arsenic has been researched along with indium arsenide in 205 studies
Timeframe | Studies, this research(%) | All Research% |
---|---|---|
pre-1990 | 0 (0.00) | 18.7374 |
1990's | 5 (2.44) | 18.2507 |
2000's | 87 (42.44) | 29.6817 |
2010's | 109 (53.17) | 24.3611 |
2020's | 4 (1.95) | 2.80 |
Authors | Studies |
---|---|
Fowler, BA; Takahashi, K; Yamamura, Y; Yamauchi, H | 1 |
Conner, EA; Fowler, BA; Yamauchi, H | 2 |
Hirata, M; Hisanaga, A; Inoue, N; Ishinishi, N; Makita, Y; Omura, M; Tanaka, A | 1 |
Gotoh, K; Hirata, M; Inoue, N; Ishinishi, N; Makita, Y; Omura, M; Tanaka, A; Zhao, M | 2 |
Gotoh, K; Hirata, M; Inoue, N; Makita, Y; Omura, M; Tanaka, A; Yamazaki, K; Zhao, M | 1 |
Aizawa, Y; Kotani, M; Kudo, Y; Lyons, YI; Okada, M; Shinji, H; Sugiura, Y; Watanabe, M | 1 |
Gerthsen, D; Kruse, P; Rosenauer, A | 1 |
Dal Savio, C; Danzebrink, HU; Güttler, B; Kazantsev, DV; Pierz, K | 1 |
Hirata, M; Omura, M; Tanaka, A | 1 |
Akaogi, T; Tanaka, M; Terauchi, M; Tsuda, K | 1 |
Tanaka, A | 1 |
Larsson, MW; Persson, AI; Samuelson, L; Wallenberg, LR | 1 |
Alivisatos, AP; Ho, M; Hughes, SM; Konkar, A; Lu, S; Madhukar, A; Zhang, Y | 1 |
Bhattacharya, P; Blom, DA; Chakrabarti, S; Holub, MA; Johnson, MB; Mishima, TD; Santos, MB | 1 |
Alivisatos, AP; Hughes, SM; Konkar, A; Lu, S; Madhukar, A | 1 |
Fang, Y; Huang, D; Liu, S; Shi, HZ; Wang, X; Yang, H; Yao, X; Zhang, B | 1 |
Bawendi, MG; Frangioni, JV; Kim, SW; Ohnishi, S; Tracy, JB; Zimmer, JP | 1 |
Lipsanen, H; Mattila, M; Riikonen, J; Sopanen, M; Sormunen, J; Tiilikainen, J | 1 |
Björk, MT; Fasth, C; Fuhrer, A; Samuelson, L | 1 |
Allen, JE; Lauhon, LJ; May, SJ; Perea, DE; Seidman, DN; Wessels, BW | 1 |
Hessman, D; Landin, L; Persson, AI; Pettersson, H; Samuelson, L; Trägårdh, J | 1 |
Bawendi, MG; Frangioni, JV; Kim, SW; Ohnishi, S; Tanaka, E; Zimmer, JP | 1 |
Gao, Q; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Suvorova, AA; Tan, HH; Zou, J | 1 |
Bell, DJ; Dong, L; Golling, M; Grützmacher, D; Nelson, BJ; Zhang, L | 1 |
Bauer, GU; Eriksson, J; Karlsson, LS; Mandl, B; Mårtensson, T; Mikkelsen, A; Samuelson, L; Seifert, W; Stangl, J | 1 |
Lind, E; Persson, AI; Samuelson, L; Wernersson, LE | 1 |
Liang, B; Salamo, GJ; Shih, CK; Wang, X; Wang, ZM | 1 |
Aharoni, A; Banin, U; Millo, O; Steiner, D | 1 |
Ferrere, S; Frank, AJ; Norman, AG; Nozik, AJ; Yu, P; Zhu, K | 1 |
Arakawa, Y; Bell, GR; Honma, T; Ishii, A; Tsukamoto, S | 1 |
Aplin, DP; Dayeh, SA; Wang, D; Yu, ET; Yu, PK; Zhou, X | 1 |
Lee, J; Liang, B; Mazur, YI; Sablon, KA; Salamo, GJ; Strom, NW; Wang, ZM | 1 |
Holtz, PO; Karlsson, KF; Larsson, M; Monemar, B; Moskalenko, ES; Petroff, PM; Schoenfeld, WV | 1 |
Mukai, K; Nakashima, K | 1 |
Cirlin, GE; Harmand, JC; Patriarche, G; Perinetti, U; Tchernycheva, M; Travers, L; Zwiller, V | 1 |
Dayeh, SA; Wang, D; Yu, ET | 3 |
Biasiol, G; Carlino, E; Golinelli, GB; Grillo, V; Guo, FZ; Heun, S; Locatelli, A; Mentes, TO; Sorba, L | 1 |
Bordag, M; Conache, G; Fröberg, LE; Gray, S; Montelius, L; Pettersson, H; Ribayrol, A; Samuelson, L | 1 |
Asakawa, K; Ikeda, N; Nakamura, Y; Ohkouchi, S; Sugimoto, Y | 1 |
Ahmad, I; Avrutin, V; Baski, AA; Moore, JC; Morkoç, H | 1 |
Bakkers, EP; Bleszynski, AC; Kouwenhoven, LP; Roest, AL; Westervelt, RM; Zwanenburg, FA | 1 |
Atatüre, M; Badolato, A; Dreiser, J; Goldberg, BB; Imamoglu, A; Swan, AK; Unlü, MS; Vamivakas, AN; Yilmaz, ST | 1 |
Eymery, J; Favre-Nicolin, V; Fröberg, L; Mårtensson, T; Niquet, YM; Rieutord, F; Robach, O; Samuelson, L | 1 |
Jiang, X; Li, Y; Lieber, CM; Nam, S; Qian, F; Xiong, Q | 1 |
Alloing, B; Balet, L; Chauvin, N; Fiore, A; Gérard, JM; Gilet, P; Grenouillet, L; Li, L; Olivier, N; Tchelnokov, A; Terrier, M; Zinoni, C | 1 |
Auchterlonie, GJ; Gao, Q; Guo, YN; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Tan, HH; Zou, J | 1 |
Klimov, VI; Pietryga, JM; Schaller, RD | 1 |
Ensslin, K; Krischek, R; Leturcq, R; Pfund, A; Schön, S; Shorubalko, I; Tyndall, D | 1 |
Aslan, B; Hawrylak, P; Korkusinski, M; Liu, HC; Lockwood, DJ | 1 |
Chen, Z; Li, G; Wang, T | 1 |
Attaluri, RS; Averitt, RD; Krishna, S; Prasankumar, RP; Rotella, P; Stintz, AD; Taylor, AJ; Urayama, J; Weisse-Bernstein, N | 1 |
Calligaro, M; Capua, A; Eisenstein, G; Forchel, A; Krakowski, M; Mikhelashvili, V; Parillaud, O; Reithmaier, JP; Somers, A | 1 |
Akca, IB; Aydinli, A; Dagli, N; Dana, A; Fiore, A; Li, L; Rossetti, M | 1 |
Bhattacharya, P; Yang, J | 1 |
Cade, NI; Ding, D; Gotoh, H; Johnson, SR; Kamada, H; Kuramochi, E; Notomi, M; Sogawa, T; Tanabe, T; Tawara, T; Zhang, YH | 1 |
Fischer, M; Forchel, A; Gerschütz, F; Höfling, S; Kaiser, W; Koeth, J; Kovsh, A; Krestnikov, I; Schilling, C | 1 |
Abedin, KS; Akimoto, R; Ishikawa, H; Lu, GW; Miyazaki, T | 1 |
Caroff, P; Deppert, K; Dick, KA; Jeppsson, M; Nilsson, HA; Samuelson, L; Wagner, JB; Wallenberg, LR; Wernersson, LE | 1 |
Thomas, J | 1 |
Aagesen, M; Feidenhans'l, R; Johnson, E; Lindelof, PE; Mariager, SO; Nygård, J; Spiecker, E; Sørensen, CB | 1 |
Peng, X; Xie, R | 1 |
Conache, G; Fröberg, LE; Gray, SM; Montelius, L; Pettersson, H; Ribayrol, A; Samuelson, L | 1 |
Coldren, LA; Dummer, MM; Klamkin, J; Raring, JR; Tauke-Pedretti, A | 1 |
Holtz, PO; Larsson, LA; Larsson, M; Moskalenko, ES; Petroff, PM; Schoenfeld, WV | 1 |
Bokor, J; Chueh, YL; Fan, Z; Ford, AC; Guo, J; Ho, JC; Javey, A; Tseng, YC | 1 |
