Compounds > gallium arsenide
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gallium arsenide and gallium phosphide

gallium arsenide has been researched along with gallium phosphide in 5 studies

Research

Studies (5)

TimeframeStudies, this research(%)All Research%
pre-19900 (0.00)18.7374
1990's0 (0.00)18.2507
2000's2 (40.00)29.6817
2010's3 (60.00)24.3611
2020's0 (0.00)2.80

Authors

AuthorsStudies
Algra, RE; Bakkers, EP; Borgström, MT; Enckevort, WJ; Immink, G; Sourty, E; Verheijen, MA; Vlieg, E1
Bussadori, SK; Fernandes, KP; Ferrari, RA; Ferreira, MP; Gonzalez, DA; Gravalos, ED; Martins, MD1
Fickenscher, M; Gao, Q; Guo, Y; Jackson, HE; Jagadish, C; Kang, JH; Montazeri, M; Pistol, ME; Pryor, CE; Smith, LM; Tan, HH; Yarrison-Rice, J; Zou, J1
Huang, Y; Lee, J; Liu, Z; Meitl, M; Rogers, JA; Ryu, JH; Wu, J; Zhang, YW1
Liu, CP; Liu, H; Natrella, M; Renaud, CC; Rouvalis, E; Seeds, AJ1

Other Studies

5 other study(ies) available for gallium arsenide and gallium phosphide

ArticleYear
Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Nano letters, 2007, Volume: 7, Issue:10

    Topics: Arsenicals; Computer Simulation; Crystallization; Gallium; Imaging, Three-Dimensional; Macromolecular Substances; Materials Testing; Microscopy, Electron, Transmission; Models, Chemical; Models, Molecular; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Phosphines; Surface Properties; Temperature

2007
Effect of low-energy gallium-aluminum-arsenide and aluminium gallium indium phosphide laser irradiation on the viability of C2C12 myoblasts in a muscle injury model.
    Photomedicine and laser surgery, 2009, Volume: 27, Issue:6

    Topics: Aluminum Compounds; Animals; Arsenicals; Cell Line; Cell Proliferation; Cell Survival; Cells, Cultured; Gallium; Indium; Lasers, Semiconductor; Low-Level Light Therapy; Mice; Muscle, Skeletal; Myoblasts; Phosphines

2009
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.
    Nano letters, 2010, Mar-10, Volume: 10, Issue:3

    Topics: Arsenicals; Elastic Modulus; Electrons; Gallium; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Phosphines; Spectrum Analysis, Raman; Stress, Mechanical; Tensile Strength

2010
Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.
    Small (Weinheim an der Bergstrasse, Germany), 2012, Jun-25, Volume: 8, Issue:12

    Topics: Arsenicals; Dimethylpolysiloxanes; Electrochemistry; Electronics; Equipment Design; Finite Element Analysis; Gallium; Indium; Microscopy, Electron, Scanning; Optics and Photonics; Phosphines; Photochemistry; Prostheses and Implants; Semiconductors; Surface Properties; Tensile Strength

2012
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
    Optics express, 2012, Aug-13, Volume: 20, Issue:17

    Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Heavy Ions; Indium; Materials Testing; Phosphines; Photometry; Semiconductors

2012