy Transfer; Equipment Design; Equipment Failure Analysis; Gallium; Light; Lighting; Metal Nanoparticles; Nanopores; Scattering, Radiation; Semiconductors; Surface Plasmon Resonance	2014
Blue inorganic light emitting diode on flexible polyimide substrate using laser lift-off process. Journal of nanoscience and nanotechnology, 2014, Volume: 14, Issue:11 Topics: Aluminum Oxide; Gallium; Imides; Lasers; Light; Materials Testing; Nanostructures; Semiconductors; Surface Properties	2014
A Theoretical Study of Surface Mode Propagation with a Guiding Layer of GaN/Sapphire Hetero-Structure in Liquid Medium. Biosensors, 2018, Dec-05, Volume: 8, Issue:4 Topics: Aluminum Oxide; Biosensing Techniques; Elasticity; Gallium; Microfluidics; Sound	2018