Gao, Q; Guo, Y; Jagadish, C; Joyce, HJ; Kim, Y; Paladugu, M; Tan, HH; Wang, Y; Zhang, X; Zou, J | 1 |
Lee, JH; Liang, BL; Mazur, YI; Salamo, GJ; Shih, CK; Wang, XY; Wang, ZM | 1 |
Buhro, WE; Gibbons, PC; Hollingsworth, JA; Jeong, S; Pietryga, JM; Wang, F; Yu, H | 1 |
Bordas, F; Dupuy, E; Gendry, M; Rahmani, A; Regreny, P; Seassal, C; Steel, MJ; Viktorovitch, P | 1 |
Adachi, S; Inoue, S; Namekata, N | 1 |
Arakawa, Y; Guimard, D; Iwamoto, S; Nomura, M; Tanabe, K | 1 |
Chen, P; Fukui, T; Geng, MM; Jia, LX; Liu, YL; Motohisa, J; Yang, L; Zhang, L | 1 |
Franchi, S; Frigeri, P; Geddo, M; Guizzetti, G; Seravalli, L; Trevisi, G | 1 |
Lee, JY; McKay, H; Millunchick, JM; Noordhoek, MJ; Smereka, P | 1 |
Biasiol, G; Bocchi, C; Caroff, P; Fröberg, L; Nilsson, K; Roddaro, S; Rossi, F; Samuelson, L; Sorba, L; Wagner, JB; Wernersson, LE | 1 |
Capua, A; Eisenstein, G; Forchel, A; Mikhelashvili, V; O'Duill, S; Reithmaier, JP; Somers, A | 1 |
Franceschetti, A; Luo, JW; Zunger, A | 1 |
Barrios, PJ; Grant, P; Liu, JR; Lu, ZG; Pakulski, G; Poitras, D; Poole, PJ; Raymond, S; Roy-Guay, D | 1 |
Englund, D; Faraon, A; Toishi, M; Vucković, J | 1 |
Alén, B; Dotor, ML; Fuster, D; González, L; González, Y; Martínez, LJ; Postigo, PA; Prieto, I | 1 |
Beyer, J; Buyanova, IA; Chen, WM; Suraprapapich, S; Tu, CW | 1 |
Du, J; Gao, XP; Liang, D; Tang, H | 1 |
Franchi, S; Frigeri, P; Seravalli, L; Trevisi, G | 1 |
Erwin, SC; First, PN; Rutter, GM; Song, YJ; Stroscio, JA; Zhitenev, NB | 1 |
Cahill, DG; Koh, YK; Linke, H; Persson, AI; Samuelson, L | 1 |
Chiragh, FL; Lester, LF; Li, Y; Lin, CY; Xin, YC | 1 |
Li, F; Mi, Z | 1 |
Kakitsuka, T; Kitayama, K; Matsuo, S; Tomofuji, S | 1 |
Borg, BM; Dey, AW; Egard, M; Johansson, AC; Johansson, S; Lind, E; Persson, KM; Thelander, C; Wernersson, LE | 1 |
Petta, JR; Schroer, MD | 1 |
Dündar, MA; Karouta, F; Nötzel, R; Ryckebosch, EC; van der Heijden, RW; van Ijzendoorn, LJ | 1 |
Bur, JA; Chang, CC; Huang, D; Kim, YS; Krishna, S; Lin, SY; Sharma, YD; Shenoi, RV | 1 |
Borgström, MT; Caroff, P; Dick, KA; Fröberg, LE; Nilsson, HA; Samuelson, L; Thelander, C | 1 |
Brongersma, SH; Crego-Calama, M; Offermans, P | 1 |
Arakawa, Y; Bordel, D; Guimard, D; Iwamoto, S; Tanabe, K | 1 |
Barea, LA; Camposeo, A; Del Carro, P; Frateschi, NC; Mialichi, JR; Persano, L; Pisignano, D | 1 |
Beltram, F; Ercolani, D; Grillo, V; Heun, S; Kulkarni, GU; Radha, B; Rossi, F; Salviati, G; Sorba, L | 1 |
Brown, SW; Kehoe, M; Lin, M; Lykke, KR; Moon, T; Smith, C; Swanson, R | 1 |
Cataluna, MA; Fedorova, KA; Krestnikov, I; Livshits, D; Rafailov, EU | 1 |
Claudon, J; Gérard, JM; Gregersen, N; Mørk, J; Nielsen, TR | 1 |
Adams, DC; Chow, WW; Davids, P; Lyon, S; Passmore, BS; Ribaudo, T; Shaner, EA; Wasserman, D | 1 |
Chen, X; Jian, Y; Wu, E; Wu, G; Zeng, H | 1 |
Banin, U; Chen, G; Harats, MG; Rapaport, R; Schwarz, I; Zimran, A | 1 |
Berthing, T; Bonde, S; Martinez, KL; Nygård, J; Sørensen, CB; Utko, P | 1 |
Beltram, F; Blumin, M; Heun, S; Nair, SV; Paradiso, N; Roddaro, S; Ruda, HE; Salfi, J; Savelyev, IG | 1 |
Coleman, JJ; Dias, NL; Garg, A; Mirin, RP; Silverman, KL; Stevens, MJ; Verma, VB | 1 |
Dorogan, VG; Li, S; Mazur, YI; Salamo, GJ; Wang, ZM; Wu, J | 1 |
Ivanisevic, A; Jewett, S; Zemlyanov, D | 1 |
Assaid, E; Bailach, JB; Dujardin, F; Feddi, E; Martínez-Pastor, J; Oukerroum, A | 1 |
Baer, S; Choi, T; Dröscher, S; Ensslin, K; Güttinger, J; Ihn, T; Molitor, F; Müller, T; Roulleau, P | 1 |
Arciprete, F; Balzarotti, A; Fanfoni, M; Patella, F; Placidi, E; Zallo, E | 1 |
Bauer, G; Bechstedt, F; Caroff, P; Dick, KA; Ercolani, D; Keplinger, M; Kriegner, D; Mandl, B; Panse, C; Persson, JM; Sorba, L; Stangl, J | 1 |
Beltram, F; Ercolani, D; Pescaglini, A; Roddaro, S; Sorba, L | 1 |
Kulbachinskii, VA; Shchurova, LY | 1 |
Kim, H; Morris, CM; Petroff, PM; Pryor, C; Sherwin, MS; Stehr, D; Truong, TA | 1 |
Caroff, P; Dey, AW; Dick, KA; Plissard, S; Thelander, C | 1 |
Little, JW; Mitin, V; Reinhardt, K; Sablon, KA; Sergeev, A; Vagidov, N | 1 |
Liu, J; Liu, W; Qin, L; Tang, Q; Wu, RH; Yuan, X; Zhang, D; Zhang, H; Zhang, Y; Zhao, Y | 1 |
Baumgart, C; Facsko, S; Helm, M; Kanjilal, A; Liedke, MO; Mücklich, A; Prucnal, S; Rebohle, L; Reuther, H; Schmidt, H; Shalimov, A; Skorupa, W; Zuk, J | 1 |
Hu, H; Kim, KH; Li, X; Ning, CZ; Rogers, JA; Shin, JC; Yin, L; Yu, KJ; Zuo, JM | 1 |
Bechtel, HA; Chueh, YL; Fang, H; Gao, Q; Guo, J; Javey, A; Kapadia, R; Kim, HS; Krishna, S; Kumar, SB; Liu, CH; Madsen, M; Plis, E; Takei, K | 1 |
Gao, XP; Liang, D; Lin, PA; Reeves, S; Sankaran, RM | 1 |
Ford, AC; Guo, J; Javey, A; Kapadia, R; Kumar, SB | 1 |
Chiu, YJ; Wu, JP; Wu, TH | 1 |
Capua, A; Eisenstein, G; Karni, O; Reithmaier, JP; Saal, A; Yvind, K | 1 |
Dubrovskii, VG; Ercolani, D; Lugani, L; Sibirev, NV; Sorba, L; Timofeeva, MA | 1 |
Fukui, T; Hong, YJ; Lee, WH; Ruoff, RS; Wu, Y | 1 |
Čukarić, N; Partoens, B; Peeters, FM; Ravi Kishore, VV; Tadić, M | 1 |
Beyer, J; Buyanova, IA; Chen, WM; Suraprapapich, S; Tu, CW; Wang, PH | 1 |
Capua, A; Eisenstein, G; Karni, O; Reithmaier, JP; Yvind, K | 1 |
Ahn, KJ; Choi, JH; Han, WS; Kim, JH; Kim, SH; Lee, CM; Sim, SB; Yee, KJ | 1 |
Barrios, PJ; Haffouz, S; Lu, Z; Normandin, R; Poitras, D | 1 |
Alén, B; Canet-Ferrer, J; Dotor, ML; Fuster, D; González, L; González, Y; Martínez, LJ; Martínez-Pastor, JP; Muñoz-Matutano, G; Postigo, PA; Prieto, I | 1 |
