aluminum nitride has been researched along with gallium in 18 studies
| Timeframe | Studies, this research(%) | All Research% |
|---|---|---|
| pre-1990 | 0 (0.00) | 18.7374 |
| 1990's | 0 (0.00) | 18.2507 |
| 2000's | 8 (44.44) | 29.6817 |
| 2010's | 10 (55.56) | 24.3611 |
| 2020's | 0 (0.00) | 2.80 |
| Authors | Studies |
|---|---|
| Kawazoe, T; Kuroda, T; Morkoç, H; Neogi, A; Ohtsu, M; Tackeuchi, A | 1 |
| Dupuis, RD; Li, P; Ryou, JH; Song, J; Summers, CJ; Wang, X; Wang, ZL | 1 |
| Blom, DA; Gradecak, S; Li, Y; Lieber, CM; Qian, F; Wu, Y; Xiang, J; Yan, H | 1 |
| Cherns, PD; Costa, PM; Holec, D; Humphreys, CJ | 1 |
| Bougerol, C; Daudin, B; Gayral, B; Renard, J; Songmuang, R | 1 |
| Chen, LC; Hong, LS; Huang, JB; Wang, CK | 1 |
| Bhattacharyya, A; Li, Y; Moustakas, TD; Paiella, R; Thomidis, C | 1 |
| Chiu, CS; Gwo, S; Lee, HM | 1 |
| Cumtornkittikul, C; Hassanet, S; Iizuka, N; Managaki, N; Nakano, Y; Shimizu, T; Sugiyama, M; Yoshida, H | 1 |
| He, C; Hu, Z; Song, J; Wang, X; Wang, Z; Zhang, F | 1 |
| Carnevale, SD; Mills, MJ; Myers, RC; Phillips, PJ; Yang, J | 1 |
| Brewster, M; Cao, Y; Gradečak, S; Greene, C; Johnson, JW; Laboutin, O; Li, Y; Lim, SK; Ling, Y; Qian, F | 1 |
| Julien, FH; Kotsar, Y; Lupu, A; Monroy, E; Tchernycheva, M | 1 |
| Duan, Y; Qin, L; Shi, H; Shi, L; Tang, G | 1 |
| Bahir, G; Gross, E; Monroy, E; Nevet, A; Orenstein, M; Pesach, A; Schacham, SE; Segev, M | 1 |
| Chen, X; Hu, W; Lu, W; Wang, L; Wang, S; Yu, A | 1 |
| Chen, KJ; Chiu, CH; Kuo, HC; Kuo, YK; Lan, YP; Lee, PT; Lin, BC; Lin, CC; Shih, MH; Wang, CH | 1 |
| Diener, M; Eickhoff, M; Müntze, GM; Pouokam, E; Röth, K; Sasse, A; Schäfer, W; Steidle, J | 1 |
18 other study(ies) available for aluminum nitride and gallium
| Article | Year |
|---|---|
Exciton localization in vertically and laterally coupled GaN/AlN quantum dots.
Topics: Aluminum Compounds; Anisotropy; Crystallization; Dose-Response Relationship, Radiation; Gallium; Light; Materials Testing; Nanotechnology; Photochemistry; Quantum Dots; Radiation Dosage | 2005 |
Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.
Topics: Aluminum Compounds; Biocompatible Materials; Biosensing Techniques; Gallium; Microscopy, Electron, Scanning; Nanostructures; Zinc Oxide | 2005 |
Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Topics: Aluminum Compounds; Electrons; Gallium; Macromolecular Substances; Microscopy, Electron, Transmission; Nanostructures; Transistors, Electronic | 2006 |
Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: a theoretical study using the Wien2k and Telnes programs.
Topics: Aluminum Compounds; Electrons; Gallium; Microscopy, Electron, Transmission; Nanostructures | 2008 |
Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.
Topics: Aluminum Compounds; Gallium; Luminescence; Microscopy, Electron, Transmission; Nanowires; Quantum Dots; Spectrum Analysis | 2008 |
A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode.
Topics: Aluminum Compounds; Aluminum Oxide; Crystallization; Electrodes; Equipment Design; Equipment Failure Analysis; Gallium; Lighting; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Porosity; Surface Properties | 2009 |
Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides.
Topics: Aluminum Compounds; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Lasers, Semiconductor; Refractometry; Reproducibility of Results; Sensitivity and Specificity; Signal Processing, Computer-Assisted | 2007 |
Site-selective biofunctionalization of aluminum nitride surfaces using patterned organosilane self-assembled monolayers.
Topics: Adsorption; Aluminum Compounds; Antibodies; Binding Sites; Colloids; Gallium; Gold; Green Fluorescent Proteins; Membranes, Artificial; Metal Nanoparticles; Particle Size; Protein Array Analysis; Silanes; Spectrometry, Fluorescence; Surface Properties | 2010 |
Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion.
Topics: Aluminum Compounds; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Gallium; Refractometry; Semiconductors; Signal Processing, Computer-Assisted; Silicon Compounds | 2009 |
Electricity generation based on one-dimensional group-III nitride nanomaterials.
Topics: Aluminum Compounds; Electricity; Gallium; Indium; Nanostructures; Semiconductors; X-Ray Diffraction | 2010 |
Three-dimensional GaN/AlN nanowire heterostructures by separating nucleation and growth processes.
Topics: Aluminum Compounds; Crystallization; Gallium; Macromolecular Substances; Materials Testing; Molecular Conformation; Nanostructures; Nanotechnology; Particle Size; Surface Properties | 2011 |
Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties.
Topics: Aluminum Compounds; Crystallization; Electron Transport; Gallium; Macromolecular Substances; Materials Testing; Metal Nanoparticles; Molecular Conformation; Nanotechnology; Particle Size; Refractometry; Surface Properties | 2012 |
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells.
Topics: Absorption; Aluminum Compounds; Electrons; Equipment Design; Equipment Failure Analysis; Gallium; Light; Quantum Theory; Refractometry; Scattering, Radiation; Surface Plasmon Resonance | 2012 |
Hybrid density functional theory studies of AlN and GaN under uniaxial strain.
Topics: Aluminum Compounds; Computer Simulation; Gallium; Graphite; Materials Testing; Models, Statistical; Molecular Conformation; Physics; Semiconductors; Software; Stress, Mechanical; Tensile Strength | 2013 |
Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.
Topics: Algorithms; Aluminum Compounds; Computer Simulation; Gallium; Models, Theoretical; Quantum Theory; Refractometry | 2013 |
The absorption tunability and enhanced electromagnetic coupling of terahertz-plasmons in grating-gate AlN/GaN plasmonic device.
Topics: Absorption; Aluminum Compounds; Computer-Aided Design; Electromagnetic Fields; Equipment Design; Equipment Failure Analysis; Gallium; Surface Plasmon Resonance; Terahertz Radiation | 2013 |
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
Topics: Aluminum Compounds; Electron Transport; Equipment Design; Equipment Failure Analysis; Gallium; Indium; Lighting; Materials Testing; Semiconductors | 2014 |
In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors.
Topics: Acetylcholinesterase; Aluminum Compounds; Animals; Biosensing Techniques; Cells, Cultured; Computer-Aided Design; Conductometry; Enzyme Activation; Enzymes, Immobilized; Equipment Design; Equipment Failure Analysis; Gallium; Monitoring, Physiologic; Myenteric Plexus; Neurons; Rats; Rats, Wistar; Reproducibility of Results; Sensitivity and Specificity; Transistors, Electronic | 2016 |