Bente, EA; Du, L; Heck, MJ; Nötzel, R; Smit, MK; Tahvili, MS | 1 |
De Giorgi, M; Klimeck, G; O'Reilly, EP; Passaseo, A; Tasco, V; Todaro, MT; Usman, M | 1 |
Gao, XP; Liang, D | 1 |
Bhandari, NK; Cahay, M; Charles, J; Chetry, KB; Das, PP; Herbert, ST; Newrock, RS; Wan, J | 1 |
David, JP; Liu, H; Ng, JS; Sandall, I; Tan, CH; Wang, T | 1 |
Hsu, WC; Lee, CP; Ling, HS; Wang, SY | 1 |
Ahn, B; Dapkus, PD; Lin, YT; Nutt, SR; O'Brien, JD; Sarkissian, R; Stewart, LS; Yeh, TW | 1 |
Gotoh, H; Sogawa, T; Tateno, K; Zhang, G | 1 |
Abstreiter, G; Becker, J; Bichler, M; Finley, JJ; Hertenberger, S; Koblmüller, G; Rudolph, D | 1 |
Bolinsson, J; Borg, BM; Dick, KA; Johansson, J | 1 |
Cerutti, L; Gassenq, A; Hattasan, N; Rodriguez, JB; Roelkens, G; Tournié, E | 1 |
Chang-Hasnain, C; Chen, R; Ko, WS; Lu, F; Ng, KW; Tran, TT | 1 |
Ivanisevic, A; Jewett, SA | 1 |
Brown, A; Cho, E; Kuech, TF | 1 |
Beltram, F; Ercolani, D; Pitanti, A; Roddaro, S; Romeo, L; Sorba, L | 1 |
Berthing, T; Bonde, S; Madsen, MH; Martinez, KL; Nygård, J; Rostgaard, KR; Sørensen, CB | 1 |
Fang, M; Han, N; Ho, JC; Hou, JJ; Hung, TF; Lin, H; Wang, F; Xiu, F; Yip, S | 1 |
Cao, Y; Gu, Y; Ji, H; Ma, W; Xu, P; Yang, T | 1 |
Gao, Q; Guo, Y; Jagadish, C; Liao, Z; Tan, HH; Wang, Y; Xu, H; Zou, J | 1 |
Coldren, LA; Norberg, E; Parker, JS; Sivananthan, A | 1 |
Edamura, T; Fujita, K; Furuta, S; Klimeck, G; Kubis, T; Tanaka, K; Yamanishi, M | 1 |
Jiang, Q; Lee, A; Liu, H; Seeds, A; Tang, M | 1 |
Liu, CP; Liu, H; Natrella, M; Renaud, CC; Rouvalis, E; Seeds, AJ | 1 |
Cavallo, F; Deneke, C; Huang, M; Lagally, MG; Malachias, A; Merces, L; Rastelli, A; Schmidt, OG | 1 |
Buyanova, IA; Chen, WM; Geelhaar, L; Ptak, AJ; Puttisong, Y; Riechert, H; Tu, CW | 1 |
Alivisatos, AP; Beberwyck, BJ | 1 |
Bawendi, MG; Harris, DK | 1 |
Chuang, S; Ford, AC; Gao, Q; Guo, J; Javey, A; Kapadia, R | 1 |
Lee, JS; Liu, W; Talapin, DV | 1 |
Isakov, I; Panfilova, M; Sourribes, MJ; Warburton, PA | 1 |
Chiu, CH; Chou, CL; Chou, WC; Jian, HT; Kuo, HC; Lin, JY; Shen, JL; Shu, GW; Wang, SC; Wu, CH | 1 |
Anttu, N; Borg, BM; Svensson, J; Vainorius, N; Wernersson, LE | 1 |
He, JF; He, Y; He, YM; Li, MF; Lu, CY; Ni, HQ; Niu, ZC; Shang, XJ; Wang, GW; Wang, J; Wang, LJ; Wei, YJ; Yu, Y; Zha, GW | 1 |
Akiyama, H; Chen, S; Ito, T; Mochizuki, T; Yokoyama, H; Yoshita, M | 1 |
Ker, PJ; Ng, JS; Sandall, IC; Tan, CH; Xie, S | 1 |
Docherty, CJ; Gao, Q; Herz, LM; Jagadish, C; Johnston, MB; Joyce, HJ; Lloyd-Hughes, J; Tan, HH | 1 |
Dietz, RJ; Helm, M; Künzel, H; Mittendorff, M; Sartorius, B; Schneider, H; Winnerl, S; Xu, M | 1 |
Bechtel, HA; Fang, H; Javey, A; Krishna, S; Martin, MC; Plis, E; Yablonovitch, E | 1 |
Gougousi, T; Ye, L | 1 |
Campbell, J; Itzler, MA; Jiang, X; Lu, Z; Sun, W; Zhou, Q | 1 |
Bracker, AS; Brereton, PG; Carter, SG; Gammon, D; Kim, CS; Kim, M; Park, D; Sweeney, TM; Vora, PM; Yakes, MK; Yang, L | 1 |
Berthing, T; Frederiksen, RS; Holm, J; Liu, YC; Madsen, MH; Martinez, KL; Nygård, J; Rostgaard, KR | 1 |
Andersen, TK; Anselme, K; Badique, F; Berthing, T; Bonde, S; Buch-Månson, N; Guo, L; Li, X; Madsen, MH; Martinez, KL; Nygård, J | 1 |
Fukui, T; Hong, YJ; Kim, KS; Lee, WH; Ruoff, RS; Yang, JW | 1 |
Fukui, T; Tomioka, K; Yoshimura, M | 1 |
Dey, AW; Ek, M; Lind, E; Svensson, J; Thelander, C; Wernersson, LE | 1 |
Huang, JY; Mao, SX; Wang, J; Zhang, Z; Zheng, H | 1 |
Abstreiter, G; Amann, MC; Bichler, M; Bormann, M; Döblinger, M; Finley, JJ; Koblmüller, G; Matich, S; Mayer, B; Morkötter, S; Saller, K; Schmeiduch, H; Treu, J; Wiecha, P | 1 |
Dai, Y; Forbes, D; Guo, W; Huang, Y; Hubbard, SM; Kim, TW; Kuech, TF; Mawst, LJ; Nealey, PF; Nesnidal, M; Wang, Z; Xiong, S | 1 |
Chen, S; Jiang, Q; Liu, H; Seeds, A; Tang, M; Wu, J | 1 |
Alarcon-Llado, E; Fontcuberta I Morral, A; Frederiksen, RS; Krogstrup, P; Madsen, MH; Martinez, KL; Nygård, J; Rostgaard, KR; Vosch, T | 1 |
Chen, G; Chevallier, R; Haddadi, A; Hoang, AM; Razeghi, M | 1 |
Grützmacher, D; Lepsa, MI; Mussler, G; Rieger, T; Rosenbach, D; Schäpers, T | 1 |
Battle, PR; Fedorova, KA; Livshits, DA; Rafailov, EU; Sokolovskii, GS | 1 |
Abstreiter, G; Hertenberger, S; Koblmüller, G; Morkötter, S; Postorino, P; Yazji, S; Zardo, I | 1 |
Choi, I; Han, WS; Jo, B; Kim, J; Kim, JS; Lee, H; Leem, JY; Noh, SK; Oh, DK; Song, JH | 1 |
Alarcon Lladó, E; Amaduzzi, F; Fontcuberta i Morral, A; Friedl, M; Matteini, F; McIntyre, PC; Potts, H; Tang, K; Tütüncüoglu, G | 1 |
Alic, L; Bouvy, ND; Schols, RM; Stassen, LP; Wieringa, FP | 1 |
Bawendi, MG; Bruns, OT; Carr, JA; Chen, O; Franke, D; Harris, DK; Wilson, MWB | 1 |
Burke, AM; Carrad, DJ; Jagadish, C; Joyce, HJ; Krogstrup, P; Meredith, P; Micolich, AP; Mostert, AB; Nygård, J; Tan, HH; Ullah, AR | 1 |
Suslov, S; Yang, C; Zi, Y | 1 |
Field, JA; Gonzalez-Alvarez, A; Orenstein, E; Shadman, F; Sierra-Alvarez, R; Zeng, C | 1 |
Bawendi, MG; Bertram, SN; Caram, JR; Franke, D; Grein, ME; Murphy, RP; Spokoyny, B; Yoo, JJ | 1 |
Kim, HS; Kim, I; Ryu, H | 1 |
Field, JA; Nguyen, CH; Sierra-Alvarez, R | 1 |
Archetti, D; Neophytou, N | 1 |
Darwan, D; Lim, LJ; Tan, ZK; Wang, T; Wijaya, H | 1 |
Bahmani Jalali, H; De Trizio, L; Di Stasio, F; Manna, L | 1 |
3 review(s) available for arsenic and indium arsenide
Article | Year |
---|---|
Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide.
Topics: Aluminum Compounds; Animals; Arsenic Poisoning; Arsenicals; Female; Gallium; Humans; Indium; Lung Diseases; Male; Occupational Exposure; Semiconductors | 2004 |
Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.
Topics: Arsenicals; Indium; Surface Properties; Wettability | 2012 |
Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials.
Topics: Arsenicals; Indium; Quantum Dots | 2022 |
202 other study(ies) available for arsenic and indium arsenide
Article | Year |
---|---|
Metabolism of subcutaneous administered indium arsenide in the hamster.
Topics: Animals; Arsenic; Arsenicals; Cricetinae; Feces; Indium; Injections, Subcutaneous; Male; Tissue Distribution | 1992 |
Alterations in the heme biosynthetic pathway from the III-V semiconductor metal, indium arsenide (InAs).
Topics: Aminolevulinic Acid; Animals; Arsenic; Arsenicals; Cricetinae; Erythrocytes; Heme; Indium; Kidney; Liver; Male; Mesocricetus; Porphobilinogen Synthase; Porphyrins; Time Factors | 1995 |
Chronic toxicity of indium arsenide and indium phosphide to the lungs of hamsters.
Topics: Animals; Arsenic Poisoning; Arsenicals; Body Weight; Cricetinae; Indium; Lung; Male; Phosphines | 1996 |
Testicular toxicity of gallium arsenide, indium arsenide, and arsenic oxide in rats by repetitive intratracheal instillation.
Topics: Animals; Arsenic Poisoning; Arsenic Trioxide; Arsenicals; Gallium; Indium; Male; Organ Size; Oxides; Rats; Rats, Wistar; Sperm Count; Spermatozoa; Testis | 1996 |
Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters.
Topics: Animals; Arsenic; Arsenic Poisoning; Arsenicals; Body Weight; Cricetinae; Epididymis; Gallium; Indium; Intubation, Intratracheal; Male; Organ Size; Sperm Count; Spermatids; Testis | 1996 |
Comparative study of the toxic effects of gallium arsenide, indium arsenide and arsenic trioxide following intratracheal instillations to the lung of Syrian golden hamsters.
Topics: Animals; Arsenic Trioxide; Arsenicals; Body Weight; Cricetinae; Gallium; Indium; Instillation, Drug; Kidney Tubules; Lung; Male; Mesocricetus; Organ Size; Oxides; Trachea | 2000 |
In vitro toxicity of indium arsenide to alveolar macrophages evaluated by magnetometry, cytochemistry and morphological analysis.
Topics: Animals; Arsenicals; Cells, Cultured; Comet Assay; Cricetinae; Dose-Response Relationship, Drug; Electromagnetic Phenomena; In Situ Nick-End Labeling; Indium; L-Lactate Dehydrogenase; Macrophages, Alveolar; Male; Mesocricetus | 2002 |
Determination of the mean inner potential in III-V semiconductors by electron holography.
Topics: Algorithms; Arsenicals; Gallium; Holography; Indium; Microscopy, Electron; Neutron Diffraction; Phosphines; Semiconductors | 2003 |
Low-temperature scanning system for near- and far-field optical investigations.
Topics: Arsenicals; Cold Temperature; Gallium; Helium; Indium; Light; Microscopy, Confocal; Microscopy, Scanning Probe; Models, Structural; Spectrometry, Fluorescence; Spectrum Analysis | 2003 |
Pulmonary squamous cyst induced by exposure to indium arsenide in hamsters.
Topics: Animals; Arsenicals; Carcinogens; Carcinoma, Squamous Cell; Cricetinae; Indium; Japan; Lung Neoplasms; Male; Mesocricetus | 2003 |
Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED.
Topics: Arsenicals; Crystallization; Crystallography; Gallium; Indium; Microscopy, Electron; Semiconductors | 2004 |
Probing of individual semiconductor nanowhiskers by TEM-STM.
Topics: Arsenicals; Indium; Microscopy, Electron; Microscopy, Electron, Scanning Transmission; Nanotechnology; Semiconductors | 2004 |
Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.
Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Optics and Photonics; Particle Size; Quantum Dots; Semiconductors; Systems Integration | 2005 |
Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner.
Topics: Anisotropy; Arsenicals; Indium; Light; Magnetics; Manganese; Materials Testing; Nanotechnology; Nanotubes; Particle Size; Quantum Dots; Semiconductors; Spin Labels | 2005 |
Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
Topics: Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Microscopy, Electron, Transmission; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Semiconductors | 2005 |
Metabolomic and proteomic biomarkers for III-V semiconductors: chemical-specific porphyrinurias and proteinurias.
Topics: Animals; Arsenicals; Biomarkers; Cricetinae; Gallium; Indium; Kidney Tubules; Male; Mesocricetus; Porphyrins; Proteinuria; Proteomics; Semiconductors | 2005 |
Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses.
Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Glass; Indium; Luminescence; Luminescent Measurements; Materials Testing; Molecular Conformation; Nanotubes; Particle Size; Phase Transition; Photochemistry; Semiconductors; Silicon Dioxide | 2005 |
Engineering InAs(x)P(1-x)/InP/ZnSe III-V alloyed core/shell quantum dots for the near-infrared.
Topics: Alloys; Animals; Arsenicals; Indium; Phosphines; Quantum Dots; Rats; Selenium Compounds; Sentinel Lymph Node Biopsy; Spectroscopy, Near-Infrared; X-Ray Diffraction; Zinc Compounds | 2005 |
Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.
Topics: Arsenicals; Crystallization; Indium; Materials Testing; Molecular Conformation; Nanostructures; Phase Transition; Phosphines; Quantum Dots | 2005 |
Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
Topics: Arsenicals; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Indium; Microelectrodes; Nanotechnology; Nanotubes; Particle Size; Quantum Dots; Semiconductors | 2005 |
Three-dimensional nanoscale composition mapping of semiconductor nanowires.
Topics: Arsenicals; Catalysis; Gold; Indium; Microelectrodes; Nanotechnology; Nanotubes; Particle Size; Semiconductors; Sensitivity and Specificity; Surface Properties; Tomography | 2006 |
Infrared photodetectors in heterostructure nanowires.
Topics: Arsenicals; Gold; Indium; Light; Nanotubes; Particle Size; Phosphorus; Photochemistry; Quantum Dots; Sensitivity and Specificity; Silicon Dioxide; Spectrophotometry, Infrared; Surface Properties | 2006 |
Size series of small indium arsenide-zinc selenide core-shell nanocrystals and their application to in vivo imaging.
Topics: Animals; Arsenicals; Blood Proteins; Cadmium; Diagnostic Imaging; Fluorescent Dyes; Indium; Microscopy, Electron, Transmission; Nanostructures; Polyethylene Glycols; Protein Binding; Quantum Dots; Rats; Selenium Compounds; Semiconductors; Sentinel Lymph Node Biopsy; Spectrometry, Fluorescence; Spectroscopy, Near-Infrared; Thioctic Acid; Zinc Compounds | 2006 |
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
Topics: Arsenicals; Crystallization; Gallium; Indium; Light; Luminescent Measurements; Materials Testing; Molecular Conformation; Nanotubes; Optics and Photonics; Particle Size | 2006 |
Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.
Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Crystallization; Elasticity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Models, Chemical; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Stress, Mechanical | 2006 |
Au-free epitaxial growth of InAs nanowires.
Topics: Arsenicals; Crystallization; Electric Wiring; Gold; Indium; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size | 2006 |
Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.
Topics: Arsenicals; Computer Simulation; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Indium; Models, Chemical; Models, Molecular; Nanotechnology; Nanotubes; Transistors, Electronic | 2006 |
Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.
Topics: Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Nanotubes; Particle Size; Quantum Dots; Spectrum Analysis; Wettability | 2006 |
Level structure of InAs quantum dots in two-dimensional assemblies.
Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Electron Transport; Indium; Materials Testing; Models, Chemical; Quantum Dots; Semiconductors | 2006 |
Nanocrystalline TiO2 solar cells sensitized with InAs quantum dots.
Topics: Arsenicals; Crystallization; Indium; Nanostructures; Particle Size; Photochemistry; Quantum Dots; Semiconductors; Sensitivity and Specificity; Surface Properties; Titanium | 2006 |
Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
Topics: Arsenicals; Computer Simulation; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Microscopy, Electron, Scanning; Models, Chemical; Models, Molecular; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Surface Properties | 2006 |
High electron mobility InAs nanowire field-effect transistors.
Topics: Arsenicals; Crystallization; Electrochemistry; Electron Transport; Equipment Design; Equipment Failure Analysis; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Nanotubes; Particle Size; Surface Properties; Transistors, Electronic | 2007 |
Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxy.
Topics: Arsenicals; Crystallization; Indium; Macromolecular Substances; Materials Testing; Microfluidics; Molecular Conformation; Nanotechnology; Particle Size; Quantum Dots; Surface Properties | 2007 |
Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.
Topics: Arsenicals; Electromagnetic Fields; Gallium; Indium; Luminescence; Quantum Theory | 2007 |
Theoretical study on controllability of quantum state energy in an InGaAs/GaAs quantum dot buried in InGaAs.
Topics: Arsenicals; Computer Simulation; Dose-Response Relationship, Radiation; Gallium; Indium; Light; Linear Energy Transfer; Models, Chemical; Models, Molecular; Quantum Dots; Radiation Dosage; Semiconductors | 2006 |
Growth and characterization of InP nanowires with InAsP insertions.
Topics: Arsenicals; Crystallization; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Phosphines; Surface Properties | 2007 |
III-V nanowire growth mechanism: V/III ratio and temperature effects.
Topics: Arsenicals; Crystallization; Gold; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Surface Properties; Temperature | 2007 |
Morphology and composition of InAs/GaAs quantum dots.
Topics: Arsenicals; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanotechnology; Particle Size; Quantum Dots; Surface Properties | 2007 |
Shear stress measurements on InAs nanowires by AFM manipulation.
Topics: Arsenicals; Crystallization; Elasticity; Electric Wiring; Indium; Macromolecular Substances; Materials Testing; Micromanipulation; Microscopy, Atomic Force; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Shear Strength; Stress, Mechanical; Surface Properties | 2007 |
In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system.
Topics: Arsenicals; Crystallization; Heavy Ions; Indium; Materials Testing; Nanotechnology; Particle Size; Quantum Dots; Specimen Handling | 2007 |
Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
Topics: Arsenicals; Crystallization; Gallium; Indium; Microscopy, Atomic Force; Nanoparticles; Nanotechnology; Quantum Dots; Temperature | 2007 |
Scanned probe imaging of quantum dots inside InAs nanowires.
Topics: Arsenicals; Electron Transport; Indium; Materials Testing; Microscopy, Scanning Probe; Nanotechnology; Nanotubes; Particle Size; Quantum Dots | 2007 |
Strong extinction of a far-field laser beam by a single quantum dot.
Topics: Arsenicals; Gallium; Indium; Lasers; Materials Testing; Nanotechnology; Quantum Dots | 2007 |
Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
Topics: Arsenicals; Computer Simulation; Crystallization; Elasticity; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Phosphines; Stress, Mechanical; Surface Properties; X-Ray Diffraction | 2007 |
Excess indium and substrate effects on the growth of InAs nanowires.
Topics: Arsenicals; Indium; Microscopy, Electron, Scanning; Nanoparticles; Nanowires | 2007 |
InAs/InP radial nanowire heterostructures as high electron mobility devices.
Topics: Arsenicals; Computer Simulation; Crystallization; Electric Wiring; Electron Transport; Indium; Models, Chemical; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Phosphines | 2007 |
Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths.
Topics: Arsenicals; Computer Simulation; Gallium; Indium; Light; Materials Testing; Models, Theoretical; Quantum Dots; Telecommunications | 2007 |
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
Topics: Arsenicals; Computer Simulation; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanotechnology; Nanotubes; Particle Size; Surface Properties | 2007 |
Carrier multiplication in InAs nanocrystal quantum dots with an onset defined by the energy conservation limit.
Topics: Arsenicals; Catalysis; Colloids; Electrons; Indium; Metal Nanoparticles; Models, Theoretical; Nanoparticles; Nanostructures; Nanotechnology; Photochemistry; Quantum Dots; Semiconductors; Spectrophotometry; Time Factors | 2007 |
Self-aligned charge read-out for InAs nanowire quantum dots.
Topics: Arsenicals; Electric Wiring; Electrochemistry; Equipment Design; Equipment Failure Analysis; Indium; Lighting; Molecular Conformation; Nanotechnology; Nanotubes; Quantum Dots; Static Electricity | 2008 |
Direct observation of polarons in electron populated quantum dots by resonant Raman scattering.
Topics: Arsenicals; Electrons; Gallium; Indium; Quantum Dots; Semiconductors; Spectrum Analysis, Raman | 2008 |
The theoretical investigation of all-optical polarization switching based on InGaAs(P) Bragg-spaced quantum wells.
Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Models, Theoretical; Optics and Photonics; Quantum Dots; Quantum Theory; Refractometry; Signal Processing, Computer-Assisted | 2008 |
Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Quantum Dots; Temperature | 2008 |
Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm.
Topics: Amplifiers, Electronic; Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Optics and Photonics; Phosphines; Quantum Theory | 2008 |
Electro-optic and electro-absorption characterization of InAs quantum dot waveguides.
Topics: Arsenicals; Electronics; Electrons; Equipment Design; Equipment Failure Analysis; Indium; Light; Optics and Photonics; Quantum Dots; Scattering, Radiation | 2008 |
Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Fiber Optic Technology; Gallium; Hydrogen; Indium; Lasers, Semiconductor; Quantum Dots; Silicon; Systems Integration | 2008 |
Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Photons; Quality Control; Quantum Dots; Temperature | 2008 |
1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.
Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Models, Theoretical; Quantum Dots; Quantum Theory; Refractometry; Signal Processing, Computer-Assisted; Telecommunications | 2008 |
High-speed all-optical modulation using an InGaAs/AlAsSb quantum well waveguide.
Topics: Arsenicals; Computer Simulation; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Microwaves; Models, Theoretical; Optics and Photonics; Quantum Dots; Scattering, Radiation; Telecommunications | 2008 |
High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
Topics: Arsenic; Arsenicals; Crystallization; Electrochemistry; Equipment Design; Indium; Metal Nanoparticles; Microscopy, Electron, Transmission; Nanotechnology; Nanowires; Tin | 2008 |
Probe microscopy: Finding quantum dots inside nanowires.
Topics: Arsenicals; Electric Conductivity; Image Enhancement; Indium; Microscopy, Scanning Probe; Nanotechnology; Nanotubes; Quantum Dots | 2007 |
Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.
Topics: Arsenicals; Crystallization; Indium; Ions; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties | 2007 |
Synthetic scheme for high-quality InAs nanocrystals based on self-focusing and one-pot synthesis of InAs-based core-shell nanocrystals.
Topics: Arsenicals; Indium; Quantum Dots; Spectroscopy, Near-Infrared; Temperature | 2008 |
Transport coefficients of InAs nanowires as a function of diameter.
Topics: Arsenicals; Indium; Nanotechnology; Nanowires; Particle Size | 2009 |
Friction measurements of InAs nanowires on silicon nitride by AFM manipulation.
Topics: Arsenicals; Friction; Indium; Materials Testing; Metal Nanoparticles; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanoparticles; Nanotechnology; Nanowires; Silicon Compounds; Surface Properties; Temperature | 2009 |
Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer.
Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Electronics; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Light; Models, Theoretical; Optical Devices; Scattering, Radiation; Transducers | 2008 |
Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.
Topics: Arsenicals; Computer Simulation; Crystallization; Indium; Luminescent Measurements; Magnetics; Models, Chemical; Nanostructures; Nanotechnology; Particle Size; Quantum Dots | 2009 |
Diameter-dependent electron mobility of InAs nanowires.
Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Electron Transport; Indium; Models, Chemical; Models, Molecular; Nanostructures; Nanotechnology; Particle Size | 2009 |
Evolution of epitaxial InAs nanowires on GaAs 111B.
Topics: Arsenicals; Gallium; Indium; Microscopy, Electron, Scanning; Nanowires | 2009 |
Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.
Topics: Arsenicals; Crystallization; Energy Transfer; Indium; Materials Testing; Microscopy, Atomic Force; Models, Chemical; Nanostructures; Nanotechnology; Photochemistry; Quantum Dots; Temperature; Wettability | 2008 |
The scaling of the effective band gaps in indium-arsenide quantum dots and wires.
Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Quantum Dots; Surface Properties | 2008 |
Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 microm using cavity-confined slow light.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Miniaturization; Phosphines; Photons; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Temperature | 2009 |
1.5 GHz single-photon detection at telecommunication wavelengths using sinusoidally gated InGaAs/InP avalanche photodiode.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Microwaves; Phosphines; Photometry; Photons; Reproducibility of Results; Semiconductors; Sensitivity and Specificity; Telecommunications | 2009 |
Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Nanotechnology; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity; Silicon; Temperature | 2009 |
Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure.
Topics: Arsenicals; Gallium; Indium; Light; Luminescent Measurements; Nanotechnology; Nanotubes; Photons; Refractometry; Scattering, Radiation | 2009 |
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
Topics: Arsenicals; Gallium; Indium; Luminescence; Nanostructures; Photochemical Processes; Quantum Dots; Spectrum Analysis; Wettability | 2009 |
Filling of hole arrays with InAs quantum dots.
Topics: Arsenicals; Gallium; Indium; Monte Carlo Method; Nanotechnology; Quantum Dots | 2009 |
Growth of vertical InAs nanowires on heterostructured substrates.
Topics: Arsenicals; Gallium; Indium; Microscopy, Atomic Force; Microscopy, Electron, Transmission; Nanowires | 2009 |
Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier.
Topics: Amplifiers, Electronic; Arsenicals; Computer Communication Networks; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Microwaves; Optical Devices; Phosphines; Semiconductors; Signal Processing, Computer-Assisted | 2008 |
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchange.
Topics: Arsenicals; Electrons; Indium; Quantum Dots; Semiconductors; Silicon | 2009 |
An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.
Topics: Arsenicals; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Light; Microwaves; Models, Theoretical; Phosphines; Quantum Dots; Scattering, Radiation; Semiconductors | 2009 |
High-brightness single photon source from a quantum dot in a directional-emission nanocavity.
Topics: Algorithms; Arsenicals; Equipment Design; Fiber Optic Technology; Gallium; Indium; Lasers; Luminescence; Microscopy, Electron, Scanning; Models, Statistical; Normal Distribution; Optics and Photonics; Photons; Poisson Distribution; Quantum Dots; Temperature | 2009 |
Room temperature continuous wave operation in a photonic crystal microcavity laser with a single layer of InAs/InP self-assembled quantum wires.
Topics: Arsenicals; Crystallization; Equipment Design; Indium; Lasers; Microscopy, Atomic Force; Microscopy, Electron, Scanning; Nanostructures; Optics and Photonics; Phosphines; Photons; Quantum Dots; Quantum Theory; Surface Properties; Temperature | 2009 |
Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy.
Topics: Arsenicals; Indium; Microscopy, Atomic Force; Nanotechnology; Quantum Dots; Spectrum Analysis | 2009 |
InAs nanowire transistors as gas sensor and the response mechanism.
Topics: Arsenicals; Crystallization; Electric Conductivity; Electrochemistry; Equipment Design; Equipment Failure Analysis; Gases; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties; Transducers; Transistors, Electronic | 2009 |
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
Topics: Arsenicals; Gallium; Indium; Quantum Dots | 2009 |
Making Mn substitutional impurities in InAs using a scanning tunneling microscope.
Topics: Arsenicals; Crystallization; Indium; Macromolecular Substances; Manganese; Materials Testing; Micromanipulation; Microscopy, Scanning Tunneling; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties | 2009 |
Thermal conductance of InAs nanowire composites.
Topics: Arsenicals; Crystallization; Indium; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Polymethyl Methacrylate; Surface Properties; Temperature; Thermal Conductivity | 2009 |
Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Phosphines; Refractometry; Reproducibility of Results; Sensitivity and Specificity | 2009 |
Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Miniaturization; Quantum Dots; Reproducibility of Results; Sensitivity and Specificity | 2009 |
Dynamic switching characteristics of InGaAsP/InP multimode interference optical waveguide switch.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Optical Devices; Phosphines; Refractometry; Signal Processing, Computer-Assisted | 2009 |
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Materials Testing; Microwaves; Nanostructures; Nanotechnology; Particle Size; Transistors, Electronic | 2010 |
Correlating the nanostructure and electronic properties of InAs nanowires.
Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties; Transistors, Electronic | 2010 |
Sensitivities of InGaAsP photonic crystal membrane nanocavities to hole refractive index.
Topics: Arsenicals; Crystallization; Gallium; Indium; Luminescent Measurements; Membranes, Artificial; Nanostructures; Phosphorus Compounds; Photons; Refractometry | 2010 |
A surface plasmon enhanced infrared photodetector based on InAs quantum dots.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Infrared Rays; Light; Nanotechnology; Photometry; Quantum Dots; Surface Plasmon Resonance | 2010 |
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
Topics: Arsenicals; Carbon; Chemistry, Organic; Crystallization; Electrochemistry; Indium; Materials Testing; Metal Nanoparticles; Metals; Nanotechnology; Nanowires; Organic Chemicals; Temperature | 2010 |
Gas detection with vertical InAs nanowire arrays.
Topics: Arsenicals; Gases; Indium; Nanotechnology; Nanowires; Nitrogen Dioxide; Sensitivity and Specificity | 2010 |
Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Solid-State; Quantum Dots; Silicon | 2010 |
Hybrid planar microresonators with organic and InGaAs active media.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Light; Lighting; Miniaturization; Optical Devices; Organic Chemicals; Transducers | 2010 |
Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires.
Topics: Arsenicals; Catalysis; Indium; Microscopy, Electron, Scanning; Microscopy, Electron, Transmission; Nanotechnology; Nanowires; Palladium; Temperature | 2010 |
Stray light characterization of an InGaAs anamorphic hyperspectral imager.
Topics: Arsenicals; Equipment Design; Gallium; Image Enhancement; Indium; Light; Microscopy, Fluorescence; Optics and Photonics | 2010 |
Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Gallium; Indium; Lasers, Semiconductor; Light; Optics and Photonics; Quantum Dots; Semiconductors | 2010 |
Designs for high-efficiency electrically pumped photonic nanowire single-photon sources.
Topics: Arsenicals; Computer Simulation; Gallium; Indium; Lasers; Metals; Nanoparticles; Nanotechnology; Nanowires; Optics and Photonics; Particle Size; Photons; Polymers; Quantum Dots; Refractometry; Surface Properties | 2010 |
Observation of Rabi splitting from surface plasmon coupled conduction state transitions in electrically excited InAs quantum dots.
Topics: Arsenicals; Electric Conductivity; Electromagnetic Fields; Equipment Design; Equipment Failure Analysis; Indium; Light; Luminescent Measurements; Quantum Dots; Scattering, Radiation; Surface Plasmon Resonance | 2011 |
Time-dependent photon number discrimination of InGaAs/InP avalanche photodiode single-photon detector.
Topics: Arsenicals; Equipment Design; Gallium; Indium; Phosphines; Photometry; Photons; Semiconductors | 2011 |
Enhancement of two photon processes in quantum dots embedded in subwavelength metallic gratings.
Topics: Arsenicals; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Indium; Lighting; Microscopy, Fluorescence, Multiphoton; Quantum Dots; Refractometry | 2011 |
Intact mammalian cell function on semiconductor nanowire arrays: new perspectives for cell-based biosensing.
Topics: Animals; Arsenicals; Biosensing Techniques; Ganglia, Spinal; Humans; Indium; Microscopy, Confocal; Nanowires; Neurons; Rats; Semiconductors; Structure-Activity Relationship | 2011 |
Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signals.
Topics: Arsenicals; Electromagnetic Fields; Indium; Materials Testing; Nanostructures; Particle Size; Semiconductors; Signal Processing, Computer-Assisted | 2011 |
Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Photons; Quantum Dots | 2011 |
Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Infrared Rays; Lighting; Materials Testing; Particle Size; Quantum Dots; Refractometry | 2011 |
Characterization of peptide adsorption on InAs using X-ray photoelectron spectroscopy.
Topics: Adsorption; Arsenicals; Indium; Microscopy, Atomic Force; Peptides; Photoelectron Spectroscopy; Surface Properties | 2011 |
On the anomalous Stark effect in a thin disc-shaped quantum dot.
Topics: Arsenicals; Electromagnetic Fields; Indium; Models, Chemical; Nanostructures; Particle Size; Quantum Dots; Quantum Theory | 2010 |
Coherent electron-phonon coupling in tailored quantum systems.
Topics: Acoustics; Arsenicals; Electrons; Graphite; Indium; Mathematical Computing; Nanostructures; Nanotechnology; Nanowires; Particle Size; Quantum Dots; Temperature | 2011 |
Comparative study of low temperature growth of InAs and InMnAs quantum dots.
Topics: Arsenic; Arsenicals; Cold Temperature; Diffusion; Indium; Kinetics; Manganese; Microscopy, Atomic Force; Nanotechnology; Quantum Dots | 2011 |
Unit cell structure of crystal polytypes in InAs and InSb nanowires.
Topics: Antimony; Arsenicals; Computer Simulation; Indium; Models, Chemical; Models, Molecular; Nanostructures; Particle Size | 2011 |
Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots.
Topics: Arsenicals; Electromagnetic Fields; Electrons; Indium; Materials Testing; Nanostructures; Particle Size; Phosphines; Quantum Dots | 2011 |
Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs.
Topics: Arsenicals; Computer Simulation; Energy Transfer; Gallium; Indium; Magnetics; Models, Chemical; Quantum Dots; Semiconductors | 2011 |
Terahertz ionization of highly charged quantum posts in a perforated electron gas.
Topics: Absorption; Arsenicals; Computer Simulation; Electrons; Gases; Indium; Models, Chemical; Quantum Dots; Semiconductors; Static Electricity; Terahertz Radiation | 2012 |
Effects of crystal phase mixing on the electrical properties of InAs nanowires.
Topics: Arsenicals; Electrons; Indium; Nanowires; Particle Size; Surface Properties | 2011 |
Strong enhancement of solar cell efficiency due to quantum dots with built-in charge.
Topics: Arsenicals; Electric Power Supplies; Gallium; Indium; Quantum Dots; Solar Energy; Surface Properties | 2011 |
InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Phosphines; Photometry; Semiconductors | 2011 |
n-InAs nanopyramids fully integrated into silicon.
Topics: Arsenicals; Indium; Nanostructures; Nanotechnology; Particle Size; Silicon; Silicon Dioxide; Surface Properties | 2011 |
In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics.
Topics: Arsenicals; Electromagnetic Fields; Gallium; Indium; Light; Materials Testing; Nanostructures; Particle Size; Silicon | 2011 |
Quantum confinement effects in nanoscale-thickness InAs membranes.
Topics: Arsenicals; Electron Transport; Indium; Materials Testing; Membranes, Artificial; Nanostructures; Particle Size | 2011 |
Shape-controlled Au particles for InAs nanowire growth.
Topics: Arsenicals; Crystallization; Gold; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Surface Properties | 2012 |
Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires.
Topics: Arsenicals; Computer Simulation; Electric Conductivity; Indium; Models, Chemical; Nanostructures; Particle Size; Semiconductors | 2012 |
Field-driven all-optical wavelength converter using novel InGaAsP/InAlGaAs quantum wells.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Optical Devices; Phosphines; Quantum Dots; Signal Processing, Computer-Assisted; Telecommunications | 2011 |
Complex characterization of short-pulse propagation through InAs/InP quantum-dash optical amplifiers: from the quasi-linear to the two-photon-dominated regime.
Topics: Amplifiers, Electronic; Arsenicals; Computer Simulation; Indium; Light; Models, Chemical; Phosphines; Photons; Quantum Dots; Scattering, Radiation | 2012 |
Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.
Topics: Arsenicals; Computer Simulation; Crystallization; Gold; Indium; Macromolecular Substances; Materials Testing; Models, Chemical; Models, Molecular; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties | 2012 |
van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene.
Topics: Anisotropy; Arsenicals; Crystallization; Graphite; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Static Electricity; Surface Properties | 2012 |
Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.
Topics: Arsenicals; Electrons; Gallium; Indium; Models, Chemical; Nanostructures; Nanotechnology; Nanowires; Semiconductors | 2012 |
Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures.
Topics: Anisotropy; Arsenicals; Computer Simulation; Electron Spin Resonance Spectroscopy; Gallium; Indium; Magnetic Fields; Quantum Dots; Spin Labels | 2012 |
Extreme nonlinearities in InAs/InP nanowire gain media: the two-photon induced laser.
Topics: Amplifiers, Electronic; Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Materials Testing; Nanotubes; Nonlinear Dynamics; Oscillometry; Phosphines; Photons | 2012 |
Enhanced in and out-coupling of InGaAs slab waveguides by periodic metal slit arrays.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Refractometry; Surface Plasmon Resonance | 2012 |
Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.
Topics: Arsenicals; Indium; Light; Luminescent Measurements; Quantum Dots | 2012 |
Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Miniaturization; Nanoparticles; Phosphines; Surface Plasmon Resonance | 2012 |
Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Indium; Lasers; Phosphines; Quantum Dots | 2012 |
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.
Topics: Arsenicals; Computer Simulation; Crystallization; Electric Conductivity; Indium; Materials Testing; Models, Chemical; Molecular Conformation; Particle Size; Quantum Dots | 2012 |
Strong tuning of Rashba spin-orbit interaction in single InAs nanowires.
Topics: Arsenicals; Computer Simulation; Indium; Models, Chemical; Nanostructures; Spin Labels | 2012 |
Influence of surface scattering on the anomalous conductance plateaus in an asymmetrically biased InAs/In(0.52)Al(0.48)As quantum point contact.
Topics: Arsenicals; Computer Simulation; Electric Conductivity; Electromagnetic Fields; Indium; Models, Chemical; Nanostructures; Particle Size; Quantum Theory; Scattering, Radiation | 2012 |
1300 nm wavelength InAs quantum dot photodetector grown on silicon.
Topics: Absorption; Arsenicals; Germanium; Indium; Materials Testing; Microscopy, Electron, Transmission; Nanotechnology; Optics and Photonics; Photochemistry; Quantum Dots; Quantum Theory; Silicon; Surface Properties | 2012 |
Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing.
Topics: Aluminum; Arsenicals; Gallium; Indium; Infrared Rays; Light; Microscopy, Atomic Force; Nanotechnology; Optics and Photonics; Photochemistry; Quantum Dots; Temperature | 2012 |
InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.
Topics: Arsenicals; Crystallization; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotubes; Particle Size; Quantum Dots; Surface Properties | 2012 |
VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.
Topics: Arsenicals; Crystallization; Indium; Materials Testing; Nanotubes; Particle Size; Phosphines; Quantum Dots | 2012 |
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability.
Topics: Arsenicals; Catalysis; Crystallization; Hot Temperature; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Surface Properties; Titanium | 2012 |
Controlling the abruptness of axial heterojunctions in III-V nanowires: beyond the reservoir effect.
Topics: Arsenicals; Electrodes; Gallium; Indium; Materials Testing; Semiconductors; Surface Properties | 2012 |
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Infrared Rays; Light; Photometry; Refractometry; Scattering, Radiation; Semiconductors; Silicon; Surface Plasmon Resonance; Systems Integration | 2012 |
Nanolasers grown on silicon-based MOSFETs.
Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Nanotechnology; Silicon; Transistors, Electronic | 2012 |
Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure.
Topics: Arsenicals; Base Sequence; DNA Probes; DNA, Single-Stranded; Indium; Oxides; Photoelectron Spectroscopy; Surface Properties; X-Ray Absorption Spectroscopy | 2012 |
Electrostatic spin control in InAs/InP nanowire quantum dots.
Topics: Arsenicals; Crystallization; Electroplating; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Particle Size; Phosphines; Quantum Dots; Surface Properties | 2012 |
Cell membrane conformation at vertical nanowire array interface revealed by fluorescence imaging.
Topics: Arsenicals; Cell Membrane; HEK293 Cells; Humans; Indium; Microscopy, Confocal; Nanowires; Optical Imaging; Polyethyleneimine; Silanes; Tissue Array Analysis | 2012 |
Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.
Topics: Arsenicals; Crystallization; Electric Conductivity; Gallium; Indium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Refractometry; Surface Properties | 2012 |
High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.
Topics: Arsenicals; Gallium; Indium; Lasers; Quantum Dots; Temperature | 2012 |
Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.
Topics: Arsenicals; Catalysis; Indium; Materials Testing; Metals; Microscopy, Electron, Scanning; Nanowires; Palladium; Particle Size; Semiconductors; Surface Properties; Temperature; Zinc | 2012 |
Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.
Topics: Arsenicals; Gallium; Indium; Ions; Materials Testing; Phosphines | 2012 |
Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy.
Topics: Aluminum; Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Solid-State; Phase Transition; Plasma Gases | 2012 |
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
Topics: Arsenicals; Crystallization; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers, Semiconductor; Materials Testing; Quantum Dots; Silicon | 2012 |
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Topics: Arsenicals; Crystallization; Equipment Design; Equipment Failure Analysis; Gallium; Heavy Ions; Indium; Materials Testing; Phosphines; Photometry; Semiconductors | 2012 |
Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates.
Topics: Arsenicals; Computer Simulation; Elastic Modulus; Indium; Materials Testing; Membranes, Artificial; Models, Chemical; Models, Molecular; Nanostructures; Silicon; Tensile Strength | 2012 |
Room-temperature electron spin amplifier based on Ga(In)NAs alloys.
Topics: Alloys; Amplifiers, Electronic; Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Materials Testing; Semiconductors; Spin Labels; Temperature | 2013 |
Ion exchange synthesis of III-V nanocrystals.
Topics: Arsenicals; Cadmium; Gallium; Indium; Ions; Nanoparticles; Phosphorus | 2012 |
Improved precursor chemistry for the synthesis of III-V quantum dots.
Topics: Arsenicals; Indium; Magnetic Resonance Spectroscopy; Quantum Dots | 2012 |
Ballistic InAs nanowire transistors.
Topics: Arsenicals; Indium; Nanowires; Temperature; Transistors, Electronic | 2013 |
III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar photoresponse.
Topics: Arsenicals; Chalcogens; Electrons; Indium; Ligands; Nanoparticles; Phosphines; Photochemical Processes | 2013 |
Minimization of the contact resistance between InAs nanowires and metallic contacts.
Topics: Arsenicals; Electric Conductivity; Electrodes; Heavy Ions; Indium; Materials Testing; Metal Nanoparticles; Surface Properties | 2013 |
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.
Topics: Arsenicals; Electric Power Supplies; Equipment Design; Gallium; Indium; Materials Testing; Pancreatitis-Associated Proteins; Refractometry; Solar Energy; Sunlight; Surface Plasmon Resonance | 2013 |
Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors.
Topics: Arsenicals; Indium; Light; Nanowires; Particle Size; Photochemistry; Silicon; Surface Properties | 2013 |
Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
Topics: Arsenicals; Equipment Design; Gallium; Indium; Nanostructures; Nanotechnology; Nanowires; Quantum Dots; Silicon | 2013 |
Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Quantum Theory | 2013 |
Temperature dependence of impact ionization in InAs.
Topics: Arsenicals; Computer Simulation; Electromagnetic Fields; Indium; Ions; Models, Chemical; Semiconductors; Temperature | 2013 |
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
Topics: Arsenicals; Electric Conductivity; Gallium; Indium; Materials Testing; Nanowires; Particle Size; Phosphines; Radiation Dosage; Semiconductors; Terahertz Radiation; Terahertz Spectroscopy | 2013 |
Large area photoconductive terahertz emitter for 1.55 μm excitation based on an InGaAs heterostructure.
Topics: Arsenicals; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Lighting; Materials Testing; Nanoparticles; Nanotechnology; Surface Properties; Terahertz Radiation | 2013 |
Quantum of optical absorption in two-dimensional semiconductors.
Topics: Absorption; Arsenicals; Indium; Light; Models, Chemical; Nanostructures; Quantum Theory; Semiconductors; Spectroscopy, Fourier Transform Infrared | 2013 |
Indium diffusion and native oxide removal during the atomic layer deposition (ALD) of TiO2 films on InAs(100) surfaces.
Topics: Arsenicals; Diffusion; Indium; Microscopy, Atomic Force; Organic Chemicals; Photoelectron Spectroscopy; Surface Properties; Titanium; Water | 2013 |
Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes.
Topics: Arsenicals; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lasers; Phosphines; Photometry; Refractometry; Semiconductors | 2013 |
Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.
Topics: Anisotropy; Arsenicals; Crystallization; Gallium; Indium; Nanotechnology; Particle Size; Quantum Dots | 2013 |
Vertical nanowire arrays as a versatile platform for protein detection and analysis.
Topics: Animals; Arsenicals; Biotin; Cattle; Fluorescent Dyes; Immobilized Proteins; Immunoassay; Indium; Maleimides; Nanowires; Nickel; Nitrilotriacetic Acid; Protein Array Analysis; Proteins; Serum Albumin; Streptavidin | 2013 |
Tuning InAs nanowire density for HEK293 cell viability, adhesion, and morphology: perspectives for nanowire-based biosensors.
Topics: Arsenicals; Biosensing Techniques; Cell Adhesion; Cell Survival; HEK293 Cells; Humans; Indium; Nanowires; Surface Properties | 2013 |
Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.
Topics: Arsenicals; Crystallization; Graphite; Indium; Nanostructures; Nanowires; Particle Size; Static Electricity | 2013 |
Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique.
Topics: Arsenicals; Indium; Nanotechnology; Nanowires; Silicon; Surface Properties; Zinc | 2013 |
Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.
Topics: Arsenicals; Electrons; Graphite; Indium; Nanostructures; Nanowires; Semiconductors; Silicon; Transistors, Electronic | 2013 |
Dynamic process of phase transition from wurtzite to zinc blende structure in InAs nanowires.
Topics: Arsenicals; Indium; Nanowires; Phase Transition; Semiconductors; Surface Properties; Zinc | 2013 |
Enhanced luminescence properties of InAs-InAsP core-shell nanowires.
Topics: Arsenicals; Indium; Luminescence; Nanoshells; Nanostructures; Nanowires; Silicon; Surface Properties | 2013 |
InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.
Topics: Arsenicals; Crystallization; Gallium; Indium; Methacrylates; Microscopy, Electron, Transmission; Nanowires; Polymers; Polystyrenes | 2013 |
InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.
Topics: Arsenicals; Equipment Design; Gallium; Indium; Light; Nanotechnology; Quantum Dots | 2014 |
Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures.
Topics: Arsenicals; Biosensing Techniques; Fluorescence; Indium; Light; Nanowires | 2015 |
Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application.
Topics: Antimony; Arsenicals; Humans; Indium; Infrared Rays; Optical Imaging; Optical Phenomena; Temperature; Veins | 2015 |
Simultaneous integration of different nanowires on single textured Si (100) substrates.
Topics: Adsorption; Arsenicals; Crystallization; Gallium; Indium; Materials Testing; Nanocomposites; Nanowires; Particle Size; Silicon; Surface Properties; Systems Integration | 2015 |
574-647 nm wavelength tuning by second-harmonic generation from diode-pumped PPKTP waveguides.
Topics: Arsenicals; Gallium; Indium; Lasers, Semiconductor; Phosphates; Quantum Dots; Titanium | 2015 |
Pressure dependence of Raman spectrum in InAs nanowires.
Topics: Arsenicals; Crystallization; Indium; Models, Chemical; Nanowires; Phase Transition; Phonons; Pressure; Spectrum Analysis, Raman; Surface Properties | 2014 |
Lasing characteristics of InP-based InAs quantum dots depending on InGaAsP waveguide conditions.
Topics: Arsenicals; Indium; Quantum Dots | 2014 |
From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.
Topics: Arsenicals; Catalysis; Electrons; Indium; Nanostructures; Nanotechnology; Nanowires; Semiconductors; Surface Properties | 2016 |
Towards automated spectroscopic tissue classification in thyroid and parathyroid surgery.
Topics: Adipose Tissue; Adolescent; Adult; Aged; Arsenicals; Automation; Calibration; Electronic Data Processing; Equipment Design; Female; Gallium; Humans; Indium; Male; Middle Aged; Parathyroid Glands; Regression Analysis; Silicon; Spectrophotometry; Spectrum Analysis; Thyroid Gland; Young Adult | 2017 |
Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared.
Topics: Animals; Arsenicals; Brain; Indium; Infrared Rays; Metal Nanoparticles; Mice; Optical Imaging; Quantum Dots | 2016 |
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry.
Topics: Arsenicals; Electric Conductivity; Electronics; Electrons; Equipment and Supplies; Gallium; Indium; Nanowires; Particle Size; Polyethylene Glycols; Protons; Semiconductors | 2017 |
Understanding Self-Catalyzed Epitaxial Growth of III-V Nanowires toward Controlled Synthesis.
Topics: Antimony; Arsenicals; Catalysis; Gallium; Indium; Nanowires; Particle Size; Semiconductors; Surface Properties | 2017 |
Ecotoxicity assessment of ionic As(III), As(V), In(III) and Ga(III) species potentially released from novel III-V semiconductor materials.
Topics: Aliivibrio fischeri; Animals; Arsenates; Arsenicals; Arsenites; Biological Assay; Daphnia; Ecotoxicology; Gallium; Indium; Ions; Semiconductors; Toxicity Tests, Acute | 2017 |
Single Nanocrystal Spectroscopy of Shortwave Infrared Emitters.
Topics: Arsenicals; Cadmium Compounds; Indium; Infrared Rays; Nanoparticles; Selenium Compounds; Spectrophotometry, Infrared | 2019 |
Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances.
Topics: Arsenicals; Density Functional Theory; Electric Conductivity; Indium; Nanowires; Particle Size; Phosphorus; Surface Properties | 2019 |
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles.
Topics: Aliivibrio fischeri; Arsenicals; Gallium; Indium; Methane; Nanoparticles; Particle Size; Semiconductors; Sewage; Surface Properties; Water Pollutants, Chemical; Water Purification | 2020 |
Thermoelectric Properties of InA Nanowires from Full-Band Atomistic Simulations.
Topics: Arsenicals; Calibration; Computer Simulation; Electric Conductivity; Electronics; Indium; Nanowires; Phonons; Thermal Conductivity | 2020 |
Ultra-Confined Visible-Light-Emitting Colloidal Indium Arsenide Quantum Dots.
Topics: Arsenicals; Indium; Luminescence; Quantum Dots | 2021 |